Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region

A. Zarea, A. Sellai, M. S. Raven, D. P. Steenson, J. M. Chamberlain, M. Henini, O. H. Hughes

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Abstract

The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, R3, C and L associated with the destructure.

Original languageEnglish
Pages (from-to)1522-1523
Number of pages2
JournalElectronics Letters
Volume26
Issue number18
Publication statusPublished - Jan 1 1990

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Zarea, A., Sellai, A., Raven, M. S., Steenson, D. P., Chamberlain, J. M., Henini, M., & Hughes, O. H. (1990). Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region. Electronics Letters, 26(18), 1522-1523.