Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique

Noor Alhuda Al Saqri, Jorlandio F. Felix, Mohsin Aziz, Vasyl P. Kunets, Dler Jameel, David Taylor, Mohamed Henini, Mahmmoud S. Abd El-Sadek, Colin Furrow, Morgan E. Ware, Mourad Benamara, Mansour Mortazavi, Gregory Salamo

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

InGaAs quantum wire (QWr) intermediate-band solar cell-based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current-voltage (I-V) and capacitance-voltage (C-V) techniques, were found to change with temperature over a wide range of 20-340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the traps detected in the QWr-doped devices are directly or indirectly related to the insertion of the Si δ-layer used to dope the wires. In addition, in the QWr-doped devices, the decrease of the solar conversion efficiencies at low temperatures and the associated decrease of the integrated external quantum efficiency through InGaAs could be attributed to detected traps E1QWR-D, E2QWR-D, and E3QWR-D with activation energies of 0.0037, 0.0053, and 0.041 eV, respectively.

Original languageEnglish
Article number045707
JournalNanotechnology
Volume28
Issue number4
DOIs
Publication statusPublished - Jan 27 2017

Fingerprint

Semiconductor quantum wires
Deep level transient spectroscopy
Solar cells
Defects
Hole traps
Electron traps
Electric potential
Quantum efficiency
Molecular beam epitaxy
Conversion efficiency
Nanostructures
Capacitance
Activation energy
Wire
Temperature

Keywords

  • C-V
  • defects
  • DLTS
  • IV
  • quantum wire intermediate-band solar cells

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique. / Al Saqri, Noor Alhuda; Felix, Jorlandio F.; Aziz, Mohsin; Kunets, Vasyl P.; Jameel, Dler; Taylor, David; Henini, Mohamed; Abd El-Sadek, Mahmmoud S.; Furrow, Colin; Ware, Morgan E.; Benamara, Mourad; Mortazavi, Mansour; Salamo, Gregory.

In: Nanotechnology, Vol. 28, No. 4, 045707, 27.01.2017.

Research output: Contribution to journalArticle

Al Saqri, NA, Felix, JF, Aziz, M, Kunets, VP, Jameel, D, Taylor, D, Henini, M, Abd El-Sadek, MS, Furrow, C, Ware, ME, Benamara, M, Mortazavi, M & Salamo, G 2017, 'Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique', Nanotechnology, vol. 28, no. 4, 045707. https://doi.org/10.1088/1361-6528/28/4/045707
Al Saqri, Noor Alhuda ; Felix, Jorlandio F. ; Aziz, Mohsin ; Kunets, Vasyl P. ; Jameel, Dler ; Taylor, David ; Henini, Mohamed ; Abd El-Sadek, Mahmmoud S. ; Furrow, Colin ; Ware, Morgan E. ; Benamara, Mourad ; Mortazavi, Mansour ; Salamo, Gregory. / Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique. In: Nanotechnology. 2017 ; Vol. 28, No. 4.
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