ELECTRON TRANSPORT IN LIQUID SILICON AND GERMANIUM.

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3 Citations (Scopus)

Abstract

We report on the electrical resistivity and thermoelectric power of liquid Si and Ge. The basic ingredients of the calculations are obtained by using a variational procedure based on a third-order perturbation theory. In the calculations we employ on-Fermi-sphere model potential suitable for these systems. The reference structure factors used in the final calculations are obtained by introducing softness in the hard-sphere description of the structure factors through a scaling procedure. The calculated resistivities and thermoelectric power are comparable to the experimental as well as to the available theoretical results.

Original languageEnglish
Pages (from-to)391-389
Number of pages3
JournalPhilosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties
Volume53
Issue number5
Publication statusPublished - May 1986

ASJC Scopus subject areas

  • Engineering(all)

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