Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes

Patrick G. McCafferty, Azzouz Sellai, Paul Dawson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Surface plasmons polaritons (SPPs) may be supported on the surface of PtSi electrodes in PtSi/Si Schottky barrier diodes. Using a prism-air gap-PtSi/p-Si or Otto coupling configuration we have excited SPPs at temperatures below 120 K on these devices. Changes in the dip in reflectance associated with SP excitation indicates changes in the PtSi optical data as a function of temperature. However it is important to understand what the optical data describe. In general they incorporate a surface roughness layer and are not truly characteristic of the material (PtSi) itself. In this context AFM analysis of the surface topography is presented. In addition the compositional structure of the PtSi as determined from Rutherford Backscattering Spectroscopy is discussed.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsRandolph E. Longshore
Pages55-63
Number of pages9
Volume2274
Publication statusPublished - 1994
EventInfrared Detectors: State of the Art II - San Diego, CA, USA
Duration: Jul 24 1994Jul 25 1994

Other

OtherInfrared Detectors: State of the Art II
CitySan Diego, CA, USA
Period7/24/947/25/94

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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    McCafferty, P. G., Sellai, A., & Dawson, P. (1994). Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes. In R. E. Longshore (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2274, pp. 55-63)