Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region

A. Zarea; A. Sellai; M. S. Raven; D. P. Steenson; J. M. Chamberlain; M. Henini; O. H. Hughes

Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region

A. Zarea^*, A. Sellai, M. S. Raven, D. P. Steenson, J. M. Chamberlain, M. Henini, O. H. Hughes

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, R₃, C and L associated with the destructure.

Original language	English
Pages (from-to)	1522-1523
Number of pages	2
Journal	Electronics Letters
Volume	26
Issue number	18
Publication status	Published - Jan 1 1990

ASJC Scopus subject areas

Electrical and Electronic Engineering

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title = "Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region",

abstract = "The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, R3, C and L associated with the destructure.",

author = "A. Zarea and A. Sellai and Raven, {M. S.} and Steenson, {D. P.} and Chamberlain, {J. M.} and M. Henini and Hughes, {O. H.}",

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T1 - Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region

AU - Zarea, A.

AU - Sellai, A.

AU - Raven, M. S.

AU - Steenson, D. P.

AU - Chamberlain, J. M.

AU - Henini, M.

AU - Hughes, O. H.

PY - 1990/1/1

Y1 - 1990/1/1

N2 - The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, R3, C and L associated with the destructure.

AB - The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, R3, C and L associated with the destructure.

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AN - SCOPUS:0025468609

VL - 26

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EP - 1523

JO - Electronics Letters

JF - Electronics Letters

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