Morphology dependent electrical transport behavior in gold nanostructures

A. Alkhatib, T. Souier, M. Chiesa

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The mechanism of electron transport in ultra-thin gold films is investigated and its dependence on the gold islands size is reported. For gold films of thickness below 38 nm, the electrical transport occurs by tunneling within electrically discontinuous islands of gold. Simmons model for metal-insulator-metal junction describes the non-ohmic experimental current-voltage curves obtained by means of conductive atomic force microscopy. Field emission is the predominant transport for thicknesses below 23 nm while direct tunneling occurs in thicker films. The transition between the two regimes is controlled by the gold islands size and their inter-distance.

Original languageEnglish
Pages (from-to)656-661
Number of pages6
JournalThin Solid Films
Volume520
Issue number1
DOIs
Publication statusPublished - Oct 31 2011

Fingerprint

Gold
Nanostructures
gold
Metals
Thick films
Field emission
metals
thick films
field emission
Atomic force microscopy
insulators
atomic force microscopy
Electric potential
electric potential
curves
electrons

Keywords

  • Electrical transport
  • Gold
  • Nanoparticles
  • Tunneling
  • Ultra thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Morphology dependent electrical transport behavior in gold nanostructures. / Alkhatib, A.; Souier, T.; Chiesa, M.

In: Thin Solid Films, Vol. 520, No. 1, 31.10.2011, p. 656-661.

Research output: Contribution to journalArticle

Alkhatib, A. ; Souier, T. ; Chiesa, M. / Morphology dependent electrical transport behavior in gold nanostructures. In: Thin Solid Films. 2011 ; Vol. 520, No. 1. pp. 656-661.
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