Electrical characteristics of Mo/4H-SiC Schottky diodes having ion-implanted guard rings: Temperature and implant-dose dependence

A. Latreche, Z. Ouennoughi*, A. Sellai, R. Weiss, H. Ryssel

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

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Physics

Material Science