Influence of anisotropic strain relaxation on the magnetoresistance properties of epitaxial Fe3O4 (110) films

R. G S Sofin, Han Chun Wu, R. Ramos, S. K. Arora, I. V. Shvets

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Abstract

We studied Fe3O4 (110) films grown epitaxially on MgO (110) substrates using oxygen plasma assisted molecular beam epitaxy. The films with thickness of 30-200 nm showed anisotropic in-plane partial strain relaxation. Magneto resistance (MR) measurements with current and magnetic field along 〈001〉 direction showed higher MR compared to 〈1¯10〉 direction. Maximum value of MR was measured at Verwey transition temperature for both directions. We explain the observed anisotropy in the MR on the basis of the effects of anisotropic misfit strain, and the difference between the density of antiferromagnetically coupled antiphase boundaries formed along 〈001〉 and 〈1¯10〉 crystallographic directions, suggesting the dependence of spin polarisation on the anisotropic strain relaxation along the said crystallographic directions.

Original languageEnglish
Article number173903
JournalJournal of Applied Physics
Volume118
Issue number17
DOIs
Publication statusPublished - Nov 7 2015

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antiphase boundaries
oxygen plasma
molecular beam epitaxy
transition temperature
anisotropy
polarization
magnetic fields

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Influence of anisotropic strain relaxation on the magnetoresistance properties of epitaxial Fe3O4 (110) films. / Sofin, R. G S; Wu, Han Chun; Ramos, R.; Arora, S. K.; Shvets, I. V.

In: Journal of Applied Physics, Vol. 118, No. 17, 173903, 07.11.2015.

Research output: Contribution to journalArticle

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