Electrochemical study of novel nanostructured In2S3 and its effect on oxidative damage to DNA purine bases

A. Ferancova; S. Rengaraj; Y. Kim; S. Vijayalakshmi; J. Labuda; J. Bobacka; M. Sillanpää

doi:10.1016/j.electacta.2012.12.132

Electrochemical study of novel nanostructured In₂S₃ and its effect on oxidative damage to DNA purine bases

A. Ferancova^*, S. Rengaraj, Y. Kim, S. Vijayalakshmi, J. Labuda, J. Bobacka, M. Sillanpää

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Novel nanostructured In₂S₃ was synthesized using a one-step solution growth approach in various indium nitrate to thioacetamide ratio and in absence of surfactants. Morphology studies showed the flower-like structure of the nanomaterials obtained. For the electrochemical study, In ₂S₃ nanomaterials were immobilized at the surface of the glassy carbon electrode. Modified glassy carbon electrodes were then characterized by cyclic voltammetry of the three redox systems: [Ru(NH ₃)₆]³⁺/[Ru(NH₃)₆] ²⁺, [Fe(CN)₆]^3-/[Fe(CN)₆] ^4-, and hydroquinone/quinone. The calculated standard electron transfer rate constants were in agreement with those calculated from electrochemical impedance measurements. Electrochemical impedance spectra measured at different potential values were used to study semiconducting properties of In₂S₃ samples. Analysis showed n-type semiconductor behavior for all In₂S₃ samples. The donor density (∼10^-18 cm^-3) and flat band potential (∼-0.8 V) were in agreement with those reported for indium contained semiconductors. As the semiconducting and photocatalytic properties are related to production of the free radicals able to damage DNA, the effect of In ₂S₃ exposed to UV radiation on DNA bases was studied. In₂S₃ nanomaterials in the dispersion medium enhanced the production of free radicals and the oxidation stress and caused significant damage to DNA bases. Our results show that In₂S₃ nanomaterials exhibit good semiconducting properties and are also efficient photocatalysts.

Original language	English
Pages (from-to)	124-131
Number of pages	8
Journal	Electrochimica Acta
Volume	92
DOIs	https://doi.org/10.1016/j.electacta.2012.12.132
Publication status	Published - Mar 1 2013

Keywords

DNA cleavage
Electrochemical properties
Oxidative stress
Photocatalyst
Semiconducting nanomaterials

ASJC Scopus subject areas

General Chemical Engineering
Electrochemistry

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10.1016/j.electacta.2012.12.132

Cite this

@article{cd5641f32b1b498c9affd00345b18aca,

title = "Electrochemical study of novel nanostructured In2S3 and its effect on oxidative damage to DNA purine bases",

abstract = "Novel nanostructured In2S3 was synthesized using a one-step solution growth approach in various indium nitrate to thioacetamide ratio and in absence of surfactants. Morphology studies showed the flower-like structure of the nanomaterials obtained. For the electrochemical study, In 2S3 nanomaterials were immobilized at the surface of the glassy carbon electrode. Modified glassy carbon electrodes were then characterized by cyclic voltammetry of the three redox systems: [Ru(NH 3)6]3+/[Ru(NH3)6] 2+, [Fe(CN)6]3-/[Fe(CN)6] 4-, and hydroquinone/quinone. The calculated standard electron transfer rate constants were in agreement with those calculated from electrochemical impedance measurements. Electrochemical impedance spectra measured at different potential values were used to study semiconducting properties of In2S3 samples. Analysis showed n-type semiconductor behavior for all In2S3 samples. The donor density (∼10-18 cm-3) and flat band potential (∼-0.8 V) were in agreement with those reported for indium contained semiconductors. As the semiconducting and photocatalytic properties are related to production of the free radicals able to damage DNA, the effect of In 2S3 exposed to UV radiation on DNA bases was studied. In2S3 nanomaterials in the dispersion medium enhanced the production of free radicals and the oxidation stress and caused significant damage to DNA bases. Our results show that In2S3 nanomaterials exhibit good semiconducting properties and are also efficient photocatalysts.",

keywords = "DNA cleavage, Electrochemical properties, Oxidative stress, Photocatalyst, Semiconducting nanomaterials",

author = "A. Ferancova and S. Rengaraj and Y. Kim and S. Vijayalakshmi and J. Labuda and J. Bobacka and M. Sillanp{\"a}{\"a}",

note = "Funding Information: This research project has been supported by a Marie Curie Transfer of Knowledge Fellowship of the European Community's Sixth Framework Programme under contract number MTKD-CT-2006-042637. A.F. and J.B. would also like to thank to the {\AA}bo Akademi Process Chemistry Center. JL also thank the Scientific Grant Agency VEGA of the Slovak Republic (project no. 1/0182/11).",

year = "2013",

month = mar,

day = "1",

doi = "10.1016/j.electacta.2012.12.132",

language = "English",

volume = "92",

pages = "124--131",

journal = "Electrochimica Acta",

issn = "0013-4686",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Electrochemical study of novel nanostructured In2S3 and its effect on oxidative damage to DNA purine bases

AU - Ferancova, A.

