Abstract
In this paper, a comparison of losses and size for three semiconductor devices suitable for medium voltage (2.4 kV, 3.3 kV and 6.6 kV) high power applications is presented. The comparison is made for medium voltage PWM current source rectifiers using a selective harmonic elimination technique. The devices compared are High Voltage Insulated Gate Bipolar Transistor (HVIGBT) and two types of hard-driven thyristors, namely, the Symmetrical Gate Commutated Thyristor (SGCT) and the Asymmetrical Gate Commutated Thyristor (AGCT). The study depends on practical devices, data sheets from well known semiconductor vendors, taking into account accurate discrimination between turn-off and recovery states.
| Original language | English |
|---|---|
| Title of host publication | SPEEDAM 2008 - International Symposium on Power Electronics, Electrical Drives, Automation and Motion |
| Pages | 1356-1362 |
| Number of pages | 7 |
| DOIs | |
| Publication status | Published - 2008 |
| Event | SPEEDAM 2008 - International Symposium on Power Electronics, Electrical Drives, Automation and Motion - Ischia, Italy Duration: Jun 11 2008 → Jun 13 2008 |
Other
| Other | SPEEDAM 2008 - International Symposium on Power Electronics, Electrical Drives, Automation and Motion |
|---|---|
| Country | Italy |
| City | Ischia |
| Period | 6/11/08 → 6/13/08 |
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Keywords
- Current source rectifiers
- Losses calculations
- Medium voltage and semiconductors
ASJC Scopus subject areas
- Software
- Electrical and Electronic Engineering
Cite this
Losses calculation for medium voltage PWM current source rectifiers using different semiconductor devices. / Abdelsalam, Ahmed K.; Masoud, Mahmoud I.; Finney, Stephen J.; Williams, Barry W.
SPEEDAM 2008 - International Symposium on Power Electronics, Electrical Drives, Automation and Motion. 2008. p. 1356-1362 4581134.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Losses calculation for medium voltage PWM current source rectifiers using different semiconductor devices
AU - Abdelsalam, Ahmed K.
AU - Masoud, Mahmoud I.
AU - Finney, Stephen J.
AU - Williams, Barry W.
PY - 2008
Y1 - 2008
N2 - In this paper, a comparison of losses and size for three semiconductor devices suitable for medium voltage (2.4 kV, 3.3 kV and 6.6 kV) high power applications is presented. The comparison is made for medium voltage PWM current source rectifiers using a selective harmonic elimination technique. The devices compared are High Voltage Insulated Gate Bipolar Transistor (HVIGBT) and two types of hard-driven thyristors, namely, the Symmetrical Gate Commutated Thyristor (SGCT) and the Asymmetrical Gate Commutated Thyristor (AGCT). The study depends on practical devices, data sheets from well known semiconductor vendors, taking into account accurate discrimination between turn-off and recovery states.
AB - In this paper, a comparison of losses and size for three semiconductor devices suitable for medium voltage (2.4 kV, 3.3 kV and 6.6 kV) high power applications is presented. The comparison is made for medium voltage PWM current source rectifiers using a selective harmonic elimination technique. The devices compared are High Voltage Insulated Gate Bipolar Transistor (HVIGBT) and two types of hard-driven thyristors, namely, the Symmetrical Gate Commutated Thyristor (SGCT) and the Asymmetrical Gate Commutated Thyristor (AGCT). The study depends on practical devices, data sheets from well known semiconductor vendors, taking into account accurate discrimination between turn-off and recovery states.
KW - Current source rectifiers
KW - Losses calculations
KW - Medium voltage and semiconductors
UR - http://www.scopus.com/inward/record.url?scp=51849105989&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=51849105989&partnerID=8YFLogxK
U2 - 10.1109/SPEEDHAM.2008.4581134
DO - 10.1109/SPEEDHAM.2008.4581134
M3 - Conference contribution
SN - 9781424416646
SP - 1356
EP - 1362
BT - SPEEDAM 2008 - International Symposium on Power Electronics, Electrical Drives, Automation and Motion
ER -