Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region

A. Zarea; A. Sellai; M. S. Raven; D. P. Steenson; J. M. Chamberlain; M. Henini; O. H. Hughes

Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region

A. Zarea, A. Sellai, M. S. Raven, D. P. Steenson, J. M. Chamberlain, M. Henini, O. H. Hughes

Physics

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, R₃, C and L associated with the destructure.

Original language	English
Pages (from-to)	1522-1523
Number of pages	2
Journal	Electronics Letters
Volume	26
Issue number	18
Publication status	Published - Jan 1 1990

Fingerprint

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Zarea, A., Sellai, A., Raven, M. S., Steenson, D. P., Chamberlain, J. M., Henini, M., & Hughes, O. H. (1990). Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region. Electronics Letters, 26(18), 1522-1523.

@article{81f1ebf2cb914c839807df23b8c445fd,

title = "Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region",

abstract = "The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, R3, C and L associated with the destructure.",

author = "A. Zarea and A. Sellai and Raven, {M. S.} and Steenson, {D. P.} and Chamberlain, {J. M.} and M. Henini and Hughes, {O. H.}",

year = "1990",

month = "1",

day = "1",

language = "English",

volume = "26",

pages = "1522--1523",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "18",

}

TY - JOUR

T1 - Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region

AU - Zarea, A.

AU - Sellai, A.

AU - Raven, M. S.

AU - Steenson, D. P.

AU - Chamberlain, J. M.

AU - Henini, M.

AU - Hughes, O. H.

PY - 1990/1/1

Y1 - 1990/1/1

N2 - The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, R3, C and L associated with the destructure.

AB - The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, R3, C and L associated with the destructure.

UR - http://www.scopus.com/inward/record.url?scp=0025468609&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025468609&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0025468609

VL - 26

SP - 1522

EP - 1523

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 18

ER -

Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region

Abstract

Fingerprint

ASJC Scopus subject areas

Cite this

Access to Document