Losses calculation for medium voltage PWM current source rectifiers using different semiconductor devices

Ahmed K. Abdelsalam; Mahmoud I. Masoud; Stephen J. Finney; Barry W. Williams

doi:10.1109/SPEEDHAM.2008.4581134

Losses calculation for medium voltage PWM current source rectifiers using different semiconductor devices

Ahmed K. Abdelsalam, Mahmoud I. Masoud, Stephen J. Finney, Barry W. Williams

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this paper, a comparison of losses and size for three semiconductor devices suitable for medium voltage (2.4 kV, 3.3 kV and 6.6 kV) high power applications is presented. The comparison is made for medium voltage PWM current source rectifiers using a selective harmonic elimination technique. The devices compared are High Voltage Insulated Gate Bipolar Transistor (HVIGBT) and two types of hard-driven thyristors, namely, the Symmetrical Gate Commutated Thyristor (SGCT) and the Asymmetrical Gate Commutated Thyristor (AGCT). The study depends on practical devices, data sheets from well known semiconductor vendors, taking into account accurate discrimination between turn-off and recovery states.

Original language	English
Title of host publication	SPEEDAM 2008 - International Symposium on Power Electronics, Electrical Drives, Automation and Motion
Pages	1356-1362
Number of pages	7
DOIs	https://doi.org/10.1109/SPEEDHAM.2008.4581134
Publication status	Published - 2008
Event	SPEEDAM 2008 - International Symposium on Power Electronics, Electrical Drives, Automation and Motion - Ischia, Italy Duration: Jun 11 2008 → Jun 13 2008

Other

Other	SPEEDAM 2008 - International Symposium on Power Electronics, Electrical Drives, Automation and Motion
Country/Territory	Italy
City	Ischia
Period	6/11/08 → 6/13/08

Keywords

Current source rectifiers
Losses calculations
Medium voltage and semiconductors

ASJC Scopus subject areas

Software
Electrical and Electronic Engineering

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10.1109/SPEEDHAM.2008.4581134

Cite this

Losses calculation for medium voltage PWM current source rectifiers using different semiconductor devices. / Abdelsalam, Ahmed K.; Masoud, Mahmoud I.; Finney, Stephen J.; Williams, Barry W.

SPEEDAM 2008 - International Symposium on Power Electronics, Electrical Drives, Automation and Motion. 2008. p. 1356-1362 4581134.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abdelsalam, AK, Masoud, MI, Finney, SJ & Williams, BW 2008, Losses calculation for medium voltage PWM current source rectifiers using different semiconductor devices. in SPEEDAM 2008 - International Symposium on Power Electronics, Electrical Drives, Automation and Motion., 4581134, pp. 1356-1362, SPEEDAM 2008 - International Symposium on Power Electronics, Electrical Drives, Automation and Motion, Ischia, Italy, 6/11/08. https://doi.org/10.1109/SPEEDHAM.2008.4581134

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abstract = "In this paper, a comparison of losses and size for three semiconductor devices suitable for medium voltage (2.4 kV, 3.3 kV and 6.6 kV) high power applications is presented. The comparison is made for medium voltage PWM current source rectifiers using a selective harmonic elimination technique. The devices compared are High Voltage Insulated Gate Bipolar Transistor (HVIGBT) and two types of hard-driven thyristors, namely, the Symmetrical Gate Commutated Thyristor (SGCT) and the Asymmetrical Gate Commutated Thyristor (AGCT). The study depends on practical devices, data sheets from well known semiconductor vendors, taking into account accurate discrimination between turn-off and recovery states.",

keywords = "Current source rectifiers, Losses calculations, Medium voltage and semiconductors",

author = "Abdelsalam, {Ahmed K.} and Masoud, {Mahmoud I.} and Finney, {Stephen J.} and Williams, {Barry W.}",

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AU - Abdelsalam, Ahmed K.

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N2 - In this paper, a comparison of losses and size for three semiconductor devices suitable for medium voltage (2.4 kV, 3.3 kV and 6.6 kV) high power applications is presented. The comparison is made for medium voltage PWM current source rectifiers using a selective harmonic elimination technique. The devices compared are High Voltage Insulated Gate Bipolar Transistor (HVIGBT) and two types of hard-driven thyristors, namely, the Symmetrical Gate Commutated Thyristor (SGCT) and the Asymmetrical Gate Commutated Thyristor (AGCT). The study depends on practical devices, data sheets from well known semiconductor vendors, taking into account accurate discrimination between turn-off and recovery states.

AB - In this paper, a comparison of losses and size for three semiconductor devices suitable for medium voltage (2.4 kV, 3.3 kV and 6.6 kV) high power applications is presented. The comparison is made for medium voltage PWM current source rectifiers using a selective harmonic elimination technique. The devices compared are High Voltage Insulated Gate Bipolar Transistor (HVIGBT) and two types of hard-driven thyristors, namely, the Symmetrical Gate Commutated Thyristor (SGCT) and the Asymmetrical Gate Commutated Thyristor (AGCT). The study depends on practical devices, data sheets from well known semiconductor vendors, taking into account accurate discrimination between turn-off and recovery states.

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KW - Losses calculations

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Losses calculation for medium voltage PWM current source rectifiers using different semiconductor devices

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