Abstract
The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, R3, C and L associated with the destructure.
Original language | English |
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Pages (from-to) | 1522-1523 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 26 |
Issue number | 18 |
Publication status | Published - Jan 1 1990 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering