Electrical Behavior of MBE Grown Interfacial Misfit GaSb/GaAs Heterostructures with and Without Te-Doped Interfaces

Mohsin Aziz, Jorlandio Francisco Felix, Noor Al Saqri, Dler Jameel, Faisal Saleh Al Mashary, Hind Mohammed Albalawi, Haifaa Mohammed Abdullah Alghamdi, David Taylor, Mohamed Henini

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A detailed study of interface states in interfacial misfit (IMF) grown GaSb on GaAs substrates is presented. Two types of structures, namely, uncompensated and Te compensated, are investigated using current-voltage, capacitance-frequency, conductance-frequency, and deep level transient spectroscopy techniques. Our studies reveal that incorporation of Te at the interface (IMF) causes a degradation of the Te-compensated devices. A higher number of electrical active defects and higher value of interface states are detected in Te-compensated IMF GaSb/GaAs devices compared with as-grown IMF GaSb/GaAs devices.

Original languageEnglish
Article number7312966
Pages (from-to)3980-3986
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume62
Issue number12
DOIs
Publication statusPublished - Dec 1 2015

Fingerprint

Interface states
Molecular beam epitaxy
Heterojunctions
Deep level transient spectroscopy
Capacitance
Degradation
Defects
Electric potential
Substrates
gallium arsenide

Keywords

  • Capacitance-frequency (C-F)
  • capacitance-voltage (C-V)
  • current-voltage (I-V)
  • deep level transient spectroscopy (DLTS).

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Electrical Behavior of MBE Grown Interfacial Misfit GaSb/GaAs Heterostructures with and Without Te-Doped Interfaces. / Aziz, Mohsin; Felix, Jorlandio Francisco; Al Saqri, Noor; Jameel, Dler; Mashary, Faisal Saleh Al; Albalawi, Hind Mohammed; Alghamdi, Haifaa Mohammed Abdullah; Taylor, David; Henini, Mohamed.

In: IEEE Transactions on Electron Devices, Vol. 62, No. 12, 7312966, 01.12.2015, p. 3980-3986.

Research output: Contribution to journalArticle

Aziz, M, Felix, JF, Al Saqri, N, Jameel, D, Mashary, FSA, Albalawi, HM, Alghamdi, HMA, Taylor, D & Henini, M 2015, 'Electrical Behavior of MBE Grown Interfacial Misfit GaSb/GaAs Heterostructures with and Without Te-Doped Interfaces', IEEE Transactions on Electron Devices, vol. 62, no. 12, 7312966, pp. 3980-3986. https://doi.org/10.1109/TED.2015.2488904
Aziz, Mohsin ; Felix, Jorlandio Francisco ; Al Saqri, Noor ; Jameel, Dler ; Mashary, Faisal Saleh Al ; Albalawi, Hind Mohammed ; Alghamdi, Haifaa Mohammed Abdullah ; Taylor, David ; Henini, Mohamed. / Electrical Behavior of MBE Grown Interfacial Misfit GaSb/GaAs Heterostructures with and Without Te-Doped Interfaces. In: IEEE Transactions on Electron Devices. 2015 ; Vol. 62, No. 12. pp. 3980-3986.
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