Abstract
β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.
| Original language | English |
|---|---|
| Article number | 02001 |
| Journal | Journal of Nano- and Electronic Physics |
| Volume | 8 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2016 |
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Keywords
- Carbo-thermal technique
- Nano-optics
- SiC nanowires
ASJC Scopus subject areas
- Condensed Matter Physics
- Radiation
- Materials Science(all)
Cite this
Fabrication of β-silicon carbide nanowires from carbon powder and silicon wafer. / Al-Ruqeishi, Majid S.; Mohiuddin, Tariq.
In: Journal of Nano- and Electronic Physics, Vol. 8, No. 2, 02001, 2016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication of β-silicon carbide nanowires from carbon powder and silicon wafer
AU - Al-Ruqeishi, Majid S.
AU - Mohiuddin, Tariq
PY - 2016
Y1 - 2016
N2 - β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.
AB - β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.
KW - Carbo-thermal technique
KW - Nano-optics
KW - SiC nanowires
UR - http://www.scopus.com/inward/record.url?scp=84976875319&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84976875319&partnerID=8YFLogxK
U2 - 10.21272/jnep.8(2).02001
DO - 10.21272/jnep.8(2).02001
M3 - Article
AN - SCOPUS:84976875319
VL - 8
JO - Journal of Nano- and Electronic Physics
JF - Journal of Nano- and Electronic Physics
SN - 2077-6772
IS - 2
M1 - 02001
ER -