Abstract
It is shown in the present study that the strong temperature dependence of Pd/n-SiGe/Si Schottky diode parameters, obtained experimentally, could not be fully explained by considering the combined effects of tunneling, recombination, image-force lowering and series resistance. A satisfactory explanation, however, could be achieved within the framework of a modified thermionic emission theory with the assumption that the barrier potential at the Pd/SiGe interface is not flat but fluctuates around a mean value of 0.8 eV with a standard deviation of 84 meV. This mean barrier height is very close to the one derived from C-V data.
Original language | English |
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Title of host publication | AIP Conference Proceedings |
Pages | 112-117 |
Number of pages | 6 |
Volume | 909 |
DOIs | |
Publication status | Published - 2007 |
Event | SOLID STATE SCIENCE AND TECHNOLOGY: 2nd International Conference on Solid State Science and Technology 2006, ICSSST 2006 - Kuala Terengganu, Malaysia Duration: Sep 4 2006 → Sep 6 2006 |
Other
Other | SOLID STATE SCIENCE AND TECHNOLOGY: 2nd International Conference on Solid State Science and Technology 2006, ICSSST 2006 |
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Country | Malaysia |
City | Kuala Terengganu |
Period | 9/4/06 → 9/6/06 |
Keywords
- Inhomogeneous barrier
- Schottky diode
- SiGe
ASJC Scopus subject areas
- Physics and Astronomy(all)