Fabrication of β-silicon carbide nanowires from carbon powder and silicon wafer

Majid S. Al-Ruqeishi*, Tariq Mohiuddin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.

Original languageEnglish
Article number02001
JournalJournal of Nano- and Electronic Physics
Issue number2
Publication statusPublished - 2016


  • Carbo-thermal technique
  • Nano-optics
  • SiC nanowires

ASJC Scopus subject areas

  • Radiation
  • Materials Science(all)
  • Condensed Matter Physics


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