Electrical characteristics of Mo/4H-SiC Schottky diodes having ion-implanted guard rings

Temperature and implant-dose dependence

A. Latreche, Z. Ouennoughi, A. Sellai, R. Weiss, H. Ryssel

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The electrical characteristics of ion-implanted guard rings for molybdenum (Mo) Schottky diodes on 4H-SiC are analyzed on the basis of the standard thermionic emission model and the assumption of a Gaussian distribution of the barrier height. For edge termination, high-resistivity guard rings manufactured by carbon and aluminum ion-implanted areas were used. Extractions of barrier heights of molybdenum on silicon carbide (4H-SiC) Schottky diodes have been performed on structures with various gate metallization, using both current-voltage-temperature (I-V-T) and capacitance-voltage (C-V) measurements. Characteristic features of the Schottky barrier height (SBH) are considered in relation to the specific dose of the carbon- or aluminum-implanted guard ring. Contacts showed excellent Schottky behavior ideality factors between 1.02 and 1.24 in the range of 303-473 K. The measured SBHs were between 0.92 and 1.17 eV in the same temperature range from I-V-T characteristics. The variations in the barrier height, which is significantly temperature- and implantation-dose- dependent, are well fitted to a single Gaussian distribution function. Experimental results agree reasonably well by using this approach, particularly for carbon implantation dose of 1.75 × 1014 cm-2, and a mean barrier height () of 1.22 eV and zero bias standard deviation σ0 = 0.067 V have been obtained. Furthermore, the modified Richardson plot according to the Gaussian distribution model resulted in a mean barrier height () and a Richardson constant (A*) of 1.22 eV and 148 A cm-2 K-2, respectively. The A* value obtained from this plot is in very close agreement with the theoretical value of 146 A cm -2 K-2 for n-type 4H-SiC. Therefore, it has been concluded that the temperature dependence of the forward (I-V) characteristics of the Mo/4H-SiC contacts can be successfully explained on the basis of a thermionic emission conduction mechanism with Guassianly distributed barriers.

Original languageEnglish
Article number085003
JournalSemiconductor Science and Technology
Volume26
Issue number8
DOIs
Publication statusPublished - Aug 2011

Fingerprint

Molybdenum
Schottky diodes
molybdenum
Gaussian distribution
Diodes
Ions
Thermionic emission
dosage
Carbon
rings
Aluminum
normal density functions
ions
thermionic emission
Temperature
Capacitance measurement
temperature
Voltage measurement
Metallizing
carbon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Electrical characteristics of Mo/4H-SiC Schottky diodes having ion-implanted guard rings : Temperature and implant-dose dependence. / Latreche, A.; Ouennoughi, Z.; Sellai, A.; Weiss, R.; Ryssel, H.

In: Semiconductor Science and Technology, Vol. 26, No. 8, 085003, 08.2011.

Research output: Contribution to journalArticle

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