Fabrication of SiC microelectromechanical systems using one-step dry etching

Liudi Jiang*, R. Cheung, M. Hassan, A. J. Harris, J. S. Burdess, C. A. Zorman, M. Mehregany

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)


The development of an one-step dry etching method for fabricating silicon carbide (SiC) microelectromechanical systems was analyzed. The objective of the method was to fabricate suspended SiC cantlever and clamped bridge structures by inductively coupled plasma (ICP). The presence of tensile stress in bridge structures was observed with the help of measured resonant frequencies. But, the cantlever beams were found stress-free. The bridge length was unable to influence the degree of the tension in the bridge structures.

Original languageEnglish
Pages (from-to)2998-3001
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
Publication statusPublished - 2003
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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