Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes

Patrick G. McCafferty, Azzouz Sellai, Paul Dawson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Surface plasmons polaritons (SPPs) may be supported on the surface of PtSi electrodes in PtSi/Si Schottky barrier diodes. Using a prism-air gap-PtSi/p-Si or Otto coupling configuration we have excited SPPs at temperatures below 120 K on these devices. Changes in the dip in reflectance associated with SP excitation indicates changes in the PtSi optical data as a function of temperature. However it is important to understand what the optical data describe. In general they incorporate a surface roughness layer and are not truly characteristic of the material (PtSi) itself. In this context AFM analysis of the surface topography is presented. In addition the compositional structure of the PtSi as determined from Rutherford Backscattering Spectroscopy is discussed.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsRandolph E. Longshore
Pages55-63
Number of pages9
Volume2274
Publication statusPublished - 1994
EventInfrared Detectors: State of the Art II - San Diego, CA, USA
Duration: Jul 24 1994Jul 25 1994

Other

OtherInfrared Detectors: State of the Art II
CitySan Diego, CA, USA
Period7/24/947/25/94

Fingerprint

Schottky diodes
Diodes
Plasmons
plasmons
polaritons
Schottky barrier diodes
Rutherford backscattering spectroscopy
Surface topography
Prisms
Surface roughness
prisms
backscattering
Temperature
topography
surface roughness
Electrodes
atomic force microscopy
Air
reflectance
temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

McCafferty, P. G., Sellai, A., & Dawson, P. (1994). Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes. In R. E. Longshore (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2274, pp. 55-63)

Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes. / McCafferty, Patrick G.; Sellai, Azzouz; Dawson, Paul.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Randolph E. Longshore. Vol. 2274 1994. p. 55-63.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

McCafferty, PG, Sellai, A & Dawson, P 1994, Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes. in RE Longshore (ed.), Proceedings of SPIE - The International Society for Optical Engineering. vol. 2274, pp. 55-63, Infrared Detectors: State of the Art II, San Diego, CA, USA, 7/24/94.
McCafferty PG, Sellai A, Dawson P. Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes. In Longshore RE, editor, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2274. 1994. p. 55-63
McCafferty, Patrick G. ; Sellai, Azzouz ; Dawson, Paul. / Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes. Proceedings of SPIE - The International Society for Optical Engineering. editor / Randolph E. Longshore. Vol. 2274 1994. pp. 55-63
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