On the plasmonic Schottky photovoltaic devices

Azzouz Sellai

doi:10.1109/PN.2019.8819524

On the plasmonic Schottky photovoltaic devices

Azzouz Sellai^*

^*Corresponding author for this work

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Two aspects that have been overlooked in the published literature in relation to plasmonic Schottky junction photovoltaic devices are addressed in the present contribution. They concern the effect, on the overall efficiency, of an existing interfacial layer with optical properties different from those of the bulk and the spatial fluctuations in the potential barrier between the metal and the semiconductor.

Original language	English
Title of host publication	2019 Photonics North, PN 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728137384
DOIs	https://doi.org/10.1109/PN.2019.8819524
Publication status	Published - May 2019
Event	2019 Photonics North, PN 2019 - Quebec City, Canada Duration: May 21 2019 → May 23 2019

Publication series

Name	2019 Photonics North, PN 2019

Conference

Conference	2019 Photonics North, PN 2019
Country/Territory	Canada
City	Quebec City
Period	5/21/19 → 5/23/19

Keywords

Metal-semiconductor contacts
Schottky devices
Solar cells
Surface plasmons

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Atomic and Molecular Physics, and Optics

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PN.2019.8819524

Cite this

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title = "On the plasmonic Schottky photovoltaic devices",

abstract = "Two aspects that have been overlooked in the published literature in relation to plasmonic Schottky junction photovoltaic devices are addressed in the present contribution. They concern the effect, on the overall efficiency, of an existing interfacial layer with optical properties different from those of the bulk and the spatial fluctuations in the potential barrier between the metal and the semiconductor.",

keywords = "Metal-semiconductor contacts, Schottky devices, Solar cells, Surface plasmons",

author = "Azzouz Sellai",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Photonics North, PN 2019 ; Conference date: 21-05-2019 Through 23-05-2019",

year = "2019",

month = may,

doi = "10.1109/PN.2019.8819524",

language = "English",

series = "2019 Photonics North, PN 2019",

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AU - Sellai, Azzouz

PY - 2019/5

Y1 - 2019/5

N2 - Two aspects that have been overlooked in the published literature in relation to plasmonic Schottky junction photovoltaic devices are addressed in the present contribution. They concern the effect, on the overall efficiency, of an existing interfacial layer with optical properties different from those of the bulk and the spatial fluctuations in the potential barrier between the metal and the semiconductor.

AB - Two aspects that have been overlooked in the published literature in relation to plasmonic Schottky junction photovoltaic devices are addressed in the present contribution. They concern the effect, on the overall efficiency, of an existing interfacial layer with optical properties different from those of the bulk and the spatial fluctuations in the potential barrier between the metal and the semiconductor.

KW - Metal-semiconductor contacts

KW - Schottky devices

KW - Solar cells

KW - Surface plasmons

UR - http://www.scopus.com/inward/record.url?scp=85072758828&partnerID=8YFLogxK

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U2 - 10.1109/PN.2019.8819524

DO - 10.1109/PN.2019.8819524

M3 - Conference contribution

AN - SCOPUS:85072758828

T3 - 2019 Photonics North, PN 2019

BT - 2019 Photonics North, PN 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Photonics North, PN 2019

Y2 - 21 May 2019 through 23 May 2019

ER -

On the plasmonic Schottky photovoltaic devices

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

UN SDGs

Access to Document

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