Investigation of the effects of gamma radiation on the electrical properties of dilute GaAs1-xNx layers grown by Molecular Beam Epitaxy

N. Al Saqri; J. F. Felix; M. Aziz; D. Jameel; C. I.L. De Araujo; H. Albalawi; F. Al Mashary; H. Alghamdi; D. Taylor; M. Henini

doi:10.1016/j.cap.2015.07.010

Investigation of the effects of gamma radiation on the electrical properties of dilute GaAs_1-xN_x layers grown by Molecular Beam Epitaxy

N. Al Saqri, J. F. Felix, M. Aziz, D. Jameel, C. I.L. De Araujo, H. Albalawi, F. Al Mashary, H. Alghamdi, D. Taylor, M. Henini^*

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

This work reports the effect of gamma (γ-) irradiation on dilute GaAsN with nitrogen concentrations ranging from 0.2 to 1.2% with post-irradiation stability using Current-Voltage (I-V) and Deep Level Transient Spectroscopy (DLTS) measurements in the temperature range from 10 K to 450 K. The I-V results indicate that the irradiation effect was more pronounced in the samples with nitrogen concentration of 0.4%. Additionally, the irradiated samples showed an ideality factor higher than the as-grown samples. On the other hand, for temperatures above 265 K the barrier height of the irradiated samples with 0.8% nitrogen is higher than the as-grown samples. The DLTS measurements revealed that after irradiation the number of traps either decreased remained constant, or new traps are created depending on the concentration of nitrogen. For samples with N = 0.2% - 0.4% the number of traps after irradiation decreased, whereas for samples with N = 0.8% - 1.2 % the number of traps remained the same. However, the properties of some traps such as capture cross-sections and density increased by about 2 orders of magnitude. The origin of the defects present before and after irradiation are discussed and correlated.

Original language	English
Pages (from-to)	1230-1237
Number of pages	8
Journal	Current Applied Physics
Volume	15
Issue number	10
DOIs	https://doi.org/10.1016/j.cap.2015.07.010
Publication status	Published - Oct 4 2015

Keywords

DLTS
Dilute III-V nitride
Gamma (γ-) irradiation
IV
Laplace DLTS

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

Access to Document

10.1016/j.cap.2015.07.010

Cite this

Al Saqri, N., Felix, J. F., Aziz, M., Jameel, D., De Araujo, C. I. L., Albalawi, H., Al Mashary, F., Alghamdi, H., Taylor, D., & Henini, M. (2015). Investigation of the effects of gamma radiation on the electrical properties of dilute GaAs_1-xN_x layers grown by Molecular Beam Epitaxy. Current Applied Physics, 15(10), 1230-1237. https://doi.org/10.1016/j.cap.2015.07.010

@article{9ed943a42d284ba7b90bf3f6175c782d,

title = "Investigation of the effects of gamma radiation on the electrical properties of dilute GaAs1-xNx layers grown by Molecular Beam Epitaxy",

abstract = "This work reports the effect of gamma (γ-) irradiation on dilute GaAsN with nitrogen concentrations ranging from 0.2 to 1.2% with post-irradiation stability using Current-Voltage (I-V) and Deep Level Transient Spectroscopy (DLTS) measurements in the temperature range from 10 K to 450 K. The I-V results indicate that the irradiation effect was more pronounced in the samples with nitrogen concentration of 0.4%. Additionally, the irradiated samples showed an ideality factor higher than the as-grown samples. On the other hand, for temperatures above 265 K the barrier height of the irradiated samples with 0.8% nitrogen is higher than the as-grown samples. The DLTS measurements revealed that after irradiation the number of traps either decreased remained constant, or new traps are created depending on the concentration of nitrogen. For samples with N = 0.2% - 0.4% the number of traps after irradiation decreased, whereas for samples with N = 0.8% - 1.2 % the number of traps remained the same. However, the properties of some traps such as capture cross-sections and density increased by about 2 orders of magnitude. The origin of the defects present before and after irradiation are discussed and correlated.",

keywords = "DLTS, Dilute III-V nitride, Gamma (γ-) irradiation, IV, Laplace DLTS",

author = "{Al Saqri}, N. and Felix, {J. F.} and M. Aziz and D. Jameel and {De Araujo}, {C. I.L.} and H. Albalawi and {Al Mashary}, F. and H. Alghamdi and D. Taylor and M. Henini",

note = "Funding Information: The author would like to acknowledge support from Sultan Qaboos University, Oman for providing scholarship for her PhD degree. Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

year = "2015",

month = oct,

day = "4",

doi = "10.1016/j.cap.2015.07.010",

language = "English",

volume = "15",

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T1 - Investigation of the effects of gamma radiation on the electrical properties of dilute GaAs1-xNx layers grown by Molecular Beam Epitaxy

AU - Al Saqri, N.

AU - Felix, J. F.

AU - Aziz, M.

AU - Jameel, D.

AU - De Araujo, C. I.L.

AU - Albalawi, H.

AU - Al Mashary, F.

AU - Alghamdi, H.

AU - Taylor, D.

AU - Henini, M.

N1 - Funding Information: The author would like to acknowledge support from Sultan Qaboos University, Oman for providing scholarship for her PhD degree. Publisher Copyright: © 2015 Elsevier B.V. All rights reserved.

PY - 2015/10/4

Y1 - 2015/10/4

N2 - This work reports the effect of gamma (γ-) irradiation on dilute GaAsN with nitrogen concentrations ranging from 0.2 to 1.2% with post-irradiation stability using Current-Voltage (I-V) and Deep Level Transient Spectroscopy (DLTS) measurements in the temperature range from 10 K to 450 K. The I-V results indicate that the irradiation effect was more pronounced in the samples with nitrogen concentration of 0.4%. Additionally, the irradiated samples showed an ideality factor higher than the as-grown samples. On the other hand, for temperatures above 265 K the barrier height of the irradiated samples with 0.8% nitrogen is higher than the as-grown samples. The DLTS measurements revealed that after irradiation the number of traps either decreased remained constant, or new traps are created depending on the concentration of nitrogen. For samples with N = 0.2% - 0.4% the number of traps after irradiation decreased, whereas for samples with N = 0.8% - 1.2 % the number of traps remained the same. However, the properties of some traps such as capture cross-sections and density increased by about 2 orders of magnitude. The origin of the defects present before and after irradiation are discussed and correlated.

AB - This work reports the effect of gamma (γ-) irradiation on dilute GaAsN with nitrogen concentrations ranging from 0.2 to 1.2% with post-irradiation stability using Current-Voltage (I-V) and Deep Level Transient Spectroscopy (DLTS) measurements in the temperature range from 10 K to 450 K. The I-V results indicate that the irradiation effect was more pronounced in the samples with nitrogen concentration of 0.4%. Additionally, the irradiated samples showed an ideality factor higher than the as-grown samples. On the other hand, for temperatures above 265 K the barrier height of the irradiated samples with 0.8% nitrogen is higher than the as-grown samples. The DLTS measurements revealed that after irradiation the number of traps either decreased remained constant, or new traps are created depending on the concentration of nitrogen. For samples with N = 0.2% - 0.4% the number of traps after irradiation decreased, whereas for samples with N = 0.8% - 1.2 % the number of traps remained the same. However, the properties of some traps such as capture cross-sections and density increased by about 2 orders of magnitude. The origin of the defects present before and after irradiation are discussed and correlated.

KW - DLTS

KW - Dilute III-V nitride

KW - Gamma (γ-) irradiation

KW - IV

KW - Laplace DLTS

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