Abstract
The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, R3, C and L associated with the destructure.
| Original language | English |
|---|---|
| Pages (from-to) | 1522-1523 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 26 |
| Issue number | 18 |
| Publication status | Published - Jan 1 1990 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region. / Zarea, A.; Sellai, A.; Raven, M. S.; Steenson, D. P.; Chamberlain, J. M.; Henini, M.; Hughes, O. H.
In: Electronics Letters, Vol. 26, No. 18, 01.01.1990, p. 1522-1523.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region
AU - Zarea, A.
AU - Sellai, A.
AU - Raven, M. S.
AU - Steenson, D. P.
AU - Chamberlain, J. M.
AU - Henini, M.
AU - Hughes, O. H.
PY - 1990/1/1
Y1 - 1990/1/1
N2 - The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, R3, C and L associated with the destructure.
AB - The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, R3, C and L associated with the destructure.
UR - http://www.scopus.com/inward/record.url?scp=0025468609&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0025468609&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0025468609
VL - 26
SP - 1522
EP - 1523
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 18
ER -