Multi-bit per cell magnetic random access memory based on spin torque oscillator

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Magnetization dynamics of a soft magnetic layer with perpendicular anisotropy under spin transfer torque from two adjacent layers is investigated. One of these two spin polarized layers has its magnetization fixed while the second one has its magnetization oscillating at a frequency f. It is observed that the soft layer magnetization could switch only for a range of frequency around an optimal value fo. The value of fo is strongly dependent on the intrinsic properties of the soft layer and the applied electric current. This scheme could solve the problem of overwritability in multi-bit per cell magnetic random access memory and bring momentum to research in magnetic memory for high storage capacity.

Original languageEnglish
Title of host publication3rd Electronic and Green Materials International Conference 2017, EGM 2017
PublisherAmerican Institute of Physics Inc.
Volume1885
ISBN (Electronic)9780735415652
DOIs
Publication statusPublished - Sep 26 2017
Event3rd Electronic and Green Materials International Conference 2017, EGM 2017 - Aonang Krabi, Thailand
Duration: Apr 29 2017Apr 30 2017

Other

Other3rd Electronic and Green Materials International Conference 2017, EGM 2017
CountryThailand
CityAonang Krabi
Period4/29/174/30/17

Fingerprint

random access memory
torque
oscillators
cells
magnetization
magnetic storage
electric current
momentum
anisotropy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Sbiaa, R. (2017). Multi-bit per cell magnetic random access memory based on spin torque oscillator. In 3rd Electronic and Green Materials International Conference 2017, EGM 2017 (Vol. 1885). [020274] American Institute of Physics Inc.. https://doi.org/10.1063/1.5002468

Multi-bit per cell magnetic random access memory based on spin torque oscillator. / Sbiaa, Rachid.

3rd Electronic and Green Materials International Conference 2017, EGM 2017. Vol. 1885 American Institute of Physics Inc., 2017. 020274.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sbiaa, R 2017, Multi-bit per cell magnetic random access memory based on spin torque oscillator. in 3rd Electronic and Green Materials International Conference 2017, EGM 2017. vol. 1885, 020274, American Institute of Physics Inc., 3rd Electronic and Green Materials International Conference 2017, EGM 2017, Aonang Krabi, Thailand, 4/29/17. https://doi.org/10.1063/1.5002468
Sbiaa R. Multi-bit per cell magnetic random access memory based on spin torque oscillator. In 3rd Electronic and Green Materials International Conference 2017, EGM 2017. Vol. 1885. American Institute of Physics Inc. 2017. 020274 https://doi.org/10.1063/1.5002468
Sbiaa, Rachid. / Multi-bit per cell magnetic random access memory based on spin torque oscillator. 3rd Electronic and Green Materials International Conference 2017, EGM 2017. Vol. 1885 American Institute of Physics Inc., 2017.
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