Nanoscale Compositional Modification in Co/Pd Multilayers for Controllable Domain Wall Pinning in Racetrack Memory

Tianli Jin, Durgesh Kumar, Weiliang Gan, Mojtaba Ranjbar, Feilong Luo, Rachid Sbiaa, Xiaoxi Liu, Wen Siang Lew, S. N. Piramanayagam

Research output: Contribution to journalLetter

5 Citations (Scopus)

Abstract

In the era of social media, storage of information plays an important role. Magnetic domain wall memory devices are promising alternatives to hard disk drives for high-capacity storage. One of the challenges in making these devices for practical application is a precise control of domain wall displacement in nanowires. Researchers have extensively studied domain wall pinning based on topographical notches fabricated by lithography. However, scaling the domain wall memory to nanoscale requires better domain wall pinning strategies. In this letter, we demonstrate that the localized modification of magnetic properties in Co/Pd multilayer-based nanowires by ion implantation is an effective non-topographical approach to pin domain walls. First, by micromagnetic simulations, it is shown that the areas, where the composition is modified to tune the anisotropy and magnetization, act as domain wall pinning centers. Experimentally, from magnetization measurements and X-ray diffraction measurements at the thin film level, it is shown that the ion-implantation is effective in changing magnetic anisotropy. Devices have also been fabricated and, using Kerr images at different applied fields, it is shown that the domain walls are pinned at the B+ ion-implanted regions. These results demonstrate that localized compositional modification using ion-implantation can pin domain walls precisely. The achieved results are useful toward realizing high-capacity information storage.

Original languageEnglish
Article number1800197
JournalPhysica Status Solidi - Rapid Research Letters
Volume12
Issue number10
DOIs
Publication statusPublished - Oct 1 2018

Fingerprint

Domain walls
domain wall
Multilayers
Data storage equipment
Ion implantation
ion implantation
Nanowires
Magnetization
nanowires
magnetization
Magnetic domains
anisotropy
Hard disk storage
Magnetic anisotropy
notches
magnetic domains
Lithography
Magnetic properties
Anisotropy
lithography

Keywords

  • Co/Pd multilayers
  • compositional modification
  • domain wall memory
  • domain wall pinning
  • ion implantation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Nanoscale Compositional Modification in Co/Pd Multilayers for Controllable Domain Wall Pinning in Racetrack Memory. / Jin, Tianli; Kumar, Durgesh; Gan, Weiliang; Ranjbar, Mojtaba; Luo, Feilong; Sbiaa, Rachid; Liu, Xiaoxi; Lew, Wen Siang; Piramanayagam, S. N.

In: Physica Status Solidi - Rapid Research Letters, Vol. 12, No. 10, 1800197, 01.10.2018.

Research output: Contribution to journalLetter

Jin, Tianli ; Kumar, Durgesh ; Gan, Weiliang ; Ranjbar, Mojtaba ; Luo, Feilong ; Sbiaa, Rachid ; Liu, Xiaoxi ; Lew, Wen Siang ; Piramanayagam, S. N. / Nanoscale Compositional Modification in Co/Pd Multilayers for Controllable Domain Wall Pinning in Racetrack Memory. In: Physica Status Solidi - Rapid Research Letters. 2018 ; Vol. 12, No. 10.
@article{0a9a1bfd1ac4458fbbf81bf8c1ba174a,
title = "Nanoscale Compositional Modification in Co/Pd Multilayers for Controllable Domain Wall Pinning in Racetrack Memory",
abstract = "In the era of social media, storage of information plays an important role. Magnetic domain wall memory devices are promising alternatives to hard disk drives for high-capacity storage. One of the challenges in making these devices for practical application is a precise control of domain wall displacement in nanowires. Researchers have extensively studied domain wall pinning based on topographical notches fabricated by lithography. However, scaling the domain wall memory to nanoscale requires better domain wall pinning strategies. In this letter, we demonstrate that the localized modification of magnetic properties in Co/Pd multilayer-based nanowires by ion implantation is an effective non-topographical approach to pin domain walls. First, by micromagnetic simulations, it is shown that the areas, where the composition is modified to tune the anisotropy and magnetization, act as domain wall pinning centers. Experimentally, from magnetization measurements and X-ray diffraction measurements at the thin film level, it is shown that the ion-implantation is effective in changing magnetic anisotropy. Devices have also been fabricated and, using Kerr images at different applied fields, it is shown that the domain walls are pinned at the B+ ion-implanted regions. These results demonstrate that localized compositional modification using ion-implantation can pin domain walls precisely. The achieved results are useful toward realizing high-capacity information storage.",
keywords = "Co/Pd multilayers, compositional modification, domain wall memory, domain wall pinning, ion implantation",
author = "Tianli Jin and Durgesh Kumar and Weiliang Gan and Mojtaba Ranjbar and Feilong Luo and Rachid Sbiaa and Xiaoxi Liu and Lew, {Wen Siang} and Piramanayagam, {S. N.}",
year = "2018",
month = "10",
day = "1",
doi = "10.1002/pssr.201800197",
language = "English",
volume = "12",
journal = "Physica Status Solidi - Rapid Research Letters",
issn = "1862-6254",
publisher = "Wiley-VCH Verlag",
number = "10",

