The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, R3, C and L associated with the destructure.
|Number of pages||2|
|Publication status||Published - Jan 1 1990|
ASJC Scopus subject areas
- Electrical and Electronic Engineering