### Abstract

Monte Carlo calculations of quantum yield in PtSi/p-Si infrared detectors are carried out taking into account the presence of a spatially distributed barrier potential. In the 1-4 μm wavelength range it is found that the spatial inhomogeneity of the barrier has no significant effect on the overall device photoresponse. However, above λ = 4.0 μm and particularly as the cut-off wavelength (μ ≈ 5.5 μm) is approached, these calculations reveal a difference between the homogeneous and inhomogeneous barrier photoresponse which becomes increasingly significant and exceeds 50% at λ = 5.3 μm. It is, in fact, the inhomogeneous barrier which displays an increased photoyield, a feature that is confirmed by approximate analytical calculations assuming a symmetric Gaussian spatial distribution of the barrier. Furthermore, the importance of the silicide layer thickness in optimizing device efficiency is underlined as a trade-off between maximizing light absorption in the silicide layer and optimizing the internal yield. The results presented here address important features which determine the photoyield of PtSi/Si Schottky diodes at energies below the Si absorption edge and just above the Schottky barrier height in particular.

Original language | English |
---|---|

Pages (from-to) | 700-704 |

Number of pages | 5 |

Journal | Semiconductor Science and Technology |

Volume | 13 |

Issue number | 7 |

DOIs | |

Publication status | Published - Jul 1998 |

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### ASJC Scopus subject areas

- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics

### Cite this

**Monte Carlo calculations of quantum yield in inhomogeneous PtSi/p-Si Schottky barriers.** / Sellai, A.; Dawson, P.

Research output: Contribution to journal › Article

*Semiconductor Science and Technology*, vol. 13, no. 7, pp. 700-704. https://doi.org/10.1088/0268-1242/13/7/007

}

TY - JOUR

T1 - Monte Carlo calculations of quantum yield in inhomogeneous PtSi/p-Si Schottky barriers

AU - Sellai, A.

AU - Dawson, P.

PY - 1998/7

Y1 - 1998/7

N2 - Monte Carlo calculations of quantum yield in PtSi/p-Si infrared detectors are carried out taking into account the presence of a spatially distributed barrier potential. In the 1-4 μm wavelength range it is found that the spatial inhomogeneity of the barrier has no significant effect on the overall device photoresponse. However, above λ = 4.0 μm and particularly as the cut-off wavelength (μ ≈ 5.5 μm) is approached, these calculations reveal a difference between the homogeneous and inhomogeneous barrier photoresponse which becomes increasingly significant and exceeds 50% at λ = 5.3 μm. It is, in fact, the inhomogeneous barrier which displays an increased photoyield, a feature that is confirmed by approximate analytical calculations assuming a symmetric Gaussian spatial distribution of the barrier. Furthermore, the importance of the silicide layer thickness in optimizing device efficiency is underlined as a trade-off between maximizing light absorption in the silicide layer and optimizing the internal yield. The results presented here address important features which determine the photoyield of PtSi/Si Schottky diodes at energies below the Si absorption edge and just above the Schottky barrier height in particular.

AB - Monte Carlo calculations of quantum yield in PtSi/p-Si infrared detectors are carried out taking into account the presence of a spatially distributed barrier potential. In the 1-4 μm wavelength range it is found that the spatial inhomogeneity of the barrier has no significant effect on the overall device photoresponse. However, above λ = 4.0 μm and particularly as the cut-off wavelength (μ ≈ 5.5 μm) is approached, these calculations reveal a difference between the homogeneous and inhomogeneous barrier photoresponse which becomes increasingly significant and exceeds 50% at λ = 5.3 μm. It is, in fact, the inhomogeneous barrier which displays an increased photoyield, a feature that is confirmed by approximate analytical calculations assuming a symmetric Gaussian spatial distribution of the barrier. Furthermore, the importance of the silicide layer thickness in optimizing device efficiency is underlined as a trade-off between maximizing light absorption in the silicide layer and optimizing the internal yield. The results presented here address important features which determine the photoyield of PtSi/Si Schottky diodes at energies below the Si absorption edge and just above the Schottky barrier height in particular.

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UR - http://www.scopus.com/inward/citedby.url?scp=0032118180&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/13/7/007

DO - 10.1088/0268-1242/13/7/007

M3 - Article

VL - 13

SP - 700

EP - 704

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 7

ER -