Fabrication of β-silicon carbide nanowires from carbon powder and silicon wafer

Majid S. Al-Ruqeishi, Tariq Mohiuddin

Research output: Contribution to journalArticle

Abstract

β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.

Original languageEnglish
Article number02001
JournalJournal of Nano- and Electronic Physics
Volume8
Issue number2
DOIs
Publication statusPublished - 2016

Fingerprint

Heating rate
Silicon wafers
Silicon carbide
silicon carbides
Powders
Nanowires
nanowires
Carbon
wafers
Fabrication
fabrication
heating
theses
carbon
Charcoal
silicon
statistical distributions
Diffraction patterns
gas flow
Flow of gases

Keywords

  • Carbo-thermal technique
  • Nano-optics
  • SiC nanowires

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Radiation
  • Materials Science(all)

Cite this

Fabrication of β-silicon carbide nanowires from carbon powder and silicon wafer. / Al-Ruqeishi, Majid S.; Mohiuddin, Tariq.

In: Journal of Nano- and Electronic Physics, Vol. 8, No. 2, 02001, 2016.

Research output: Contribution to journalArticle

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