Features of a tunnel diode oscillator at different temperatures

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Current-voltage measurements were performed on a tunnel diode (TD) and the basic features of the I-V characteristics were analyzed in the temperature range 100-300 K. Based on these characteristics, a TD-based oscillator is designed and simulated using circuit analysis software (PSpice). It is shown, in particular, that the amplitude and the frequency of the obtained sinusoidal waveforms can be practically temperature independent provided that the diode is adequately biased in its negative conductance region.

Original languageEnglish
Pages (from-to)817-822
Number of pages6
JournalMicroelectronics Journal
Volume38
Issue number8-9
DOIs
Publication statusPublished - Aug 2007

Fingerprint

Tunnel diode oscillators
Tunnel diodes
tunnel diodes
negative conductance
oscillators
Voltage measurement
Electric current measurement
Electric network analysis
electrical measurement
waveforms
Diodes
diodes
computer programs
Temperature
temperature

Keywords

  • I-V-T characteristics
  • Oscillator
  • Spice simulation
  • Tunneling diode

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Features of a tunnel diode oscillator at different temperatures. / Al-Harthi, S.; Sellai, A.

In: Microelectronics Journal, Vol. 38, No. 8-9, 08.2007, p. 817-822.

Research output: Contribution to journalArticle

@article{26140c9dd2c44116b4f05b607f8b87b5,
title = "Features of a tunnel diode oscillator at different temperatures",
abstract = "Current-voltage measurements were performed on a tunnel diode (TD) and the basic features of the I-V characteristics were analyzed in the temperature range 100-300 K. Based on these characteristics, a TD-based oscillator is designed and simulated using circuit analysis software (PSpice). It is shown, in particular, that the amplitude and the frequency of the obtained sinusoidal waveforms can be practically temperature independent provided that the diode is adequately biased in its negative conductance region.",
keywords = "I-V-T characteristics, Oscillator, Spice simulation, Tunneling diode",
author = "S. Al-Harthi and A. Sellai",
year = "2007",
month = "8",
doi = "10.1016/j.mejo.2007.07.085",
language = "English",
volume = "38",
pages = "817--822",
journal = "Microelectronics Journal",
issn = "0959-8324",
publisher = "Elsevier BV",
number = "8-9",

}

TY - JOUR

T1 - Features of a tunnel diode oscillator at different temperatures

AU - Al-Harthi, S.

AU - Sellai, A.

PY - 2007/8

Y1 - 2007/8

N2 - Current-voltage measurements were performed on a tunnel diode (TD) and the basic features of the I-V characteristics were analyzed in the temperature range 100-300 K. Based on these characteristics, a TD-based oscillator is designed and simulated using circuit analysis software (PSpice). It is shown, in particular, that the amplitude and the frequency of the obtained sinusoidal waveforms can be practically temperature independent provided that the diode is adequately biased in its negative conductance region.

AB - Current-voltage measurements were performed on a tunnel diode (TD) and the basic features of the I-V characteristics were analyzed in the temperature range 100-300 K. Based on these characteristics, a TD-based oscillator is designed and simulated using circuit analysis software (PSpice). It is shown, in particular, that the amplitude and the frequency of the obtained sinusoidal waveforms can be practically temperature independent provided that the diode is adequately biased in its negative conductance region.

KW - I-V-T characteristics

KW - Oscillator

KW - Spice simulation

KW - Tunneling diode

UR - http://www.scopus.com/inward/record.url?scp=34848924312&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34848924312&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2007.07.085

DO - 10.1016/j.mejo.2007.07.085

M3 - Article

VL - 38

SP - 817

EP - 822

JO - Microelectronics Journal

JF - Microelectronics Journal

SN - 0959-8324

IS - 8-9

ER -