Electrostatic fringing-fields effects on the structural behavior of MEMS shallow arches

Hassen M. Ouakad*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

36 Citations (SciVal)


In this paper, we investigate the effects of electric fringing-fields on the structural behavior of a MEMS shallow arch. We consider the Galerkin method-based reduced-order modeling to discretize the governing nonlinear equation and obtain a lumped-parameter model of the system. We then assume two most well-known models for demonstrating the fringing-fields effects, that is the Palmer’s and the Mejis-Fokkema models. Using the discretized model, we investigate the system nonlinear behavior assuming the two electric fringing-fields models. The presented results show that for these particular cases of arch configuration, fringing-fields effects should be considered since it improves the prediction of corresponding voltages for both snap-through and pull-in structural instabilities as well as the overall static deflection of the MEMS arch. Comparisons of the acquired numerical results with some available experimental data as well as ANSYS® based finite-elements simulations confirm that neglecting the fringing-fields effects in MEMS arches can represent a significant source of error which should be avoided using much more accurate modeling techniques.

Original languageEnglish
Pages (from-to)1391-1399
Number of pages9
JournalMicrosystem Technologies
Issue number3
Publication statusPublished - Mar 1 2018
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Hardware and Architecture
  • Electrical and Electronic Engineering


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