MRAM device incorporating single-layer switching via rashba-induced spin torque

Jie Guo, Seng Ghee Tan, Mansoor Bin Abdul Jalil, Kwaku Eason, Sunny Yan Hwee Lua, Sbiaa Rachid, Hao Meng

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We designed and modeled a nonvolatile memory device that utilizes the Rashba spin-orbit coupling (SOC) to write data onto a free ferromagnetic (FM) layer and uses the tunneling magnetoresistive (TMR) effect for data read-back. The magnetic RAM (MRAM) device consists of a free (switchable) FM multilayer stack, in which a large internal electric field is induced at the interfaces between the oxide and the FM layer. In the FM layer, data writing by magnetization switching occurs via the Rashba-induced spin torque, while the data reading process in the system could be fulfilled via the current-perpendicular-to-plane TMR response. A general equation of motion for the local moments has been obtained by formally deriving the SU(2) spin-orbit gauge field arising due to SOC and the critical current density is estimated to be 1.2× 108 A/cm2. Micromagnetic simulations were performed to demonstrate the Rashba-induced switching mechanism. By choosing or fabricating alloys with a lower magnetocrystalline anisotropy and enhancing the Rashba coupling strength via surface or interfacial engineering, the critical current may be further reduced to well below 107 A/cm2, a level that may enable the practical realization of a single-layer Rashba-induced magnetization switching memory.

Original languageEnglish
Article number6027645
Pages (from-to)3868-3871
Number of pages4
JournalIEEE Transactions on Magnetics
Volume47
Issue number10
DOIs
Publication statusPublished - Oct 2011

Fingerprint

Random access storage
Orbits
Torque
Magnetization
Magnetocrystalline anisotropy
Data storage equipment
Critical currents
Oxides
Gages
Equations of motion
Multilayers
Electric fields

Keywords

  • Magnetic RAM (MRAM)
  • Rashba spin-orbit interaction
  • spin transfer torque (STT)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Guo, J., Tan, S. G., Jalil, M. B. A., Eason, K., Lua, S. Y. H., Rachid, S., & Meng, H. (2011). MRAM device incorporating single-layer switching via rashba-induced spin torque. IEEE Transactions on Magnetics, 47(10), 3868-3871. [6027645]. https://doi.org/10.1109/TMAG.2011.2158634

MRAM device incorporating single-layer switching via rashba-induced spin torque. / Guo, Jie; Tan, Seng Ghee; Jalil, Mansoor Bin Abdul; Eason, Kwaku; Lua, Sunny Yan Hwee; Rachid, Sbiaa; Meng, Hao.

In: IEEE Transactions on Magnetics, Vol. 47, No. 10, 6027645, 10.2011, p. 3868-3871.

Research output: Contribution to journalArticle

Guo, J, Tan, SG, Jalil, MBA, Eason, K, Lua, SYH, Rachid, S & Meng, H 2011, 'MRAM device incorporating single-layer switching via rashba-induced spin torque', IEEE Transactions on Magnetics, vol. 47, no. 10, 6027645, pp. 3868-3871. https://doi.org/10.1109/TMAG.2011.2158634
Guo, Jie ; Tan, Seng Ghee ; Jalil, Mansoor Bin Abdul ; Eason, Kwaku ; Lua, Sunny Yan Hwee ; Rachid, Sbiaa ; Meng, Hao. / MRAM device incorporating single-layer switching via rashba-induced spin torque. In: IEEE Transactions on Magnetics. 2011 ; Vol. 47, No. 10. pp. 3868-3871.
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