Fabrication of β-silicon carbide nanowires from carbon powder and silicon wafer

Majid S. Al-Ruqeishi; Tariq Mohiuddin

doi:10.21272/jnep.8(2).02001

Fabrication of β-silicon carbide nanowires from carbon powder and silicon wafer

Majid S. Al-Ruqeishi^*, Tariq Mohiuddin

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.

Original language	English
Article number	02001
Journal	Journal of Nano- and Electronic Physics
Volume	8
Issue number	2
DOIs	https://doi.org/10.21272/jnep.8(2).02001
Publication status	Published - 2016

Keywords

Carbo-thermal technique
Nano-optics
SiC nanowires

ASJC Scopus subject areas

Condensed Matter Physics
Radiation
Materials Science(all)

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abstract = "β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.",

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AU - Mohiuddin, Tariq

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N2 - β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.

AB - β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.

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