Abstract
β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.
| Original language | English |
|---|---|
| Article number | 02001 |
| Journal | Journal of Nano- and Electronic Physics |
| Volume | 8 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2016 |
Keywords
- Carbo-thermal technique
- Nano-optics
- SiC nanowires
ASJC Scopus subject areas
- Condensed Matter Physics
- Radiation
- Materials Science(all)
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Al-Ruqeishi, M. S., & Mohiuddin, T. (2016). Fabrication of β-silicon carbide nanowires from carbon powder and silicon wafer. Journal of Nano- and Electronic Physics, 8(2), [02001]. https://doi.org/10.21272/jnep.8(2).02001