Electrical transport study on Pd/n-SiGe/Si Schottky diodes

A. Sellai, M. Mamor, F. S. Gard, K. Bouziane, S. Al-Harthi, M. Al-Busaidi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

It is shown in the present study that the strong temperature dependence of Pd/n-SiGe/Si Schottky diode parameters, obtained experimentally, could not be fully explained by considering the combined effects of tunneling, recombination, image-force lowering and series resistance. A satisfactory explanation, however, could be achieved within the framework of a modified thermionic emission theory with the assumption that the barrier potential at the Pd/SiGe interface is not flat but fluctuates around a mean value of 0.8 eV with a standard deviation of 84 meV. This mean barrier height is very close to the one derived from C-V data.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages112-117
Number of pages6
Volume909
DOIs
Publication statusPublished - 2007
EventSOLID STATE SCIENCE AND TECHNOLOGY: 2nd International Conference on Solid State Science and Technology 2006, ICSSST 2006 - Kuala Terengganu, Malaysia
Duration: Sep 4 2006Sep 6 2006

Other

OtherSOLID STATE SCIENCE AND TECHNOLOGY: 2nd International Conference on Solid State Science and Technology 2006, ICSSST 2006
CountryMalaysia
CityKuala Terengganu
Period9/4/069/6/06

    Fingerprint

Keywords

  • Inhomogeneous barrier
  • Schottky diode
  • SiGe

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Sellai, A., Mamor, M., Gard, F. S., Bouziane, K., Al-Harthi, S., & Al-Busaidi, M. (2007). Electrical transport study on Pd/n-SiGe/Si Schottky diodes. In AIP Conference Proceedings (Vol. 909, pp. 112-117) https://doi.org/10.1063/1.2739835