Optimized carrier confinement in deep-ultraviolet light-emitting diodes with AlInGaN/AlInN superlattice electron blocking layer

Tariq Jamil, Muhammad Usman*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The optoelectronic characteristics of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with AlInGaN/AlInN superlattices electron blocking layer (EBL) are numerically investigated. The results show that DUV LED with AlInGaN/AlInN EBL has superior carrier confinement capability over the DUV LED with conventional AlGaN EBL. Hence, the internal quantum efficiency (IQE) and radiative recombination rate of the proposed LED is increased by 49% and 219%, respectively as compared to conventional LED. This is assigned to the optimal recombination of electron-hole pairs in the active zone of the proposed LED. Interestingly, the proposed LED also exhibits near-droop-free efficiency.

Original languageEnglish
Article number115638
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume278
DOIs
Publication statusPublished - Apr 2022
Externally publishedYes

Keywords

  • AlInGaN
  • DUV LEDs
  • Internal quantum efficiency
  • Superlattice EBL

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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