Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile

M. G. Dowsett, S. H. Al-Harthi, T. J. Ormsby, B. Guzmán, F. S. Gard, T. C.Q. Noakes, P. Bailey, C. F. McConville

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A method to accurately determine the sputter yield of the matrix from the earliest stages of a sputter profile is described. Using the technique of medium-energy ion-scattering spectroscopy, this method provides data that enable a depth scale to be established from subnanometer depths onward. It may be adapted to samples containing a thin amorphous surface layer (e.g., a preamorphized shallow implant) or to crystalline surfaces containing a heavy-element marker layer. In this Brief Report we have used this method to interpret the near-surface profile using erosion-rate data obtained from a 1-keV boron implant into a germanium preamorphized silicon (001) surface.

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number11
DOIs
Publication statusPublished - Jan 1 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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