Medium-voltage pulse width modulated current source rectifiers using different semiconductors: Loss and size comparison

A. K. Abdelsalam, M. I. Masoud, S. J. Finney, B. W. Williams

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

In this study, a comparison of losses and physical size is presented for three semiconductor devices suitable for medium-voltage high-power applications. The comparison is made for medium-voltage pulse width modulated (PWM) current source rectifiers (CSRs) using a selective harmonic elimination technique. The devices are high-voltage insulated gate bipolar transistors and two types of hard-driven thyristors, namely the symmetrical gate commutated thyristor and the asymmetrical gate commutated thyristor. The study is based on practical devices using data sheets from semiconductor device vendors, taking into account accurate discrimination between turn-off and recovery states. The constant-voltage switching energy data sheet curves for voltage source converters are adapted to suit varying voltage applications like the PWM-CSR, with emphasis on how voltage is shared between series devices during each commutation instant.

Original languageEnglish
Article numberIPEEBO000003000002000243000001
Pages (from-to)243-258
Number of pages16
JournalIET Power Electronics
Volume3
Issue number2
DOIs
Publication statusPublished - Mar 2010

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Semiconductor materials
Electric potential
Thyristors
Semiconductor devices
Electric commutation
Insulated gate bipolar transistors (IGBT)
Recovery

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Medium-voltage pulse width modulated current source rectifiers using different semiconductors : Loss and size comparison. / Abdelsalam, A. K.; Masoud, M. I.; Finney, S. J.; Williams, B. W.

In: IET Power Electronics, Vol. 3, No. 2, IPEEBO000003000002000243000001, 03.2010, p. 243-258.

Research output: Contribution to journalArticle

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