Fabrication of β-silicon carbide nanowires from carbon powder and silicon wafer

Majid S. Al-Ruqeishi; Tariq Mohiuddin

doi:10.21272/jnep.8(2).02001

Fabrication of β-silicon carbide nanowires from carbon powder and silicon wafer

Majid S. Al-Ruqeishi^*, Tariq Mohiuddin

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.

Original language	English
Article number	02001
Journal	Journal of Nano- and Electronic Physics
Volume	8
Issue number	2
DOIs	https://doi.org/10.21272/jnep.8(2).02001
Publication status	Published - 2016

Keywords

Carbo-thermal technique
Nano-optics
SiC nanowires

ASJC Scopus subject areas

Condensed Matter Physics
Radiation
Materials Science(all)

Access to Document

10.21272/jnep.8(2).02001

Fingerprint Dive into the research topics of 'Fabrication of β-silicon carbide nanowires from carbon powder and silicon wafer'. Together they form a unique fingerprint.

Cite this

@article{e7e78cf81a99436fa1b92cf789c95660,

title = "Fabrication of β-silicon carbide nanowires from carbon powder and silicon wafer",

abstract = "β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.",

keywords = "Carbo-thermal technique, Nano-optics, SiC nanowires",

author = "Al-Ruqeishi, {Majid S.} and Tariq Mohiuddin",

year = "2016",

doi = "10.21272/jnep.8(2).02001",

language = "English",

volume = "8",

journal = "Journal of Nano- and Electronic Physics",

issn = "2077-6772",

publisher = "Sumy State University",

number = "2",

}

TY - JOUR

T1 - Fabrication of β-silicon carbide nanowires from carbon powder and silicon wafer

AU - Al-Ruqeishi, Majid S.

AU - Mohiuddin, Tariq

PY - 2016

Y1 - 2016

N2 - β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.

AB - β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.

KW - Carbo-thermal technique

KW - Nano-optics

KW - SiC nanowires

UR - http://www.scopus.com/inward/record.url?scp=84976875319&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84976875319&partnerID=8YFLogxK

U2 - 10.21272/jnep.8(2).02001

DO - 10.21272/jnep.8(2).02001

M3 - Article

AN - SCOPUS:84976875319

VL - 8

JO - Journal of Nano- and Electronic Physics

JF - Journal of Nano- and Electronic Physics

SN - 2077-6772

IS - 2

M1 - 02001

ER -

Fabrication of β-silicon carbide nanowires from carbon powder and silicon wafer

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this