Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes

Patrick G. McCafferty; Azzouz Sellai; Paul Dawson

Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes

Patrick G. McCafferty, Azzouz Sellai, Paul Dawson

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

Surface plasmons polaritons (SPPs) may be supported on the surface of PtSi electrodes in PtSi/Si Schottky barrier diodes. Using a prism-air gap-PtSi/p-Si or Otto coupling configuration we have excited SPPs at temperatures below 120 K on these devices. Changes in the dip in reflectance associated with SP excitation indicates changes in the PtSi optical data as a function of temperature. However it is important to understand what the optical data describe. In general they incorporate a surface roughness layer and are not truly characteristic of the material (PtSi) itself. In this context AFM analysis of the surface topography is presented. In addition the compositional structure of the PtSi as determined from Rutherford Backscattering Spectroscopy is discussed.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Randolph E. Longshore
Pages	55-63
Number of pages	9
Volume	2274
Publication status	Published - 1994
Event	Infrared Detectors: State of the Art II - San Diego, CA, USA Duration: Jul 24 1994 → Jul 25 1994

Other

Other	Infrared Detectors: State of the Art II
City	San Diego, CA, USA
Period	7/24/94 → 7/25/94

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

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McCafferty, P. G., Sellai, A., & Dawson, P. (1994). Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes. In R. E. Longshore (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2274, pp. 55-63)

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title = "Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes",

abstract = "Surface plasmons polaritons (SPPs) may be supported on the surface of PtSi electrodes in PtSi/Si Schottky barrier diodes. Using a prism-air gap-PtSi/p-Si or Otto coupling configuration we have excited SPPs at temperatures below 120 K on these devices. Changes in the dip in reflectance associated with SP excitation indicates changes in the PtSi optical data as a function of temperature. However it is important to understand what the optical data describe. In general they incorporate a surface roughness layer and are not truly characteristic of the material (PtSi) itself. In this context AFM analysis of the surface topography is presented. In addition the compositional structure of the PtSi as determined from Rutherford Backscattering Spectroscopy is discussed.",

author = "McCafferty, {Patrick G.} and Azzouz Sellai and Paul Dawson",

year = "1994",

language = "English",

isbn = "0819415987",

volume = "2274",

pages = "55--63",

editor = "Longshore, {Randolph E.}",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Infrared Detectors: State of the Art II ; Conference date: 24-07-1994 Through 25-07-1994",

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T1 - Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes

AU - McCafferty, Patrick G.

AU - Sellai, Azzouz

AU - Dawson, Paul

PY - 1994

Y1 - 1994

N2 - Surface plasmons polaritons (SPPs) may be supported on the surface of PtSi electrodes in PtSi/Si Schottky barrier diodes. Using a prism-air gap-PtSi/p-Si or Otto coupling configuration we have excited SPPs at temperatures below 120 K on these devices. Changes in the dip in reflectance associated with SP excitation indicates changes in the PtSi optical data as a function of temperature. However it is important to understand what the optical data describe. In general they incorporate a surface roughness layer and are not truly characteristic of the material (PtSi) itself. In this context AFM analysis of the surface topography is presented. In addition the compositional structure of the PtSi as determined from Rutherford Backscattering Spectroscopy is discussed.

AB - Surface plasmons polaritons (SPPs) may be supported on the surface of PtSi electrodes in PtSi/Si Schottky barrier diodes. Using a prism-air gap-PtSi/p-Si or Otto coupling configuration we have excited SPPs at temperatures below 120 K on these devices. Changes in the dip in reflectance associated with SP excitation indicates changes in the PtSi optical data as a function of temperature. However it is important to understand what the optical data describe. In general they incorporate a surface roughness layer and are not truly characteristic of the material (PtSi) itself. In this context AFM analysis of the surface topography is presented. In addition the compositional structure of the PtSi as determined from Rutherford Backscattering Spectroscopy is discussed.

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M3 - Conference contribution

AN - SCOPUS:0028758174

SN - 0819415987

SN - 9780819415981

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BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Longshore, Randolph E.

T2 - Infrared Detectors: State of the Art II

Y2 - 24 July 1994 through 25 July 1994

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