Path to achieve sub-10-nm half-pitch using electron beam lithography

A. K G Tavakkoli, S. N. Piramanayagam, M. Ranjbar, R. Sbiaa, T. C. Chong

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Achieving dense patterns with good resolution is a key step for several applications in micro- and nanoelectronics. Based on the mechanical strength and capillary forces between nanometer scale features, the authors have proposed that the use of thin resist is a solution to achieve dense array of patterns. Therefore, the authors have studied the effect of resist thickness on the resolution of dense patterns for both lines and dots. Based on the experimental results using hydrogen silsesquioxane resist, dense patterns with sub-10-nm half-pitch were achieved. The authors also propose a new method for calculating contrast for nanostructures.

Original languageEnglish
Pages (from-to)110351-110357
Number of pages7
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume29
Issue number1
DOIs
Publication statusPublished - 2011

Fingerprint

Nanoelectronics
Electron beam lithography
Microelectronics
Strength of materials
Hydrogen
Nanostructures
lithography
electron beams
microelectronics
hydrogen

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Path to achieve sub-10-nm half-pitch using electron beam lithography. / Tavakkoli, A. K G; Piramanayagam, S. N.; Ranjbar, M.; Sbiaa, R.; Chong, T. C.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 29, No. 1, 2011, p. 110351-110357.

Research output: Contribution to journalArticle

Tavakkoli, A. K G ; Piramanayagam, S. N. ; Ranjbar, M. ; Sbiaa, R. ; Chong, T. C. / Path to achieve sub-10-nm half-pitch using electron beam lithography. In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2011 ; Vol. 29, No. 1. pp. 110351-110357.
@article{e4a520c2e9bb403585841a4e65eeee30,
title = "Path to achieve sub-10-nm half-pitch using electron beam lithography",
abstract = "Achieving dense patterns with good resolution is a key step for several applications in micro- and nanoelectronics. Based on the mechanical strength and capillary forces between nanometer scale features, the authors have proposed that the use of thin resist is a solution to achieve dense array of patterns. Therefore, the authors have studied the effect of resist thickness on the resolution of dense patterns for both lines and dots. Based on the experimental results using hydrogen silsesquioxane resist, dense patterns with sub-10-nm half-pitch were achieved. The authors also propose a new method for calculating contrast for nanostructures.",
author = "Tavakkoli, {A. K G} and Piramanayagam, {S. N.} and M. Ranjbar and R. Sbiaa and Chong, {T. C.}",
year = "2011",
doi = "10.1116/1.3532938",
language = "English",
volume = "29",
pages = "110351--110357",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "1",

}

TY - JOUR

T1 - Path to achieve sub-10-nm half-pitch using electron beam lithography

AU - Tavakkoli, A. K G

AU - Piramanayagam, S. N.

AU - Ranjbar, M.

AU - Sbiaa, R.

AU - Chong, T. C.

PY - 2011

Y1 - 2011

N2 - Achieving dense patterns with good resolution is a key step for several applications in micro- and nanoelectronics. Based on the mechanical strength and capillary forces between nanometer scale features, the authors have proposed that the use of thin resist is a solution to achieve dense array of patterns. Therefore, the authors have studied the effect of resist thickness on the resolution of dense patterns for both lines and dots. Based on the experimental results using hydrogen silsesquioxane resist, dense patterns with sub-10-nm half-pitch were achieved. The authors also propose a new method for calculating contrast for nanostructures.

AB - Achieving dense patterns with good resolution is a key step for several applications in micro- and nanoelectronics. Based on the mechanical strength and capillary forces between nanometer scale features, the authors have proposed that the use of thin resist is a solution to achieve dense array of patterns. Therefore, the authors have studied the effect of resist thickness on the resolution of dense patterns for both lines and dots. Based on the experimental results using hydrogen silsesquioxane resist, dense patterns with sub-10-nm half-pitch were achieved. The authors also propose a new method for calculating contrast for nanostructures.

UR - http://www.scopus.com/inward/record.url?scp=79551618576&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79551618576&partnerID=8YFLogxK

U2 - 10.1116/1.3532938

DO - 10.1116/1.3532938

M3 - Article

VL - 29

SP - 110351

EP - 110357

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 1

ER -