Gaussian distribution of inhomogeneous barrier height in tungsten/4H-SiC (000-1) Schottky diodes

S. Toumi, A. Ferhat-Hamida, L. Boussouar, A. Sellai, Z. Ouennoughi, H. Ryssel

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

The Gaussian distribution model have been used to analyze the anomalies observed in tungsten (W)/4H-SiC current voltage characteristics due to the barrier inhomogeneities that prevail at the metal-semiconductor interface. From the analysis of the forward I-V characteristics measured at elevated temperatures within the range of 303-448 K and by the assumption of a Gaussian distribution (GD) of barrier heights (BHs), a mean barrier height over(Φ, ̄)B 0 of 1.277 eV, a zero-bias standard deviation σ0 = 0.092 V and a factor T0 of 21.69 K have been obtained. Furthermore the modified Richardson plot according to the Gaussian distribution model resulted in a mean barrier height over(Φ, ̄)B 0 and a Richardson constant (A*) of 1.276 eV and 145 A/cm2 K2, respectively. The A* value obtained from this plot is in very close agreement with the theoretical value of 146 A/cm2 K2 for n-type 4H-SiC. Therefore, it has been concluded that the temperature dependence of the forward I-V characteristics of the W/4H-SiC contacts can be successfully explained on the basis of a thermionic emission conduction mechanism with Gaussian distributed barriers. In addition, a comparison is made between the present results and those obtained previously assuming the pinch-off model.

Original languageEnglish
Pages (from-to)303-309
Number of pages7
JournalMicroelectronic Engineering
Volume86
Issue number3
DOIs
Publication statusPublished - Mar 2009

Fingerprint

Tungsten
Gaussian distribution
Schottky diodes
normal density functions
tungsten
Diodes
Thermionic emission
Current voltage characteristics
plots
Metals
Semiconductor materials
thermionic emission
Temperature
standard deviation
inhomogeneity
anomalies
conduction
temperature dependence
electric potential
metals

Keywords

  • Electrical measurements
  • Inhomogeneity
  • Schottky barrier
  • Silicon carbide
  • Tungsten

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Gaussian distribution of inhomogeneous barrier height in tungsten/4H-SiC (000-1) Schottky diodes. / Toumi, S.; Ferhat-Hamida, A.; Boussouar, L.; Sellai, A.; Ouennoughi, Z.; Ryssel, H.

In: Microelectronic Engineering, Vol. 86, No. 3, 03.2009, p. 303-309.

Research output: Contribution to journalArticle

Toumi, S. ; Ferhat-Hamida, A. ; Boussouar, L. ; Sellai, A. ; Ouennoughi, Z. ; Ryssel, H. / Gaussian distribution of inhomogeneous barrier height in tungsten/4H-SiC (000-1) Schottky diodes. In: Microelectronic Engineering. 2009 ; Vol. 86, No. 3. pp. 303-309.
@article{11dd6a190d4b4c15822112a6c976f9fe,
title = "Gaussian distribution of inhomogeneous barrier height in tungsten/4H-SiC (000-1) Schottky diodes",
abstract = "The Gaussian distribution model have been used to analyze the anomalies observed in tungsten (W)/4H-SiC current voltage characteristics due to the barrier inhomogeneities that prevail at the metal-semiconductor interface. From the analysis of the forward I-V characteristics measured at elevated temperatures within the range of 303-448 K and by the assumption of a Gaussian distribution (GD) of barrier heights (BHs), a mean barrier height over(Φ, ̄)B 0 of 1.277 eV, a zero-bias standard deviation σ0 = 0.092 V and a factor T0 of 21.69 K have been obtained. Furthermore the modified Richardson plot according to the Gaussian distribution model resulted in a mean barrier height over(Φ, ̄)B 0 and a Richardson constant (A*) of 1.276 eV and 145 A/cm2 K2, respectively. The A* value obtained from this plot is in very close agreement with the theoretical value of 146 A/cm2 K2 for n-type 4H-SiC. Therefore, it has been concluded that the temperature dependence of the forward I-V characteristics of the W/4H-SiC contacts can be successfully explained on the basis of a thermionic emission conduction mechanism with Gaussian distributed barriers. In addition, a comparison is made between the present results and those obtained previously assuming the pinch-off model.",
keywords = "Electrical measurements, Inhomogeneity, Schottky barrier, Silicon carbide, Tungsten",
author = "S. Toumi and A. Ferhat-Hamida and L. Boussouar and A. Sellai and Z. Ouennoughi and H. Ryssel",
year = "2009",
month = "3",
doi = "10.1016/j.mee.2008.10.015",
language = "English",
volume = "86",
pages = "303--309",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "3",

