Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region

A. Zarea, A. Sellai, M. S. Raven, D. P. Steenson, J. M. Chamberlain, M. Henini, O. H. Hughes

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, R3, C and L associated with the destructure.

Original languageEnglish
Pages (from-to)1522-1523
Number of pages2
JournalElectronics Letters
Volume26
Issue number18
Publication statusPublished - Jan 1 1990

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Tunnel diodes
Cutoff frequency
Equivalent circuits
Natural frequencies

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Zarea, A., Sellai, A., Raven, M. S., Steenson, D. P., Chamberlain, J. M., Henini, M., & Hughes, O. H. (1990). Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region. Electronics Letters, 26(18), 1522-1523.

Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region. / Zarea, A.; Sellai, A.; Raven, M. S.; Steenson, D. P.; Chamberlain, J. M.; Henini, M.; Hughes, O. H.

In: Electronics Letters, Vol. 26, No. 18, 01.01.1990, p. 1522-1523.

Research output: Contribution to journalArticle

Zarea, A, Sellai, A, Raven, MS, Steenson, DP, Chamberlain, JM, Henini, M & Hughes, OH 1990, 'Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region', Electronics Letters, vol. 26, no. 18, pp. 1522-1523.
Zarea A, Sellai A, Raven MS, Steenson DP, Chamberlain JM, Henini M et al. Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region. Electronics Letters. 1990 Jan 1;26(18):1522-1523.
Zarea, A. ; Sellai, A. ; Raven, M. S. ; Steenson, D. P. ; Chamberlain, J. M. ; Henini, M. ; Hughes, O. H. / Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region. In: Electronics Letters. 1990 ; Vol. 26, No. 18. pp. 1522-1523.
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