Abstract
This work reports the effect of gamma (γ-) irradiation on dilute GaAsN with nitrogen concentrations ranging from 0.2 to 1.2% with post-irradiation stability using Current-Voltage (I-V) and Deep Level Transient Spectroscopy (DLTS) measurements in the temperature range from 10 K to 450 K. The I-V results indicate that the irradiation effect was more pronounced in the samples with nitrogen concentration of 0.4%. Additionally, the irradiated samples showed an ideality factor higher than the as-grown samples. On the other hand, for temperatures above 265 K the barrier height of the irradiated samples with 0.8% nitrogen is higher than the as-grown samples. The DLTS measurements revealed that after irradiation the number of traps either decreased remained constant, or new traps are created depending on the concentration of nitrogen. For samples with N = 0.2% - 0.4% the number of traps after irradiation decreased, whereas for samples with N = 0.8% - 1.2 % the number of traps remained the same. However, the properties of some traps such as capture cross-sections and density increased by about 2 orders of magnitude. The origin of the defects present before and after irradiation are discussed and correlated.
| Original language | English |
|---|---|
| Pages (from-to) | 1230-1237 |
| Number of pages | 8 |
| Journal | Current Applied Physics |
| Volume | 15 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - Oct 4 2015 |
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Keywords
- Dilute III-V nitride
- DLTS
- Gamma (γ-) irradiation
- IV
- Laplace DLTS
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
Cite this
Investigation of the effects of gamma radiation on the electrical properties of dilute GaAs1-xNx layers grown by Molecular Beam Epitaxy. / Al Saqri, N.; Felix, J. F.; Aziz, M.; Jameel, D.; De Araujo, C. I.L.; Albalawi, H.; Al Mashary, F.; Alghamdi, H.; Taylor, D.; Henini, M.
In: Current Applied Physics, Vol. 15, No. 10, 04.10.2015, p. 1230-1237.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Investigation of the effects of gamma radiation on the electrical properties of dilute GaAs1-xNx layers grown by Molecular Beam Epitaxy
AU - Al Saqri, N.
AU - Felix, J. F.
AU - Aziz, M.
AU - Jameel, D.
AU - De Araujo, C. I.L.
AU - Albalawi, H.
AU - Al Mashary, F.
AU - Alghamdi, H.
AU - Taylor, D.
AU - Henini, M.
PY - 2015/10/4
Y1 - 2015/10/4
N2 - This work reports the effect of gamma (γ-) irradiation on dilute GaAsN with nitrogen concentrations ranging from 0.2 to 1.2% with post-irradiation stability using Current-Voltage (I-V) and Deep Level Transient Spectroscopy (DLTS) measurements in the temperature range from 10 K to 450 K. The I-V results indicate that the irradiation effect was more pronounced in the samples with nitrogen concentration of 0.4%. Additionally, the irradiated samples showed an ideality factor higher than the as-grown samples. On the other hand, for temperatures above 265 K the barrier height of the irradiated samples with 0.8% nitrogen is higher than the as-grown samples. The DLTS measurements revealed that after irradiation the number of traps either decreased remained constant, or new traps are created depending on the concentration of nitrogen. For samples with N = 0.2% - 0.4% the number of traps after irradiation decreased, whereas for samples with N = 0.8% - 1.2 % the number of traps remained the same. However, the properties of some traps such as capture cross-sections and density increased by about 2 orders of magnitude. The origin of the defects present before and after irradiation are discussed and correlated.
AB - This work reports the effect of gamma (γ-) irradiation on dilute GaAsN with nitrogen concentrations ranging from 0.2 to 1.2% with post-irradiation stability using Current-Voltage (I-V) and Deep Level Transient Spectroscopy (DLTS) measurements in the temperature range from 10 K to 450 K. The I-V results indicate that the irradiation effect was more pronounced in the samples with nitrogen concentration of 0.4%. Additionally, the irradiated samples showed an ideality factor higher than the as-grown samples. On the other hand, for temperatures above 265 K the barrier height of the irradiated samples with 0.8% nitrogen is higher than the as-grown samples. The DLTS measurements revealed that after irradiation the number of traps either decreased remained constant, or new traps are created depending on the concentration of nitrogen. For samples with N = 0.2% - 0.4% the number of traps after irradiation decreased, whereas for samples with N = 0.8% - 1.2 % the number of traps remained the same. However, the properties of some traps such as capture cross-sections and density increased by about 2 orders of magnitude. The origin of the defects present before and after irradiation are discussed and correlated.
KW - Dilute III-V nitride
KW - DLTS
KW - Gamma (γ-) irradiation
KW - IV
KW - Laplace DLTS
UR - http://www.scopus.com/inward/record.url?scp=84940786440&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84940786440&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2015.07.010
DO - 10.1016/j.cap.2015.07.010
M3 - Article
AN - SCOPUS:84940786440
VL - 15
SP - 1230
EP - 1237
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 10
ER -