Fabrication of SiC microelectromechanical systems using one-step dry etching

Liudi Jiang, R. Cheung, M. Hassan, A. J. Harris, J. S. Burdess, C. A. Zorman, M. Mehregany

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

The development of an one-step dry etching method for fabricating silicon carbide (SiC) microelectromechanical systems was analyzed. The objective of the method was to fabricate suspended SiC cantlever and clamped bridge structures by inductively coupled plasma (ICP). The presence of tensile stress in bridge structures was observed with the help of measured resonant frequencies. But, the cantlever beams were found stress-free. The bridge length was unable to influence the degree of the tension in the bridge structures.

Original languageEnglish
Pages (from-to)2998-3001
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number6
Publication statusPublished - Nov 2003

Fingerprint

bridges (structures)
Dry etching
Silicon carbide
silicon carbides
microelectromechanical systems
MEMS
etching
Fabrication
fabrication
tensile stress
resonant frequencies
Inductively coupled plasma
Tensile stress
Natural frequencies

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Fabrication of SiC microelectromechanical systems using one-step dry etching. / Jiang, Liudi; Cheung, R.; Hassan, M.; Harris, A. J.; Burdess, J. S.; Zorman, C. A.; Mehregany, M.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 6, 11.2003, p. 2998-3001.

Research output: Contribution to journalArticle

Jiang, Liudi ; Cheung, R. ; Hassan, M. ; Harris, A. J. ; Burdess, J. S. ; Zorman, C. A. ; Mehregany, M. / Fabrication of SiC microelectromechanical systems using one-step dry etching. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2003 ; Vol. 21, No. 6. pp. 2998-3001.
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