}

TY - JOUR

T1 - Nanoscale Compositional Modification in Co/Pd Multilayers for Controllable Domain Wall Pinning in Racetrack Memory

AU - Jin, Tianli

AU - Kumar, Durgesh

AU - Gan, Weiliang

AU - Ranjbar, Mojtaba

AU - Luo, Feilong

AU - Sbiaa, Rachid

AU - Liu, Xiaoxi

AU - Lew, Wen Siang

AU - Piramanayagam, S. N.

PY - 2018/10/1

Y1 - 2018/10/1

N2 - In the era of social media, storage of information plays an important role. Magnetic domain wall memory devices are promising alternatives to hard disk drives for high-capacity storage. One of the challenges in making these devices for practical application is a precise control of domain wall displacement in nanowires. Researchers have extensively studied domain wall pinning based on topographical notches fabricated by lithography. However, scaling the domain wall memory to nanoscale requires better domain wall pinning strategies. In this letter, we demonstrate that the localized modification of magnetic properties in Co/Pd multilayer-based nanowires by ion implantation is an effective non-topographical approach to pin domain walls. First, by micromagnetic simulations, it is shown that the areas, where the composition is modified to tune the anisotropy and magnetization, act as domain wall pinning centers. Experimentally, from magnetization measurements and X-ray diffraction measurements at the thin film level, it is shown that the ion-implantation is effective in changing magnetic anisotropy. Devices have also been fabricated and, using Kerr images at different applied fields, it is shown that the domain walls are pinned at the B+ ion-implanted regions. These results demonstrate that localized compositional modification using ion-implantation can pin domain walls precisely. The achieved results are useful toward realizing high-capacity information storage.

AB - In the era of social media, storage of information plays an important role. Magnetic domain wall memory devices are promising alternatives to hard disk drives for high-capacity storage. One of the challenges in making these devices for practical application is a precise control of domain wall displacement in nanowires. Researchers have extensively studied domain wall pinning based on topographical notches fabricated by lithography. However, scaling the domain wall memory to nanoscale requires better domain wall pinning strategies. In this letter, we demonstrate that the localized modification of magnetic properties in Co/Pd multilayer-based nanowires by ion implantation is an effective non-topographical approach to pin domain walls. First, by micromagnetic simulations, it is shown that the areas, where the composition is modified to tune the anisotropy and magnetization, act as domain wall pinning centers. Experimentally, from magnetization measurements and X-ray diffraction measurements at the thin film level, it is shown that the ion-implantation is effective in changing magnetic anisotropy. Devices have also been fabricated and, using Kerr images at different applied fields, it is shown that the domain walls are pinned at the B+ ion-implanted regions. These results demonstrate that localized compositional modification using ion-implantation can pin domain walls precisely. The achieved results are useful toward realizing high-capacity information storage.

KW - Co/Pd multilayers

KW - compositional modification

KW - domain wall memory

KW - domain wall pinning

KW - ion implantation

UR - http://www.scopus.com/inward/record.url?scp=85052481111&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85052481111&partnerID=8YFLogxK

U2 - 10.1002/pssr.201800197

DO - 10.1002/pssr.201800197

M3 - Letter

VL - 12

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

SN - 1862-6254

IS - 10

M1 - 1800197

ER -