Non-ohmic transport behavior in ultra-thin gold films

A. Alkhatib, T. Souier, M. Chiesa

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Structure and local lateral electrical properties of Au films of thicknesses ranging from 10 to 140 nm are studied using conductive atomic force microscopy. Comparison of current maps taken at different thicknesses reveals surprising highly resistive regions (1010-1011 Ω), the density of which increases strongly at lower thickness. The high resistivity is shown to be directly related to discontinuities in the metal sheet. Local I-V curves are acquired to show the nature of electrical behavior relative to thickness. Results show that in Au films of higher thickness the electrical behavior is ohmic, while it is non-ohmic in highly discontinuous films of lower thickness, with the transition happening between 34 and 39 nm. The non-ohmic behavior is explained with tunneling occurring between separated Au islands. The results explain the abrupt increase of electrical resistivity at lower thin film thicknesses.

Original languageEnglish
Pages (from-to)840-845
Number of pages6
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume176
Issue number11
DOIs
Publication statusPublished - Jun 25 2011

Fingerprint

Gold
gold
Sheet metal
Film thickness
Atomic force microscopy
Electric properties
Thin films
electrical resistivity
metal sheets
discontinuity
film thickness
electrical properties
atomic force microscopy
curves
thin films

Keywords

  • Conductive AFM
  • Direct tunneling
  • Electrical conductivity
  • Electrical transport
  • Field emission
  • Ultra-thin films

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Non-ohmic transport behavior in ultra-thin gold films. / Alkhatib, A.; Souier, T.; Chiesa, M.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 176, No. 11, 25.06.2011, p. 840-845.

Research output: Contribution to journalArticle

@article{7843e6e443784c65917bf2754c7f1202,
title = "Non-ohmic transport behavior in ultra-thin gold films",
abstract = "Structure and local lateral electrical properties of Au films of thicknesses ranging from 10 to 140 nm are studied using conductive atomic force microscopy. Comparison of current maps taken at different thicknesses reveals surprising highly resistive regions (1010-1011 Ω), the density of which increases strongly at lower thickness. The high resistivity is shown to be directly related to discontinuities in the metal sheet. Local I-V curves are acquired to show the nature of electrical behavior relative to thickness. Results show that in Au films of higher thickness the electrical behavior is ohmic, while it is non-ohmic in highly discontinuous films of lower thickness, with the transition happening between 34 and 39 nm. The non-ohmic behavior is explained with tunneling occurring between separated Au islands. The results explain the abrupt increase of electrical resistivity at lower thin film thicknesses.",
keywords = "Conductive AFM, Direct tunneling, Electrical conductivity, Electrical transport, Field emission, Ultra-thin films",
author = "A. Alkhatib and T. Souier and M. Chiesa",
year = "2011",
month = "6",
day = "25",
doi = "10.1016/j.mseb.2011.04.013",
language = "English",
volume = "176",
pages = "840--845",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "11",

}

TY - JOUR

T1 - Non-ohmic transport behavior in ultra-thin gold films

AU - Alkhatib, A.

AU - Souier, T.

AU - Chiesa, M.

PY - 2011/6/25

Y1 - 2011/6/25

N2 - Structure and local lateral electrical properties of Au films of thicknesses ranging from 10 to 140 nm are studied using conductive atomic force microscopy. Comparison of current maps taken at different thicknesses reveals surprising highly resistive regions (1010-1011 Ω), the density of which increases strongly at lower thickness. The high resistivity is shown to be directly related to discontinuities in the metal sheet. Local I-V curves are acquired to show the nature of electrical behavior relative to thickness. Results show that in Au films of higher thickness the electrical behavior is ohmic, while it is non-ohmic in highly discontinuous films of lower thickness, with the transition happening between 34 and 39 nm. The non-ohmic behavior is explained with tunneling occurring between separated Au islands. The results explain the abrupt increase of electrical resistivity at lower thin film thicknesses.

AB - Structure and local lateral electrical properties of Au films of thicknesses ranging from 10 to 140 nm are studied using conductive atomic force microscopy. Comparison of current maps taken at different thicknesses reveals surprising highly resistive regions (1010-1011 Ω), the density of which increases strongly at lower thickness. The high resistivity is shown to be directly related to discontinuities in the metal sheet. Local I-V curves are acquired to show the nature of electrical behavior relative to thickness. Results show that in Au films of higher thickness the electrical behavior is ohmic, while it is non-ohmic in highly discontinuous films of lower thickness, with the transition happening between 34 and 39 nm. The non-ohmic behavior is explained with tunneling occurring between separated Au islands. The results explain the abrupt increase of electrical resistivity at lower thin film thicknesses.

KW - Conductive AFM

KW - Direct tunneling

KW - Electrical conductivity

KW - Electrical transport

KW - Field emission

KW - Ultra-thin films

UR - http://www.scopus.com/inward/record.url?scp=79957733699&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79957733699&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2011.04.013

DO - 10.1016/j.mseb.2011.04.013

M3 - Article

VL - 176

SP - 840

EP - 845

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 11

ER -