AU - Rengaraj, S.

AU - Kim, Y.

AU - Vijayalakshmi, S.

AU - Labuda, J.

AU - Bobacka, J.

AU - Sillanpää, M.

N1 - Funding Information: This research project has been supported by a Marie Curie Transfer of Knowledge Fellowship of the European Community's Sixth Framework Programme under contract number MTKD-CT-2006-042637. A.F. and J.B. would also like to thank to the Åbo Akademi Process Chemistry Center. JL also thank the Scientific Grant Agency VEGA of the Slovak Republic (project no. 1/0182/11).

PY - 2013/3/1

Y1 - 2013/3/1

N2 - Novel nanostructured In2S3 was synthesized using a one-step solution growth approach in various indium nitrate to thioacetamide ratio and in absence of surfactants. Morphology studies showed the flower-like structure of the nanomaterials obtained. For the electrochemical study, In 2S3 nanomaterials were immobilized at the surface of the glassy carbon electrode. Modified glassy carbon electrodes were then characterized by cyclic voltammetry of the three redox systems: [Ru(NH 3)6]3+/[Ru(NH3)6] 2+, [Fe(CN)6]3-/[Fe(CN)6] 4-, and hydroquinone/quinone. The calculated standard electron transfer rate constants were in agreement with those calculated from electrochemical impedance measurements. Electrochemical impedance spectra measured at different potential values were used to study semiconducting properties of In2S3 samples. Analysis showed n-type semiconductor behavior for all In2S3 samples. The donor density (∼10-18 cm-3) and flat band potential (∼-0.8 V) were in agreement with those reported for indium contained semiconductors. As the semiconducting and photocatalytic properties are related to production of the free radicals able to damage DNA, the effect of In 2S3 exposed to UV radiation on DNA bases was studied. In2S3 nanomaterials in the dispersion medium enhanced the production of free radicals and the oxidation stress and caused significant damage to DNA bases. Our results show that In2S3 nanomaterials exhibit good semiconducting properties and are also efficient photocatalysts.

AB - Novel nanostructured In2S3 was synthesized using a one-step solution growth approach in various indium nitrate to thioacetamide ratio and in absence of surfactants. Morphology studies showed the flower-like structure of the nanomaterials obtained. For the electrochemical study, In 2S3 nanomaterials were immobilized at the surface of the glassy carbon electrode. Modified glassy carbon electrodes were then characterized by cyclic voltammetry of the three redox systems: [Ru(NH 3)6]3+/[Ru(NH3)6] 2+, [Fe(CN)6]3-/[Fe(CN)6] 4-, and hydroquinone/quinone. The calculated standard electron transfer rate constants were in agreement with those calculated from electrochemical impedance measurements. Electrochemical impedance spectra measured at different potential values were used to study semiconducting properties of In2S3 samples. Analysis showed n-type semiconductor behavior for all In2S3 samples. The donor density (∼10-18 cm-3) and flat band potential (∼-0.8 V) were in agreement with those reported for indium contained semiconductors. As the semiconducting and photocatalytic properties are related to production of the free radicals able to damage DNA, the effect of In 2S3 exposed to UV radiation on DNA bases was studied. In2S3 nanomaterials in the dispersion medium enhanced the production of free radicals and the oxidation stress and caused significant damage to DNA bases. Our results show that In2S3 nanomaterials exhibit good semiconducting properties and are also efficient photocatalysts.

KW - DNA cleavage

KW - Electrochemical properties

KW - Oxidative stress

KW - Photocatalyst

KW - Semiconducting nanomaterials

UR - http://www.scopus.com/inward/record.url?scp=84873052555&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873052555&partnerID=8YFLogxK

U2 - 10.1016/j.electacta.2012.12.132

DO - 10.1016/j.electacta.2012.12.132

M3 - Article

AN - SCOPUS:84873052555

SN - 0013-4686

VL - 92

SP - 124

EP - 131

JO - Electrochimica Acta

JF - Electrochimica Acta

ER -