}

TY - JOUR

T1 - Gaussian distribution of inhomogeneous barrier height in tungsten/4H-SiC (000-1) Schottky diodes

AU - Toumi, S.

AU - Ferhat-Hamida, A.

AU - Boussouar, L.

AU - Sellai, A.

AU - Ouennoughi, Z.

AU - Ryssel, H.

PY - 2009/3

Y1 - 2009/3

N2 - The Gaussian distribution model have been used to analyze the anomalies observed in tungsten (W)/4H-SiC current voltage characteristics due to the barrier inhomogeneities that prevail at the metal-semiconductor interface. From the analysis of the forward I-V characteristics measured at elevated temperatures within the range of 303-448 K and by the assumption of a Gaussian distribution (GD) of barrier heights (BHs), a mean barrier height over(Φ, ̄)B 0 of 1.277 eV, a zero-bias standard deviation σ0 = 0.092 V and a factor T0 of 21.69 K have been obtained. Furthermore the modified Richardson plot according to the Gaussian distribution model resulted in a mean barrier height over(Φ, ̄)B 0 and a Richardson constant (A*) of 1.276 eV and 145 A/cm2 K2, respectively. The A* value obtained from this plot is in very close agreement with the theoretical value of 146 A/cm2 K2 for n-type 4H-SiC. Therefore, it has been concluded that the temperature dependence of the forward I-V characteristics of the W/4H-SiC contacts can be successfully explained on the basis of a thermionic emission conduction mechanism with Gaussian distributed barriers. In addition, a comparison is made between the present results and those obtained previously assuming the pinch-off model.

AB - The Gaussian distribution model have been used to analyze the anomalies observed in tungsten (W)/4H-SiC current voltage characteristics due to the barrier inhomogeneities that prevail at the metal-semiconductor interface. From the analysis of the forward I-V characteristics measured at elevated temperatures within the range of 303-448 K and by the assumption of a Gaussian distribution (GD) of barrier heights (BHs), a mean barrier height over(Φ, ̄)B 0 of 1.277 eV, a zero-bias standard deviation σ0 = 0.092 V and a factor T0 of 21.69 K have been obtained. Furthermore the modified Richardson plot according to the Gaussian distribution model resulted in a mean barrier height over(Φ, ̄)B 0 and a Richardson constant (A*) of 1.276 eV and 145 A/cm2 K2, respectively. The A* value obtained from this plot is in very close agreement with the theoretical value of 146 A/cm2 K2 for n-type 4H-SiC. Therefore, it has been concluded that the temperature dependence of the forward I-V characteristics of the W/4H-SiC contacts can be successfully explained on the basis of a thermionic emission conduction mechanism with Gaussian distributed barriers. In addition, a comparison is made between the present results and those obtained previously assuming the pinch-off model.

KW - Electrical measurements

KW - Inhomogeneity

KW - Schottky barrier

KW - Silicon carbide

KW - Tungsten

UR - http://www.scopus.com/inward/record.url?scp=59349090576&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=59349090576&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2008.10.015

DO - 10.1016/j.mee.2008.10.015

M3 - Article

AN - SCOPUS:59349090576

VL - 86

SP - 303

EP - 309

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 3

ER -