Abstract
For nanoscale electrical characterization and device fabrication, it is often desirable to fabricate planar metal electrodes separated by large aspect ratio gaps with interelectrode distances well below 100 nm. We demonstrate a self-aligned process to accomplish this goal using a thin Cr film as a sacrificial etch layer. The resulting gaps can be as small as 10 nm and have aspect ratios exceeding 1000, with excellent interelectrode isolation. Such TiAu electrodes are demonstrated on Si substrates and are used to examine a voltage-driven transition in magnetite nanostructures. This shows the utility of this fabrication approach even with relatively reactive substrates.
| Original language | English |
|---|---|
| Article number | 113102 |
| Journal | Applied Physics Letters |
| Volume | 92 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2008 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Nanogaps with very large aspect ratios for electrical measurements. / Fursina, A.; Lee, S.; Sofin, R. G S; Shvets, I. V.; Natelson, D.
In: Applied Physics Letters, Vol. 92, No. 11, 113102, 2008.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Nanogaps with very large aspect ratios for electrical measurements
AU - Fursina, A.
AU - Lee, S.
AU - Sofin, R. G S
AU - Shvets, I. V.
AU - Natelson, D.
PY - 2008
Y1 - 2008
N2 - For nanoscale electrical characterization and device fabrication, it is often desirable to fabricate planar metal electrodes separated by large aspect ratio gaps with interelectrode distances well below 100 nm. We demonstrate a self-aligned process to accomplish this goal using a thin Cr film as a sacrificial etch layer. The resulting gaps can be as small as 10 nm and have aspect ratios exceeding 1000, with excellent interelectrode isolation. Such TiAu electrodes are demonstrated on Si substrates and are used to examine a voltage-driven transition in magnetite nanostructures. This shows the utility of this fabrication approach even with relatively reactive substrates.
AB - For nanoscale electrical characterization and device fabrication, it is often desirable to fabricate planar metal electrodes separated by large aspect ratio gaps with interelectrode distances well below 100 nm. We demonstrate a self-aligned process to accomplish this goal using a thin Cr film as a sacrificial etch layer. The resulting gaps can be as small as 10 nm and have aspect ratios exceeding 1000, with excellent interelectrode isolation. Such TiAu electrodes are demonstrated on Si substrates and are used to examine a voltage-driven transition in magnetite nanostructures. This shows the utility of this fabrication approach even with relatively reactive substrates.
UR - http://www.scopus.com/inward/record.url?scp=41049083004&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=41049083004&partnerID=8YFLogxK
U2 - 10.1063/1.2895644
DO - 10.1063/1.2895644
M3 - Article
AN - SCOPUS:41049083004
VL - 92
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 11
M1 - 113102
ER -