Monte Carlo calculations of quantum yield in inhomogeneous PtSi/p-Si Schottky barriers

A. Sellai, P. Dawson

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Monte Carlo calculations of quantum yield in PtSi/p-Si infrared detectors are carried out taking into account the presence of a spatially distributed barrier potential. In the 1-4 μm wavelength range it is found that the spatial inhomogeneity of the barrier has no significant effect on the overall device photoresponse. However, above λ = 4.0 μm and particularly as the cut-off wavelength (μ ≈ 5.5 μm) is approached, these calculations reveal a difference between the homogeneous and inhomogeneous barrier photoresponse which becomes increasingly significant and exceeds 50% at λ = 5.3 μm. It is, in fact, the inhomogeneous barrier which displays an increased photoyield, a feature that is confirmed by approximate analytical calculations assuming a symmetric Gaussian spatial distribution of the barrier. Furthermore, the importance of the silicide layer thickness in optimizing device efficiency is underlined as a trade-off between maximizing light absorption in the silicide layer and optimizing the internal yield. The results presented here address important features which determine the photoyield of PtSi/Si Schottky diodes at energies below the Si absorption edge and just above the Schottky barrier height in particular.

Original languageEnglish
Pages (from-to)700-704
Number of pages5
JournalSemiconductor Science and Technology
Volume13
Issue number7
DOIs
Publication statusPublished - Jul 1998

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Quantum yield
Wavelength
Infrared detectors
Light absorption
Spatial distribution
Diodes
infrared detectors
electromagnetic absorption
Schottky diodes
wavelengths
spatial distribution
inhomogeneity
cut-off

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Monte Carlo calculations of quantum yield in inhomogeneous PtSi/p-Si Schottky barriers. / Sellai, A.; Dawson, P.

In: Semiconductor Science and Technology, Vol. 13, No. 7, 07.1998, p. 700-704.

Research output: Contribution to journalArticle

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abstract = "Monte Carlo calculations of quantum yield in PtSi/p-Si infrared detectors are carried out taking into account the presence of a spatially distributed barrier potential. In the 1-4 μm wavelength range it is found that the spatial inhomogeneity of the barrier has no significant effect on the overall device photoresponse. However, above λ = 4.0 μm and particularly as the cut-off wavelength (μ ≈ 5.5 μm) is approached, these calculations reveal a difference between the homogeneous and inhomogeneous barrier photoresponse which becomes increasingly significant and exceeds 50{\%} at λ = 5.3 μm. It is, in fact, the inhomogeneous barrier which displays an increased photoyield, a feature that is confirmed by approximate analytical calculations assuming a symmetric Gaussian spatial distribution of the barrier. Furthermore, the importance of the silicide layer thickness in optimizing device efficiency is underlined as a trade-off between maximizing light absorption in the silicide layer and optimizing the internal yield. The results presented here address important features which determine the photoyield of PtSi/Si Schottky diodes at energies below the Si absorption edge and just above the Schottky barrier height in particular.",
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AB - Monte Carlo calculations of quantum yield in PtSi/p-Si infrared detectors are carried out taking into account the presence of a spatially distributed barrier potential. In the 1-4 μm wavelength range it is found that the spatial inhomogeneity of the barrier has no significant effect on the overall device photoresponse. However, above λ = 4.0 μm and particularly as the cut-off wavelength (μ ≈ 5.5 μm) is approached, these calculations reveal a difference between the homogeneous and inhomogeneous barrier photoresponse which becomes increasingly significant and exceeds 50% at λ = 5.3 μm. It is, in fact, the inhomogeneous barrier which displays an increased photoyield, a feature that is confirmed by approximate analytical calculations assuming a symmetric Gaussian spatial distribution of the barrier. Furthermore, the importance of the silicide layer thickness in optimizing device efficiency is underlined as a trade-off between maximizing light absorption in the silicide layer and optimizing the internal yield. The results presented here address important features which determine the photoyield of PtSi/Si Schottky diodes at energies below the Si absorption edge and just above the Schottky barrier height in particular.

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