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I-V-T measurements on GaAs/AlGaAs heterojunctions interpreted on the basis of thermally assisted tunneling
A. Sellai
*
, M. S. Raven, M. Henini
*
Corresponding author for this work
Physics
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peer-review
3
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Material Science
Gallium Arsenide
66%
Aluminium Gallium Arsenide
66%
Physics
Heterojunctions
100%