Modeling the effect of deep traps on the capacitance-voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Nouredine Sengouga*, Rami Boumaraf, Riaz H. Mari, Afak Meftah, Dler Jameel, Noor Al Saqri, Mohsin Azziz, David Taylor, Mohamed Henini

*Corresponding author for this work

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