On the plasmonic Schottky photovoltaic devices

Azzouz Sellai*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two aspects that have been overlooked in the published literature in relation to plasmonic Schottky junction photovoltaic devices are addressed in the present contribution. They concern the effect, on the overall efficiency, of an existing interfacial layer with optical properties different from those of the bulk and the spatial fluctuations in the potential barrier between the metal and the semiconductor.

Original languageEnglish
Title of host publication2019 Photonics North, PN 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728137384
DOIs
Publication statusPublished - May 1 2019
Event2019 Photonics North, PN 2019 - Quebec City, Canada
Duration: May 21 2019May 23 2019

Publication series

Name2019 Photonics North, PN 2019

Conference

Conference2019 Photonics North, PN 2019
CountryCanada
CityQuebec City
Period5/21/195/23/19

Keywords

  • Metal-semiconductor contacts
  • Schottky devices
  • Solar cells
  • Surface plasmons

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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