Abstract
It is shown in the present study that the strong temperature dependence of Pd/n-SiGe/Si Schottky diode parameters, obtained experimentally, could not be fully explained by considering the combined effects of tunneling, recombination, image-force lowering and series resistance. A satisfactory explanation, however, could be achieved within the framework of a modified thermionic emission theory with the assumption that the barrier potential at the Pd/SiGe interface is not flat but fluctuates around a mean value of 0.8 eV with a standard deviation of 84 meV. This mean barrier height is very close to the one derived from C-V data.
| Original language | English |
|---|---|
| Title of host publication | AIP Conference Proceedings |
| Pages | 112-117 |
| Number of pages | 6 |
| Volume | 909 |
| DOIs | |
| Publication status | Published - 2007 |
| Event | SOLID STATE SCIENCE AND TECHNOLOGY: 2nd International Conference on Solid State Science and Technology 2006, ICSSST 2006 - Kuala Terengganu, Malaysia Duration: Sep 4 2006 → Sep 6 2006 |
Other
| Other | SOLID STATE SCIENCE AND TECHNOLOGY: 2nd International Conference on Solid State Science and Technology 2006, ICSSST 2006 |
|---|---|
| Country | Malaysia |
| City | Kuala Terengganu |
| Period | 9/4/06 → 9/6/06 |
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Keywords
- Inhomogeneous barrier
- Schottky diode
- SiGe
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Electrical transport study on Pd/n-SiGe/Si Schottky diodes. / Sellai, A.; Mamor, M.; Gard, F. S.; Bouziane, K.; Al-Harthi, S.; Al-Busaidi, M.
AIP Conference Proceedings. Vol. 909 2007. p. 112-117.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Electrical transport study on Pd/n-SiGe/Si Schottky diodes
AU - Sellai, A.
AU - Mamor, M.
AU - Gard, F. S.
AU - Bouziane, K.
AU - Al-Harthi, S.
AU - Al-Busaidi, M.
PY - 2007
Y1 - 2007
N2 - It is shown in the present study that the strong temperature dependence of Pd/n-SiGe/Si Schottky diode parameters, obtained experimentally, could not be fully explained by considering the combined effects of tunneling, recombination, image-force lowering and series resistance. A satisfactory explanation, however, could be achieved within the framework of a modified thermionic emission theory with the assumption that the barrier potential at the Pd/SiGe interface is not flat but fluctuates around a mean value of 0.8 eV with a standard deviation of 84 meV. This mean barrier height is very close to the one derived from C-V data.
AB - It is shown in the present study that the strong temperature dependence of Pd/n-SiGe/Si Schottky diode parameters, obtained experimentally, could not be fully explained by considering the combined effects of tunneling, recombination, image-force lowering and series resistance. A satisfactory explanation, however, could be achieved within the framework of a modified thermionic emission theory with the assumption that the barrier potential at the Pd/SiGe interface is not flat but fluctuates around a mean value of 0.8 eV with a standard deviation of 84 meV. This mean barrier height is very close to the one derived from C-V data.
KW - Inhomogeneous barrier
KW - Schottky diode
KW - SiGe
UR - http://www.scopus.com/inward/record.url?scp=34547308889&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34547308889&partnerID=8YFLogxK
U2 - 10.1063/1.2739835
DO - 10.1063/1.2739835
M3 - Conference contribution
SN - 0735404178
SN - 9780735404175
VL - 909
SP - 112
EP - 117
BT - AIP Conference Proceedings
ER -