Morphology dependent electrical transport behavior in gold nanostructures

A. Alkhatib; T. Souier; M. Chiesa

doi:10.1016/j.tsf.2011.08.069

Morphology dependent electrical transport behavior in gold nanostructures

A. Alkhatib, T. Souier, M. Chiesa^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The mechanism of electron transport in ultra-thin gold films is investigated and its dependence on the gold islands size is reported. For gold films of thickness below 38 nm, the electrical transport occurs by tunneling within electrically discontinuous islands of gold. Simmons model for metal-insulator-metal junction describes the non-ohmic experimental current-voltage curves obtained by means of conductive atomic force microscopy. Field emission is the predominant transport for thicknesses below 23 nm while direct tunneling occurs in thicker films. The transition between the two regimes is controlled by the gold islands size and their inter-distance.

Original language	English
Pages (from-to)	656-661
Number of pages	6
Journal	Thin Solid Films
Volume	520
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2011.08.069
Publication status	Published - Oct 31 2011
Externally published	Yes

Keywords

Electrical transport
Gold
Nanoparticles
Tunneling
Ultra thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2011.08.069

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AU - Alkhatib, A.

AU - Souier, T.

AU - Chiesa, M.

PY - 2011/10/31

Y1 - 2011/10/31

N2 - The mechanism of electron transport in ultra-thin gold films is investigated and its dependence on the gold islands size is reported. For gold films of thickness below 38 nm, the electrical transport occurs by tunneling within electrically discontinuous islands of gold. Simmons model for metal-insulator-metal junction describes the non-ohmic experimental current-voltage curves obtained by means of conductive atomic force microscopy. Field emission is the predominant transport for thicknesses below 23 nm while direct tunneling occurs in thicker films. The transition between the two regimes is controlled by the gold islands size and their inter-distance.

AB - The mechanism of electron transport in ultra-thin gold films is investigated and its dependence on the gold islands size is reported. For gold films of thickness below 38 nm, the electrical transport occurs by tunneling within electrically discontinuous islands of gold. Simmons model for metal-insulator-metal junction describes the non-ohmic experimental current-voltage curves obtained by means of conductive atomic force microscopy. Field emission is the predominant transport for thicknesses below 23 nm while direct tunneling occurs in thicker films. The transition between the two regimes is controlled by the gold islands size and their inter-distance.

KW - Electrical transport

KW - Gold

KW - Nanoparticles

KW - Tunneling

KW - Ultra thin films

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JO - Thin Solid Films

JF - Thin Solid Films

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Morphology dependent electrical transport behavior in gold nanostructures

Abstract

Keywords

ASJC Scopus subject areas

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