Features of a tunnel diode oscillator at different temperatures

S. Al-Harthi; A. Sellai

doi:10.1016/j.mejo.2007.07.085

Features of a tunnel diode oscillator at different temperatures

S. Al-Harthi, A. Sellai^*

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Current-voltage measurements were performed on a tunnel diode (TD) and the basic features of the I-V characteristics were analyzed in the temperature range 100-300 K. Based on these characteristics, a TD-based oscillator is designed and simulated using circuit analysis software (PSpice). It is shown, in particular, that the amplitude and the frequency of the obtained sinusoidal waveforms can be practically temperature independent provided that the diode is adequately biased in its negative conductance region.

Original language	English
Pages (from-to)	817-822
Number of pages	6
Journal	Microelectronics Journal
Volume	38
Issue number	8-9
DOIs	https://doi.org/10.1016/j.mejo.2007.07.085
Publication status	Published - Aug 2007

Keywords

I-V-T characteristics
Oscillator
Spice simulation
Tunneling diode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mejo.2007.07.085

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@article{26140c9dd2c44116b4f05b607f8b87b5,

title = "Features of a tunnel diode oscillator at different temperatures",

abstract = "Current-voltage measurements were performed on a tunnel diode (TD) and the basic features of the I-V characteristics were analyzed in the temperature range 100-300 K. Based on these characteristics, a TD-based oscillator is designed and simulated using circuit analysis software (PSpice). It is shown, in particular, that the amplitude and the frequency of the obtained sinusoidal waveforms can be practically temperature independent provided that the diode is adequately biased in its negative conductance region.",

keywords = "I-V-T characteristics, Oscillator, Spice simulation, Tunneling diode",

author = "S. Al-Harthi and A. Sellai",

year = "2007",

month = aug,

doi = "10.1016/j.mejo.2007.07.085",

language = "English",

volume = "38",

pages = "817--822",

journal = "Microelectronics Journal",

issn = "0026-2692",

publisher = "Elsevier BV",

number = "8-9",

}

TY - JOUR

T1 - Features of a tunnel diode oscillator at different temperatures

AU - Al-Harthi, S.

AU - Sellai, A.

PY - 2007/8

Y1 - 2007/8

N2 - Current-voltage measurements were performed on a tunnel diode (TD) and the basic features of the I-V characteristics were analyzed in the temperature range 100-300 K. Based on these characteristics, a TD-based oscillator is designed and simulated using circuit analysis software (PSpice). It is shown, in particular, that the amplitude and the frequency of the obtained sinusoidal waveforms can be practically temperature independent provided that the diode is adequately biased in its negative conductance region.

AB - Current-voltage measurements were performed on a tunnel diode (TD) and the basic features of the I-V characteristics were analyzed in the temperature range 100-300 K. Based on these characteristics, a TD-based oscillator is designed and simulated using circuit analysis software (PSpice). It is shown, in particular, that the amplitude and the frequency of the obtained sinusoidal waveforms can be practically temperature independent provided that the diode is adequately biased in its negative conductance region.

KW - I-V-T characteristics

KW - Oscillator

KW - Spice simulation

KW - Tunneling diode

UR - http://www.scopus.com/inward/record.url?scp=34848924312&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34848924312&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2007.07.085

DO - 10.1016/j.mejo.2007.07.085

M3 - Article

AN - SCOPUS:34848924312

SN - 0026-2692

VL - 38

SP - 817

EP - 822

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 8-9

ER -

Features of a tunnel diode oscillator at different temperatures

Abstract

Keywords

ASJC Scopus subject areas

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