Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique

Noor Alhuda Al Saqri; Jorlandio F. Felix; Mohsin Aziz; Vasyl P. Kunets; Dler Jameel; David Taylor; Mohamed Henini; Mahmmoud S. Abd El-Sadek; Colin Furrow; Morgan E. Ware; Mourad Benamara; Mansour Mortazavi; Gregory Salamo

doi:10.1088/1361-6528/28/4/045707

Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique

Noor Alhuda Al Saqri, Jorlandio F. Felix, Mohsin Aziz, Vasyl P. Kunets, Dler Jameel, David Taylor, Mohamed Henini, Mahmmoud S. Abd El-Sadek, Colin Furrow, Morgan E. Ware, Mourad Benamara, Mansour Mortazavi, Gregory Salamo

Physics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

InGaAs quantum wire (QWr) intermediate-band solar cell-based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current-voltage (I-V) and capacitance-voltage (C-V) techniques, were found to change with temperature over a wide range of 20-340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the traps detected in the QWr-doped devices are directly or indirectly related to the insertion of the Si δ-layer used to dope the wires. In addition, in the QWr-doped devices, the decrease of the solar conversion efficiencies at low temperatures and the associated decrease of the integrated external quantum efficiency through InGaAs could be attributed to detected traps E1_QWR-D, E2_QWR-D, and E3_QWR-D with activation energies of 0.0037, 0.0053, and 0.041 eV, respectively.

Original language	English
Article number	045707
Journal	Nanotechnology
Volume	28
Issue number	4
DOIs	https://doi.org/10.1088/1361-6528/28/4/045707
Publication status	Published - Jan 27 2017

Keywords

C-V
DLTS
IV
defects
quantum wire intermediate-band solar cells

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1088/1361-6528/28/4/045707

Cite this

Al Saqri, N. A., Felix, J. F., Aziz, M., Kunets, V. P., Jameel, D., Taylor, D., Henini, M., Abd El-Sadek, M. S., Furrow, C., Ware, M. E., Benamara, M., Mortazavi, M., & Salamo, G. (2017). Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique. Nanotechnology, 28(4), [045707]. https://doi.org/10.1088/1361-6528/28/4/045707

Al Saqri, NA, Felix, JF, Aziz, M, Kunets, VP, Jameel, D, Taylor, D, Henini, M, Abd El-Sadek, MS, Furrow, C, Ware, ME, Benamara, M, Mortazavi, M & Salamo, G 2017, 'Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique', Nanotechnology, vol. 28, no. 4, 045707. https://doi.org/10.1088/1361-6528/28/4/045707

@article{7b5e3f14652b46739445cc5a1fc5b8da,

title = "Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique",

abstract = "InGaAs quantum wire (QWr) intermediate-band solar cell-based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current-voltage (I-V) and capacitance-voltage (C-V) techniques, were found to change with temperature over a wide range of 20-340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the traps detected in the QWr-doped devices are directly or indirectly related to the insertion of the Si δ-layer used to dope the wires. In addition, in the QWr-doped devices, the decrease of the solar conversion efficiencies at low temperatures and the associated decrease of the integrated external quantum efficiency through InGaAs could be attributed to detected traps E1QWR-D, E2QWR-D, and E3QWR-D with activation energies of 0.0037, 0.0053, and 0.041 eV, respectively.",

keywords = "C-V, DLTS, IV, defects, quantum wire intermediate-band solar cells",

author = "{Al Saqri}, {Noor Alhuda} and Felix, {Jorlandio F.} and Mohsin Aziz and Kunets, {Vasyl P.} and Dler Jameel and David Taylor and Mohamed Henini and {Abd El-Sadek}, {Mahmmoud S.} and Colin Furrow and Ware, {Morgan E.} and Mourad Benamara and Mansour Mortazavi and Gregory Salamo",

note = "Publisher Copyright: � 2016 IOP Publishing Ltd.",

year = "2017",

month = jan,

day = "27",

doi = "10.1088/1361-6528/28/4/045707",

language = "English",

volume = "28",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "4",

}

TY - JOUR

T1 - Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique

AU - Al Saqri, Noor Alhuda

AU - Felix, Jorlandio F.

AU - Aziz, Mohsin

AU - Kunets, Vasyl P.

AU - Jameel, Dler

AU - Taylor, David

AU - Henini, Mohamed

AU - Abd El-Sadek, Mahmmoud S.

AU - Furrow, Colin

AU - Ware, Morgan E.

AU - Benamara, Mourad

AU - Mortazavi, Mansour

AU - Salamo, Gregory

PY - 2017/1/27

Y1 - 2017/1/27

N2 - InGaAs quantum wire (QWr) intermediate-band solar cell-based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current-voltage (I-V) and capacitance-voltage (C-V) techniques, were found to change with temperature over a wide range of 20-340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the traps detected in the QWr-doped devices are directly or indirectly related to the insertion of the Si δ-layer used to dope the wires. In addition, in the QWr-doped devices, the decrease of the solar conversion efficiencies at low temperatures and the associated decrease of the integrated external quantum efficiency through InGaAs could be attributed to detected traps E1QWR-D, E2QWR-D, and E3QWR-D with activation energies of 0.0037, 0.0053, and 0.041 eV, respectively.

AB - InGaAs quantum wire (QWr) intermediate-band solar cell-based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current-voltage (I-V) and capacitance-voltage (C-V) techniques, were found to change with temperature over a wide range of 20-340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the traps detected in the QWr-doped devices are directly or indirectly related to the insertion of the Si δ-layer used to dope the wires. In addition, in the QWr-doped devices, the decrease of the solar conversion efficiencies at low temperatures and the associated decrease of the integrated external quantum efficiency through InGaAs could be attributed to detected traps E1QWR-D, E2QWR-D, and E3QWR-D with activation energies of 0.0037, 0.0053, and 0.041 eV, respectively.

KW - C-V

KW - DLTS

KW - IV

KW - defects

KW - quantum wire intermediate-band solar cells

UR - http://www.scopus.com/inward/record.url?scp=85007453893&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85007453893&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/28/4/045707

DO - 10.1088/1361-6528/28/4/045707

M3 - Article

AN - SCOPUS:85007453893

SN - 0957-4484

VL - 28

JO - Nanotechnology

JF - Nanotechnology

IS - 4

M1 - 045707

ER -

Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this