Modeling the effect of deep traps on the capacitance-voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Nouredine Sengouga, Rami Boumaraf, Riaz H. Mari, Afak Meftah, Dler Jameel, Noor Al Saqri, Mohsin Azziz, David Taylor, Mohamed Henini

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3 Citations (Scopus)

Abstract

Abstract Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance-voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance-voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance-voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.

Original languageEnglish
Pages (from-to)156-161
Number of pages6
JournalMaterials Science in Semiconductor Processing
Volume36
DOIs
Publication statusPublished - Aug 1 2015

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Keywords

  • High index GaAs
  • Negative differential capacitance: deep levels
  • SILVACO simulation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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