Electrical transport study on Pd/n-SiGe/Si Schottky diodes

A. Sellai; M. Mamor; F. S. Gard; K. Bouziane; S. Al-Harthi; M. Al-Busaidi

doi:10.1063/1.2739835

Electrical transport study on Pd/n-SiGe/Si Schottky diodes

A. Sellai, M. Mamor, F. S. Gard, K. Bouziane, S. Al-Harthi, M. Al-Busaidi

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

It is shown in the present study that the strong temperature dependence of Pd/n-SiGe/Si Schottky diode parameters, obtained experimentally, could not be fully explained by considering the combined effects of tunneling, recombination, image-force lowering and series resistance. A satisfactory explanation, however, could be achieved within the framework of a modified thermionic emission theory with the assumption that the barrier potential at the Pd/SiGe interface is not flat but fluctuates around a mean value of 0.8 eV with a standard deviation of 84 meV. This mean barrier height is very close to the one derived from C-V data.

Original language	English
Title of host publication	AIP Conference Proceedings
Pages	112-117
Number of pages	6
Volume	909
DOIs	https://doi.org/10.1063/1.2739835
Publication status	Published - 2007
Event	SOLID STATE SCIENCE AND TECHNOLOGY: 2nd International Conference on Solid State Science and Technology 2006, ICSSST 2006 - Kuala Terengganu, Malaysia Duration: Sep 4 2006 → Sep 6 2006

Other

Other	SOLID STATE SCIENCE AND TECHNOLOGY: 2nd International Conference on Solid State Science and Technology 2006, ICSSST 2006
Country	Malaysia
City	Kuala Terengganu
Period	9/4/06 → 9/6/06

Keywords

Inhomogeneous barrier
Schottky diode
SiGe

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.2739835

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Sellai, A., Mamor, M., Gard, F. S., Bouziane, K., Al-Harthi, S., & Al-Busaidi, M. (2007). Electrical transport study on Pd/n-SiGe/Si Schottky diodes. In AIP Conference Proceedings (Vol. 909, pp. 112-117) https://doi.org/10.1063/1.2739835

Sellai, A, Mamor, M, Gard, FS, Bouziane, K, Al-Harthi, S & Al-Busaidi, M 2007, Electrical transport study on Pd/n-SiGe/Si Schottky diodes. in AIP Conference Proceedings. vol. 909, pp. 112-117, SOLID STATE SCIENCE AND TECHNOLOGY: 2nd International Conference on Solid State Science and Technology 2006, ICSSST 2006, Kuala Terengganu, Malaysia, 9/4/06. https://doi.org/10.1063/1.2739835

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title = "Electrical transport study on Pd/n-SiGe/Si Schottky diodes",

abstract = "It is shown in the present study that the strong temperature dependence of Pd/n-SiGe/Si Schottky diode parameters, obtained experimentally, could not be fully explained by considering the combined effects of tunneling, recombination, image-force lowering and series resistance. A satisfactory explanation, however, could be achieved within the framework of a modified thermionic emission theory with the assumption that the barrier potential at the Pd/SiGe interface is not flat but fluctuates around a mean value of 0.8 eV with a standard deviation of 84 meV. This mean barrier height is very close to the one derived from C-V data.",

keywords = "Inhomogeneous barrier, Schottky diode, SiGe",

author = "A. Sellai and M. Mamor and Gard, {F. S.} and K. Bouziane and S. Al-Harthi and M. Al-Busaidi",

year = "2007",

doi = "10.1063/1.2739835",

language = "English",

isbn = "0735404178",

volume = "909",

pages = "112--117",

booktitle = "AIP Conference Proceedings",

note = "SOLID STATE SCIENCE AND TECHNOLOGY: 2nd International Conference on Solid State Science and Technology 2006, ICSSST 2006 ; Conference date: 04-09-2006 Through 06-09-2006",

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T1 - Electrical transport study on Pd/n-SiGe/Si Schottky diodes

AU - Sellai, A.

AU - Mamor, M.

AU - Gard, F. S.

AU - Bouziane, K.

AU - Al-Harthi, S.

AU - Al-Busaidi, M.

PY - 2007

Y1 - 2007

N2 - It is shown in the present study that the strong temperature dependence of Pd/n-SiGe/Si Schottky diode parameters, obtained experimentally, could not be fully explained by considering the combined effects of tunneling, recombination, image-force lowering and series resistance. A satisfactory explanation, however, could be achieved within the framework of a modified thermionic emission theory with the assumption that the barrier potential at the Pd/SiGe interface is not flat but fluctuates around a mean value of 0.8 eV with a standard deviation of 84 meV. This mean barrier height is very close to the one derived from C-V data.

AB - It is shown in the present study that the strong temperature dependence of Pd/n-SiGe/Si Schottky diode parameters, obtained experimentally, could not be fully explained by considering the combined effects of tunneling, recombination, image-force lowering and series resistance. A satisfactory explanation, however, could be achieved within the framework of a modified thermionic emission theory with the assumption that the barrier potential at the Pd/SiGe interface is not flat but fluctuates around a mean value of 0.8 eV with a standard deviation of 84 meV. This mean barrier height is very close to the one derived from C-V data.

KW - Inhomogeneous barrier

KW - Schottky diode

KW - SiGe

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BT - AIP Conference Proceedings

T2 - SOLID STATE SCIENCE AND TECHNOLOGY: 2nd International Conference on Solid State Science and Technology 2006, ICSSST 2006

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