Multi-bit per cell magnetic random access memory based on spin torque oscillator

Rachid Sbiaa

doi:10.1063/1.5002468

Multi-bit per cell magnetic random access memory based on spin torque oscillator

Rachid Sbiaa^*

^*Corresponding author for this work

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Magnetization dynamics of a soft magnetic layer with perpendicular anisotropy under spin transfer torque from two adjacent layers is investigated. One of these two spin polarized layers has its magnetization fixed while the second one has its magnetization oscillating at a frequency f. It is observed that the soft layer magnetization could switch only for a range of frequency around an optimal value f_o. The value of f_o is strongly dependent on the intrinsic properties of the soft layer and the applied electric current. This scheme could solve the problem of overwritability in multi-bit per cell magnetic random access memory and bring momentum to research in magnetic memory for high storage capacity.

Original language	English
Title of host publication	3rd Electronic and Green Materials International Conference 2017, EGM 2017
Editors	Mohd Fathullah Ghazli, Rizalafande Che Ismail, Mohd. Mustafa Albakri Abdullah, Muhammad Mahyiddin Ramli, Shayfull Zamree Abd Rahim, Siti Salwa Mat Isa, Mohd Nasir Mat Saad
Publisher	American Institute of Physics Inc.
ISBN (Electronic)	9780735415652
DOIs	https://doi.org/10.1063/1.5002468
Publication status	Published - Sept 26 2017
Event	3rd Electronic and Green Materials International Conference 2017, EGM 2017 - Aonang Krabi, Thailand Duration: Apr 29 2017 → Apr 30 2017

Publication series

Name	AIP Conference Proceedings
Volume	1885
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	3rd Electronic and Green Materials International Conference 2017, EGM 2017
Country/Territory	Thailand
City	Aonang Krabi
Period	4/29/17 → 4/30/17

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.5002468

Cite this

Sbiaa, R. (2017). Multi-bit per cell magnetic random access memory based on spin torque oscillator. In M. F. Ghazli, R. C. Ismail, M. M. A. Abdullah, M. M. Ramli, S. Z. A. Rahim, S. S. M. Isa, & M. N. M. Saad (Eds.), 3rd Electronic and Green Materials International Conference 2017, EGM 2017 Article 020274 (AIP Conference Proceedings; Vol. 1885). American Institute of Physics Inc.. https://doi.org/10.1063/1.5002468

Multi-bit per cell magnetic random access memory based on spin torque oscillator. / Sbiaa, Rachid.
3rd Electronic and Green Materials International Conference 2017, EGM 2017. ed. / Mohd Fathullah Ghazli; Rizalafande Che Ismail; Mohd. Mustafa Albakri Abdullah; Muhammad Mahyiddin Ramli; Shayfull Zamree Abd Rahim; Siti Salwa Mat Isa; Mohd Nasir Mat Saad. American Institute of Physics Inc., 2017. 020274 (AIP Conference Proceedings; Vol. 1885).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sbiaa, R 2017, Multi-bit per cell magnetic random access memory based on spin torque oscillator. in MF Ghazli, RC Ismail, MMA Abdullah, MM Ramli, SZA Rahim, SSM Isa & MNM Saad (eds), 3rd Electronic and Green Materials International Conference 2017, EGM 2017., 020274, AIP Conference Proceedings, vol. 1885, American Institute of Physics Inc., 3rd Electronic and Green Materials International Conference 2017, EGM 2017, Aonang Krabi, Thailand, 4/29/17. https://doi.org/10.1063/1.5002468

Sbiaa, Rachid. / Multi-bit per cell magnetic random access memory based on spin torque oscillator. 3rd Electronic and Green Materials International Conference 2017, EGM 2017. editor / Mohd Fathullah Ghazli ; Rizalafande Che Ismail ; Mohd. Mustafa Albakri Abdullah ; Muhammad Mahyiddin Ramli ; Shayfull Zamree Abd Rahim ; Siti Salwa Mat Isa ; Mohd Nasir Mat Saad. American Institute of Physics Inc., 2017. (AIP Conference Proceedings).

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abstract = "Magnetization dynamics of a soft magnetic layer with perpendicular anisotropy under spin transfer torque from two adjacent layers is investigated. One of these two spin polarized layers has its magnetization fixed while the second one has its magnetization oscillating at a frequency f. It is observed that the soft layer magnetization could switch only for a range of frequency around an optimal value fo. The value of fo is strongly dependent on the intrinsic properties of the soft layer and the applied electric current. This scheme could solve the problem of overwritability in multi-bit per cell magnetic random access memory and bring momentum to research in magnetic memory for high storage capacity.",

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N2 - Magnetization dynamics of a soft magnetic layer with perpendicular anisotropy under spin transfer torque from two adjacent layers is investigated. One of these two spin polarized layers has its magnetization fixed while the second one has its magnetization oscillating at a frequency f. It is observed that the soft layer magnetization could switch only for a range of frequency around an optimal value fo. The value of fo is strongly dependent on the intrinsic properties of the soft layer and the applied electric current. This scheme could solve the problem of overwritability in multi-bit per cell magnetic random access memory and bring momentum to research in magnetic memory for high storage capacity.

AB - Magnetization dynamics of a soft magnetic layer with perpendicular anisotropy under spin transfer torque from two adjacent layers is investigated. One of these two spin polarized layers has its magnetization fixed while the second one has its magnetization oscillating at a frequency f. It is observed that the soft layer magnetization could switch only for a range of frequency around an optimal value fo. The value of fo is strongly dependent on the intrinsic properties of the soft layer and the applied electric current. This scheme could solve the problem of overwritability in multi-bit per cell magnetic random access memory and bring momentum to research in magnetic memory for high storage capacity.

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Multi-bit per cell magnetic random access memory based on spin torque oscillator

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