TY - JOUR
T1 - Investigation of the effects of GaAs substrate orientations on the electrical properties of sulfonated polyaniline based heterostructures
AU - Jameel, Dler Adil
AU - Marroquin, John Fredy Ricardo
AU - Aziz, Mohsin
AU - Al Saqri, Noor Alhuda
AU - Jum'h, Inshad
AU - Telfah, Ahmad
AU - Henini, Mohamed
AU - Felix, Jorlandio Francisco
N1 - Publisher Copyright:
© 2019 Elsevier B.V.
PY - 2020/2/28
Y1 - 2020/2/28
N2 - In this work we present a detailed study of the influence of the GaAs substrate orientation on the electrical properties of heterojunctions based on GaAs and sulfonated polyaniline (SPAN) using Current-Voltage (I-V), Capacitance-Voltage (C-V), Deep-Level Transient Spectroscopy (DLTS) and Laplace DLTS techniques. Three different GaAs substrate orientations have been investigated, namely (1 0 0), (3 1 1)A and (3 1 1)B. The I-V results revealed that the turn-on voltage (Von) of SPAN/(3 1 1)B GaAs heterojunction is higher than that for SPAN/(1 0 0) GaAs and SPAN/(3 1 1)A GaAs heterojunctions. The DLTS results showed that the number of electrically active defects present in devices based on the lower index (1 0 0) plane of GaAs substrate is higher than those of higher index (3 1 1)A and (3 1 1)B GaAs substrates, corroborating with I-V results. In order to investigate the role of interface states, capacitance-frequency measurements were performed in forward bias on all three devices.
AB - In this work we present a detailed study of the influence of the GaAs substrate orientation on the electrical properties of heterojunctions based on GaAs and sulfonated polyaniline (SPAN) using Current-Voltage (I-V), Capacitance-Voltage (C-V), Deep-Level Transient Spectroscopy (DLTS) and Laplace DLTS techniques. Three different GaAs substrate orientations have been investigated, namely (1 0 0), (3 1 1)A and (3 1 1)B. The I-V results revealed that the turn-on voltage (Von) of SPAN/(3 1 1)B GaAs heterojunction is higher than that for SPAN/(1 0 0) GaAs and SPAN/(3 1 1)A GaAs heterojunctions. The DLTS results showed that the number of electrically active defects present in devices based on the lower index (1 0 0) plane of GaAs substrate is higher than those of higher index (3 1 1)A and (3 1 1)B GaAs substrates, corroborating with I-V results. In order to investigate the role of interface states, capacitance-frequency measurements were performed in forward bias on all three devices.
KW - (1 0 0) GaAs
KW - (3 1 1)A GaAs
KW - (3 1 1)B GaAs
KW - C-V
KW - DLTS
KW - Hybrid device
KW - I-V
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U2 - 10.1016/j.apsusc.2019.144315
DO - 10.1016/j.apsusc.2019.144315
M3 - Article
AN - SCOPUS:85074536493
SN - 0169-4332
VL - 504
JO - Applied Surface Science
JF - Applied Surface Science
M1 - 144315
ER -