Geometrically pinned magnetic domain wall for multi-bit per cell storage memory

M. Al Bahri, R. Sbiaa

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Spintronic devices currently rely on magnetic switching or controlled motion of domain walls (DWs) by an external magnetic field or a spin-polarized current. Controlling the position of DW is essential for defining the state/information in a magnetic memory. During the process of nanowire fabrication, creating an off-set of two parts of the device could help to pin DW at a precise position. Micromagnetic simulation conducted on in-plane magnetic anisotropy materials shows the effectiveness of the proposed design for pinning DW at the nanoconstriction region. The critical current for moving DW from one state to the other is strongly dependent on nanoconstricted region (width and length) and the magnetic properties of the material. The DW speed which is essential for fast writing of the data could reach values in the range of hundreds m/s. Furthermore, evidence of multi-bit per cell memory is demonstrated via a magnetic nanowire with more than one constriction.

Original languageEnglish
Article number28590
JournalScientific Reports
Volume6
DOIs
Publication statusPublished - Jun 23 2016

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magnetic domains
domain wall
cells
nanowires
magnetic switching
magnetic storage
critical current
constrictions
magnetic properties
anisotropy
fabrication
magnetic fields
simulation

ASJC Scopus subject areas

  • General

Cite this

Geometrically pinned magnetic domain wall for multi-bit per cell storage memory. / Al Bahri, M.; Sbiaa, R.

In: Scientific Reports, Vol. 6, 28590, 23.06.2016.

Research output: Contribution to journalArticle

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