Abstract
Surface plasmons polaritons (SPPs) may be supported on the surface of PtSi electrodes in PtSi/Si Schottky barrier diodes. Using a prism-air gap-PtSi/p-Si or Otto coupling configuration we have excited SPPs at temperatures below 120 K on these devices. Changes in the dip in reflectance associated with SP excitation indicates changes in the PtSi optical data as a function of temperature. However it is important to understand what the optical data describe. In general they incorporate a surface roughness layer and are not truly characteristic of the material (PtSi) itself. In this context AFM analysis of the surface topography is presented. In addition the compositional structure of the PtSi as determined from Rutherford Backscattering Spectroscopy is discussed.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Editors | Randolph E. Longshore |
| Pages | 55-63 |
| Number of pages | 9 |
| Volume | 2274 |
| Publication status | Published - 1994 |
| Event | Infrared Detectors: State of the Art II - San Diego, CA, USA Duration: Jul 24 1994 → Jul 25 1994 |
Other
| Other | Infrared Detectors: State of the Art II |
|---|---|
| City | San Diego, CA, USA |
| Period | 7/24/94 → 7/25/94 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes. / McCafferty, Patrick G.; Sellai, Azzouz; Dawson, Paul.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Randolph E. Longshore. Vol. 2274 1994. p. 55-63.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes
AU - McCafferty, Patrick G.
AU - Sellai, Azzouz
AU - Dawson, Paul
PY - 1994
Y1 - 1994
N2 - Surface plasmons polaritons (SPPs) may be supported on the surface of PtSi electrodes in PtSi/Si Schottky barrier diodes. Using a prism-air gap-PtSi/p-Si or Otto coupling configuration we have excited SPPs at temperatures below 120 K on these devices. Changes in the dip in reflectance associated with SP excitation indicates changes in the PtSi optical data as a function of temperature. However it is important to understand what the optical data describe. In general they incorporate a surface roughness layer and are not truly characteristic of the material (PtSi) itself. In this context AFM analysis of the surface topography is presented. In addition the compositional structure of the PtSi as determined from Rutherford Backscattering Spectroscopy is discussed.
AB - Surface plasmons polaritons (SPPs) may be supported on the surface of PtSi electrodes in PtSi/Si Schottky barrier diodes. Using a prism-air gap-PtSi/p-Si or Otto coupling configuration we have excited SPPs at temperatures below 120 K on these devices. Changes in the dip in reflectance associated with SP excitation indicates changes in the PtSi optical data as a function of temperature. However it is important to understand what the optical data describe. In general they incorporate a surface roughness layer and are not truly characteristic of the material (PtSi) itself. In this context AFM analysis of the surface topography is presented. In addition the compositional structure of the PtSi as determined from Rutherford Backscattering Spectroscopy is discussed.
UR - http://www.scopus.com/inward/record.url?scp=0028758174&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0028758174&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0028758174
SN - 0819415987
SN - 9780819415981
VL - 2274
SP - 55
EP - 63
BT - Proceedings of SPIE - The International Society for Optical Engineering
A2 - Longshore, Randolph E.
ER -