Abstract
Surface plasmons polaritons (SPPs) may be supported on the surface of PtSi electrodes in PtSi/Si Schottky barrier diodes. Using a prism-air gap-PtSi/p-Si or Otto coupling configuration we have excited SPPs at temperatures below 120 K on these devices. Changes in the dip in reflectance associated with SP excitation indicates changes in the PtSi optical data as a function of temperature. However it is important to understand what the optical data describe. In general they incorporate a surface roughness layer and are not truly characteristic of the material (PtSi) itself. In this context AFM analysis of the surface topography is presented. In addition the compositional structure of the PtSi as determined from Rutherford Backscattering Spectroscopy is discussed.
| Original language | English |
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| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Editors | Randolph E. Longshore |
| Pages | 55-63 |
| Number of pages | 9 |
| Volume | 2274 |
| Publication status | Published - 1994 |
| Event | Infrared Detectors: State of the Art II - San Diego, CA, USA Duration: Jul 24 1994 → Jul 25 1994 |
Other
| Other | Infrared Detectors: State of the Art II |
|---|---|
| City | San Diego, CA, USA |
| Period | 7/24/94 → 7/25/94 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics