Magnetization switching by spin-torque effect in off-aligned structure with perpendicular anisotropy

We have studied spin transfer torque (STT) switching in a magnetic tunnel junction with perpendicular magnetic anisotropy for the reference and free layers using the Landau-Lifshitz-Gilbert formalism. When the free layer magnetization is off-aligned by a small angle of less than 5° with respect to reference layer magnetization, a strong improvement of its switching time by about 30% is observed. Furthermore, both a reduction of the critical switching current and its distribution are obtained. This structure design could solve some of the major problems faced by the magnetic memory based on STT effect. It is then possible to achieve high writing speed, with low power and without overwriting on the neighbouring data or bits.