Modeling the effect of deep traps on the capacitance-voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Nouredine Sengouga, Rami Boumaraf, Riaz H. Mari, Afak Meftah, Dler Jameel, Noor Al Saqri, Mohsin Azziz, David Taylor, Mohamed Henini

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Abstract Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance-voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance-voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance-voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.

Original languageEnglish
Pages (from-to)156-161
Number of pages6
JournalMaterials Science in Semiconductor Processing
Volume36
DOIs
Publication statusPublished - Aug 1 2015

Fingerprint

capacitance-voltage characteristics
Schottky diodes
Diodes
Capacitance
traps
Electric potential
Substrates
diodes
Hole traps
Deep level transient spectroscopy
capacitance
Molecular beam epitaxy
Spatial distribution
minorities
display devices
Display devices
gallium arsenide
spatial distribution
molecular beam epitaxy
simulation

Keywords

  • High index GaAs
  • Negative differential capacitance: deep levels
  • SILVACO simulation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Modeling the effect of deep traps on the capacitance-voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. / Sengouga, Nouredine; Boumaraf, Rami; Mari, Riaz H.; Meftah, Afak; Jameel, Dler; Al Saqri, Noor; Azziz, Mohsin; Taylor, David; Henini, Mohamed.

In: Materials Science in Semiconductor Processing, Vol. 36, 01.08.2015, p. 156-161.

Research output: Contribution to journalArticle

Sengouga, Nouredine ; Boumaraf, Rami ; Mari, Riaz H. ; Meftah, Afak ; Jameel, Dler ; Al Saqri, Noor ; Azziz, Mohsin ; Taylor, David ; Henini, Mohamed. / Modeling the effect of deep traps on the capacitance-voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. In: Materials Science in Semiconductor Processing. 2015 ; Vol. 36. pp. 156-161.
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AU - Jameel, Dler

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AU - Azziz, Mohsin

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N2 - Abstract Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance-voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance-voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance-voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.

AB - Abstract Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance-voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance-voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance-voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.

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