Multi-bit per cell magnetic random access memory based on spin torque oscillator

Rachid Sbiaa

doi:10.1063/1.5002468

Multi-bit per cell magnetic random access memory based on spin torque oscillator

Rachid Sbiaa^*

^*Corresponding author for this work

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Magnetization dynamics of a soft magnetic layer with perpendicular anisotropy under spin transfer torque from two adjacent layers is investigated. One of these two spin polarized layers has its magnetization fixed while the second one has its magnetization oscillating at a frequency f. It is observed that the soft layer magnetization could switch only for a range of frequency around an optimal value f_o. The value of f_o is strongly dependent on the intrinsic properties of the soft layer and the applied electric current. This scheme could solve the problem of overwritability in multi-bit per cell magnetic random access memory and bring momentum to research in magnetic memory for high storage capacity.

Original language	English
Title of host publication	3rd Electronic and Green Materials International Conference 2017, EGM 2017
Publisher	American Institute of Physics Inc.
Volume	1885
ISBN (Electronic)	9780735415652
DOIs	https://doi.org/10.1063/1.5002468
Publication status	Published - Sept 26 2017
Event	3rd Electronic and Green Materials International Conference 2017, EGM 2017 - Aonang Krabi, Thailand Duration: Apr 29 2017 → Apr 30 2017

Other

Other	3rd Electronic and Green Materials International Conference 2017, EGM 2017
Country/Territory	Thailand
City	Aonang Krabi
Period	4/29/17 → 4/30/17

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.5002468

Cite this

Sbiaa, R 2017, Multi-bit per cell magnetic random access memory based on spin torque oscillator. in 3rd Electronic and Green Materials International Conference 2017, EGM 2017. vol. 1885, 020274, American Institute of Physics Inc., 3rd Electronic and Green Materials International Conference 2017, EGM 2017, Aonang Krabi, Thailand, 4/29/17. https://doi.org/10.1063/1.5002468

@inproceedings{7876eb5b620742bab1b0e083389b8d10,

title = "Multi-bit per cell magnetic random access memory based on spin torque oscillator",

abstract = "Magnetization dynamics of a soft magnetic layer with perpendicular anisotropy under spin transfer torque from two adjacent layers is investigated. One of these two spin polarized layers has its magnetization fixed while the second one has its magnetization oscillating at a frequency f. It is observed that the soft layer magnetization could switch only for a range of frequency around an optimal value fo. The value of fo is strongly dependent on the intrinsic properties of the soft layer and the applied electric current. This scheme could solve the problem of overwritability in multi-bit per cell magnetic random access memory and bring momentum to research in magnetic memory for high storage capacity.",

author = "Rachid Sbiaa",

year = "2017",

month = sep,

day = "26",

doi = "10.1063/1.5002468",

language = "English",

volume = "1885",

booktitle = "3rd Electronic and Green Materials International Conference 2017, EGM 2017",

publisher = "American Institute of Physics Inc.",

note = "3rd Electronic and Green Materials International Conference 2017, EGM 2017 ; Conference date: 29-04-2017 Through 30-04-2017",

}

TY - GEN

T1 - Multi-bit per cell magnetic random access memory based on spin torque oscillator

AU - Sbiaa, Rachid

PY - 2017/9/26

Y1 - 2017/9/26

N2 - Magnetization dynamics of a soft magnetic layer with perpendicular anisotropy under spin transfer torque from two adjacent layers is investigated. One of these two spin polarized layers has its magnetization fixed while the second one has its magnetization oscillating at a frequency f. It is observed that the soft layer magnetization could switch only for a range of frequency around an optimal value fo. The value of fo is strongly dependent on the intrinsic properties of the soft layer and the applied electric current. This scheme could solve the problem of overwritability in multi-bit per cell magnetic random access memory and bring momentum to research in magnetic memory for high storage capacity.

AB - Magnetization dynamics of a soft magnetic layer with perpendicular anisotropy under spin transfer torque from two adjacent layers is investigated. One of these two spin polarized layers has its magnetization fixed while the second one has its magnetization oscillating at a frequency f. It is observed that the soft layer magnetization could switch only for a range of frequency around an optimal value fo. The value of fo is strongly dependent on the intrinsic properties of the soft layer and the applied electric current. This scheme could solve the problem of overwritability in multi-bit per cell magnetic random access memory and bring momentum to research in magnetic memory for high storage capacity.

UR - http://www.scopus.com/inward/record.url?scp=85030683140&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85030683140&partnerID=8YFLogxK

U2 - 10.1063/1.5002468

DO - 10.1063/1.5002468

M3 - Conference contribution

AN - SCOPUS:85030683140

VL - 1885

BT - 3rd Electronic and Green Materials International Conference 2017, EGM 2017

PB - American Institute of Physics Inc.

T2 - 3rd Electronic and Green Materials International Conference 2017, EGM 2017

Y2 - 29 April 2017 through 30 April 2017

ER -

Multi-bit per cell magnetic random access memory based on spin torque oscillator

Abstract

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this