High speed in spin-torque-based magnetic memory using magnetic nanocontacts

Magnetization switching by a spin-polarized current in perpendicular anisotropy devices with magnetic nanocontact (NC) is investigated using a micromagnetic formalism. The critical switching current (i_cr) and switching time (τ₀) can be reduced when a soft layer is exchange coupled to the NC. The study reveals that devices with fewer NCs have smaller i_cr compared to those with a large number. Furthermore, τ₀ for nanoconstricted devices is almost constant with anisotropy field (H_k), in contrast to devices without NCs that show an exponential increase with H_k. This suggests that nanoconstricted devices could be used to improve thermal stability, while reducing i_cr and τ₀.