Electrical transport study on Pd/n-SiGe/Si Schottky diodes

A. Sellai, M. Mamor, F. S. Gard, K. Bouziane, S. Al-Harthi, M. Al-Busaidi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

It is shown in the present study that the strong temperature dependence of Pd/n-SiGe/Si Schottky diode parameters, obtained experimentally, could not be fully explained by considering the combined effects of tunneling, recombination, image-force lowering and series resistance. A satisfactory explanation, however, could be achieved within the framework of a modified thermionic emission theory with the assumption that the barrier potential at the Pd/SiGe interface is not flat but fluctuates around a mean value of 0.8 eV with a standard deviation of 84 meV. This mean barrier height is very close to the one derived from C-V data.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages112-117
Number of pages6
Volume909
DOIs
Publication statusPublished - 2007
EventSOLID STATE SCIENCE AND TECHNOLOGY: 2nd International Conference on Solid State Science and Technology 2006, ICSSST 2006 - Kuala Terengganu, Malaysia
Duration: Sep 4 2006Sep 6 2006

Other

OtherSOLID STATE SCIENCE AND TECHNOLOGY: 2nd International Conference on Solid State Science and Technology 2006, ICSSST 2006
CountryMalaysia
CityKuala Terengganu
Period9/4/069/6/06

Fingerprint

Schottky diodes
thermionic emission
standard deviation
temperature dependence

Keywords

  • Inhomogeneous barrier
  • Schottky diode
  • SiGe

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Sellai, A., Mamor, M., Gard, F. S., Bouziane, K., Al-Harthi, S., & Al-Busaidi, M. (2007). Electrical transport study on Pd/n-SiGe/Si Schottky diodes. In AIP Conference Proceedings (Vol. 909, pp. 112-117) https://doi.org/10.1063/1.2739835

Electrical transport study on Pd/n-SiGe/Si Schottky diodes. / Sellai, A.; Mamor, M.; Gard, F. S.; Bouziane, K.; Al-Harthi, S.; Al-Busaidi, M.

AIP Conference Proceedings. Vol. 909 2007. p. 112-117.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sellai, A, Mamor, M, Gard, FS, Bouziane, K, Al-Harthi, S & Al-Busaidi, M 2007, Electrical transport study on Pd/n-SiGe/Si Schottky diodes. in AIP Conference Proceedings. vol. 909, pp. 112-117, SOLID STATE SCIENCE AND TECHNOLOGY: 2nd International Conference on Solid State Science and Technology 2006, ICSSST 2006, Kuala Terengganu, Malaysia, 9/4/06. https://doi.org/10.1063/1.2739835
Sellai A, Mamor M, Gard FS, Bouziane K, Al-Harthi S, Al-Busaidi M. Electrical transport study on Pd/n-SiGe/Si Schottky diodes. In AIP Conference Proceedings. Vol. 909. 2007. p. 112-117 https://doi.org/10.1063/1.2739835
Sellai, A. ; Mamor, M. ; Gard, F. S. ; Bouziane, K. ; Al-Harthi, S. ; Al-Busaidi, M. / Electrical transport study on Pd/n-SiGe/Si Schottky diodes. AIP Conference Proceedings. Vol. 909 2007. pp. 112-117
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