MRAM device incorporating single-layer switching via rashba-induced spin torque

Jie Guo, Seng Ghee Tan, Mansoor Bin Abdul Jalil, Kwaku Eason, Sunny Yan Hwee Lua, Sbiaa Rachid, Hao Meng

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We designed and modeled a nonvolatile memory device that utilizes the Rashba spin-orbit coupling (SOC) to write data onto a free ferromagnetic (FM) layer and uses the tunneling magnetoresistive (TMR) effect for data read-back. The magnetic RAM (MRAM) device consists of a free (switchable) FM multilayer stack, in which a large internal electric field is induced at the interfaces between the oxide and the FM layer. In the FM layer, data writing by magnetization switching occurs via the Rashba-induced spin torque, while the data reading process in the system could be fulfilled via the current-perpendicular-to-plane TMR response. A general equation of motion for the local moments has been obtained by formally deriving the SU(2) spin-orbit gauge field arising due to SOC and the critical current density is estimated to be 1.2× 108 A/cm2. Micromagnetic simulations were performed to demonstrate the Rashba-induced switching mechanism. By choosing or fabricating alloys with a lower magnetocrystalline anisotropy and enhancing the Rashba coupling strength via surface or interfacial engineering, the critical current may be further reduced to well below 107 A/cm2, a level that may enable the practical realization of a single-layer Rashba-induced magnetization switching memory.

Original languageEnglish
Article number6027645
Pages (from-to)3868-3871
Number of pages4
JournalIEEE Transactions on Magnetics
Volume47
Issue number10
DOIs
Publication statusPublished - Oct 2011

Keywords

  • Magnetic RAM (MRAM)
  • Rashba spin-orbit interaction
  • spin transfer torque (STT)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Guo, J., Tan, S. G., Jalil, M. B. A., Eason, K., Lua, S. Y. H., Rachid, S., & Meng, H. (2011). MRAM device incorporating single-layer switching via rashba-induced spin torque. IEEE Transactions on Magnetics, 47(10), 3868-3871. [6027645]. https://doi.org/10.1109/TMAG.2011.2158634