Investigation of the effects of GaAs substrate orientations on the electrical properties of sulfonated polyaniline based heterostructures

Dler Adil Jameel, John Fredy Ricardo Marroquin, Mohsin Aziz, Noor Alhuda Al Saqri, Inshad Jum'h, Ahmad Telfah, Mohamed Henini, Jorlandio Francisco Felix*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In this work we present a detailed study of the influence of the GaAs substrate orientation on the electrical properties of heterojunctions based on GaAs and sulfonated polyaniline (SPAN) using Current-Voltage (I-V), Capacitance-Voltage (C-V), Deep-Level Transient Spectroscopy (DLTS) and Laplace DLTS techniques. Three different GaAs substrate orientations have been investigated, namely (1 0 0), (3 1 1)A and (3 1 1)B. The I-V results revealed that the turn-on voltage (Von) of SPAN/(3 1 1)B GaAs heterojunction is higher than that for SPAN/(1 0 0) GaAs and SPAN/(3 1 1)A GaAs heterojunctions. The DLTS results showed that the number of electrically active defects present in devices based on the lower index (1 0 0) plane of GaAs substrate is higher than those of higher index (3 1 1)A and (3 1 1)B GaAs substrates, corroborating with I-V results. In order to investigate the role of interface states, capacitance-frequency measurements were performed in forward bias on all three devices.

Original languageEnglish
Article number144315
JournalApplied Surface Science
Volume504
DOIs
Publication statusPublished - Feb 28 2020

Keywords

  • (1 0 0) GaAs
  • (3 1 1)A GaAs
  • (3 1 1)B GaAs
  • C-V
  • DLTS
  • Hybrid device
  • I-V

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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