Electrical Behavior of MBE Grown Interfacial Misfit GaSb/GaAs Heterostructures with and Without Te-Doped Interfaces

Mohsin Aziz, Jorlandio Francisco Felix, Noor Al Saqri, Dler Jameel, Faisal Saleh Al Mashary, Hind Mohammed Albalawi, Haifaa Mohammed Abdullah Alghamdi, David Taylor, Mohamed Henini

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A detailed study of interface states in interfacial misfit (IMF) grown GaSb on GaAs substrates is presented. Two types of structures, namely, uncompensated and Te compensated, are investigated using current-voltage, capacitance-frequency, conductance-frequency, and deep level transient spectroscopy techniques. Our studies reveal that incorporation of Te at the interface (IMF) causes a degradation of the Te-compensated devices. A higher number of electrical active defects and higher value of interface states are detected in Te-compensated IMF GaSb/GaAs devices compared with as-grown IMF GaSb/GaAs devices.

Original languageEnglish
Article number7312966
Pages (from-to)3980-3986
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number12
Publication statusPublished - Dec 1 2015



  • Capacitance-frequency (C-F)
  • capacitance-voltage (C-V)
  • current-voltage (I-V)
  • deep level transient spectroscopy (DLTS).

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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