TY - JOUR
T1 - Performance enhancement with thin p-AlInN electron-blocking layer in ultraviolet light-emitting diodes
AU - Usman, Muhammad
AU - Jamil, Tariq
AU - Aamir, Muhammad
AU - Alyemeni, Abdullrahman Abdullah
N1 - Funding Information:
The authors would like to thank Ghulam Ishaq Khan Institute of Engineering Sciences and Technology (Pakistan) for lending technical support for this work. The authors are also thankful to Deanship of Scientific Research, Vice Presidency for Graduate Studies and Scientific Research, King Faisal University, Saudi Arabia for supporting this research work through their Grant (Grant No. 2460). The authors declare no conflicts of interest.
Publisher Copyright:
© 2023 Society of Photo-Optical Instrumentation Engineers (SPIE).
PY - 2023/1/1
Y1 - 2023/1/1
N2 - III-nitride ultraviolet light-emitting diodes (UV LEDs) face low carrier confinement and poor p-doping. In this study, we propose a thin AlInN electron-blocking layer (EBL) in UV LEDs instead of conventional AlGaN EBL. Numerical results demonstrate that UV LED with thin AlInN enhances the optoelectronic performance. The results also reveal that AlGaN EBL is more sensitive to p-doping as compared to AlInN EBL. Thin AlInN layer facilitates hole transportation through intra-band tunneling. Moreover, AlInN has a high conduction band offset that suppresses the electron leakage effectively. Hence, the carrier radiative recombination rate considerably enhances with thin AlInN EBL. The efficiency droop in the proposed LED is also alleviated.
AB - III-nitride ultraviolet light-emitting diodes (UV LEDs) face low carrier confinement and poor p-doping. In this study, we propose a thin AlInN electron-blocking layer (EBL) in UV LEDs instead of conventional AlGaN EBL. Numerical results demonstrate that UV LED with thin AlInN enhances the optoelectronic performance. The results also reveal that AlGaN EBL is more sensitive to p-doping as compared to AlInN EBL. Thin AlInN layer facilitates hole transportation through intra-band tunneling. Moreover, AlInN has a high conduction band offset that suppresses the electron leakage effectively. Hence, the carrier radiative recombination rate considerably enhances with thin AlInN EBL. The efficiency droop in the proposed LED is also alleviated.
KW - AlInN electron blocking layer
KW - efficiency
KW - p-doping
KW - ultraviolet light-emitting diodes
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U2 - 10.1117/1.OE.62.1.017106
DO - 10.1117/1.OE.62.1.017106
M3 - Article
AN - SCOPUS:85147546874
SN - 0091-3286
VL - 62
JO - Optical Engineering
JF - Optical Engineering
IS - 1
M1 - 017106
ER -