Mechanical properties of a 3C-SiC film between room temperature and 600 °c

Michele Pozzi, Musaab Hassan, Alun J. Harris, Jim S. Burdess, Liudi Jiang, Kin K. Lee, Rebecca Cheung, Gordon J. Phelps, Nick G. Wright, Christian A. Zorman, Mehran Mehregany

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Silicon carbide (SiC) is widely recognized as the leading candidate to replace silicon in micro-electro-mechanical systems devices operating in harsh environments. In this work, cantilevers and bridges in SiC are designed, fabricated and evaluated between room temperature (RT) and 600 °C. The active material is a cubic poly-SiC film deposited on a poly-Si layer which is separated from the Si substrate by a thermal oxide. From surface profiling and optical observations, it is deduced that an average residual strain of +5 × 10-4 is present in the 2.7 νm thick film, with a gradient of 2.5 × 10-4 νm-1. The structures are excited either mechanically or electrostatically. Their resonance frequency is measured by laser Doppler velocimetry and used to derive the Young's modulus and residual stress in the heteroepitaxial layer (330 45 GPa and 200 20 MPa, respectively). The temperature coefficient of Young's modulus is found to be -53 2 ppm K -1 in the range RT to ∼ 300 °C, while an analytical expression is given for the temperature dependence of the Young's modulus between RT and 500 °C. The residual tensile stress is found to depend on temperature in a complex manner.

Original languageEnglish
Article number012
Pages (from-to)3335-3342
Number of pages8
JournalJournal of Physics D: Applied Physics
Volume40
Issue number11
DOIs
Publication statusPublished - Jun 7 2007

Fingerprint

Silicon carbide
silicon carbides
modulus of elasticity
mechanical properties
Mechanical properties
residual stress
room temperature
Elastic moduli
tensile stress
Temperature
thick films
Residual stresses
gradients
temperature dependence
temperature
oxides
silicon
Silicon
coefficients
Thick films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Pozzi, M., Hassan, M., Harris, A. J., Burdess, J. S., Jiang, L., Lee, K. K., ... Mehregany, M. (2007). Mechanical properties of a 3C-SiC film between room temperature and 600 °c. Journal of Physics D: Applied Physics, 40(11), 3335-3342. [012]. https://doi.org/10.1088/0022-3727/40/11/012

Mechanical properties of a 3C-SiC film between room temperature and 600 °c. / Pozzi, Michele; Hassan, Musaab; Harris, Alun J.; Burdess, Jim S.; Jiang, Liudi; Lee, Kin K.; Cheung, Rebecca; Phelps, Gordon J.; Wright, Nick G.; Zorman, Christian A.; Mehregany, Mehran.

In: Journal of Physics D: Applied Physics, Vol. 40, No. 11, 012, 07.06.2007, p. 3335-3342.

Research output: Contribution to journalArticle

Pozzi, M, Hassan, M, Harris, AJ, Burdess, JS, Jiang, L, Lee, KK, Cheung, R, Phelps, GJ, Wright, NG, Zorman, CA & Mehregany, M 2007, 'Mechanical properties of a 3C-SiC film between room temperature and 600 °c', Journal of Physics D: Applied Physics, vol. 40, no. 11, 012, pp. 3335-3342. https://doi.org/10.1088/0022-3727/40/11/012
Pozzi, Michele ; Hassan, Musaab ; Harris, Alun J. ; Burdess, Jim S. ; Jiang, Liudi ; Lee, Kin K. ; Cheung, Rebecca ; Phelps, Gordon J. ; Wright, Nick G. ; Zorman, Christian A. ; Mehregany, Mehran. / Mechanical properties of a 3C-SiC film between room temperature and 600 °c. In: Journal of Physics D: Applied Physics. 2007 ; Vol. 40, No. 11. pp. 3335-3342.
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