Fabrication of β-silicon carbide nanowires from carbon powder and silicon wafer

β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.