Electrical Behavior of MBE Grown Interfacial Misfit GaSb/GaAs Heterostructures with and Without Te-Doped Interfaces

Mohsin Aziz; Jorlandio Francisco Felix; Noor Al Saqri; Dler Jameel; Faisal Saleh Al Mashary; Hind Mohammed Albalawi; Haifaa Mohammed Abdullah Alghamdi; David Taylor; Mohamed Henini

doi:10.1109/TED.2015.2488904

Electrical Behavior of MBE Grown Interfacial Misfit GaSb/GaAs Heterostructures with and Without Te-Doped Interfaces

Mohsin Aziz, Jorlandio Francisco Felix, Noor Al Saqri, Dler Jameel, Faisal Saleh Al Mashary, Hind Mohammed Albalawi, Haifaa Mohammed Abdullah Alghamdi, David Taylor, Mohamed Henini

Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A detailed study of interface states in interfacial misfit (IMF) grown GaSb on GaAs substrates is presented. Two types of structures, namely, uncompensated and Te compensated, are investigated using current-voltage, capacitance-frequency, conductance-frequency, and deep level transient spectroscopy techniques. Our studies reveal that incorporation of Te at the interface (IMF) causes a degradation of the Te-compensated devices. A higher number of electrical active defects and higher value of interface states are detected in Te-compensated IMF GaSb/GaAs devices compared with as-grown IMF GaSb/GaAs devices.

Original language	English
Article number	7312966
Pages (from-to)	3980-3986
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	62
Issue number	12
DOIs	https://doi.org/10.1109/TED.2015.2488904
Publication status	Published - Dec 2015

Keywords

Capacitance-frequency (C-F)
capacitance-voltage (C-V)
current-voltage (I-V)
deep level transient spectroscopy (DLTS).

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/TED.2015.2488904

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title = "Electrical Behavior of MBE Grown Interfacial Misfit GaSb/GaAs Heterostructures with and Without Te-Doped Interfaces",

abstract = "A detailed study of interface states in interfacial misfit (IMF) grown GaSb on GaAs substrates is presented. Two types of structures, namely, uncompensated and Te compensated, are investigated using current-voltage, capacitance-frequency, conductance-frequency, and deep level transient spectroscopy techniques. Our studies reveal that incorporation of Te at the interface (IMF) causes a degradation of the Te-compensated devices. A higher number of electrical active defects and higher value of interface states are detected in Te-compensated IMF GaSb/GaAs devices compared with as-grown IMF GaSb/GaAs devices.",

keywords = "Capacitance-frequency (C-F), capacitance-voltage (C-V), current-voltage (I-V), deep level transient spectroscopy (DLTS).",

author = "Mohsin Aziz and Felix, {Jorlandio Francisco} and {Al Saqri}, Noor and Dler Jameel and Mashary, {Faisal Saleh Al} and Albalawi, {Hind Mohammed} and Alghamdi, {Haifaa Mohammed Abdullah} and David Taylor and Mohamed Henini",

year = "2015",

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doi = "10.1109/TED.2015.2488904",

language = "English",

volume = "62",

pages = "3980--3986",

journal = "IEEE Transactions on Electron Devices",

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T1 - Electrical Behavior of MBE Grown Interfacial Misfit GaSb/GaAs Heterostructures with and Without Te-Doped Interfaces

AU - Aziz, Mohsin

AU - Felix, Jorlandio Francisco

AU - Al Saqri, Noor

AU - Jameel, Dler

AU - Mashary, Faisal Saleh Al

AU - Albalawi, Hind Mohammed

AU - Alghamdi, Haifaa Mohammed Abdullah

AU - Taylor, David

AU - Henini, Mohamed

PY - 2015/12

Y1 - 2015/12

N2 - A detailed study of interface states in interfacial misfit (IMF) grown GaSb on GaAs substrates is presented. Two types of structures, namely, uncompensated and Te compensated, are investigated using current-voltage, capacitance-frequency, conductance-frequency, and deep level transient spectroscopy techniques. Our studies reveal that incorporation of Te at the interface (IMF) causes a degradation of the Te-compensated devices. A higher number of electrical active defects and higher value of interface states are detected in Te-compensated IMF GaSb/GaAs devices compared with as-grown IMF GaSb/GaAs devices.

AB - A detailed study of interface states in interfacial misfit (IMF) grown GaSb on GaAs substrates is presented. Two types of structures, namely, uncompensated and Te compensated, are investigated using current-voltage, capacitance-frequency, conductance-frequency, and deep level transient spectroscopy techniques. Our studies reveal that incorporation of Te at the interface (IMF) causes a degradation of the Te-compensated devices. A higher number of electrical active defects and higher value of interface states are detected in Te-compensated IMF GaSb/GaAs devices compared with as-grown IMF GaSb/GaAs devices.

KW - Capacitance-frequency (C-F)

KW - capacitance-voltage (C-V)

KW - current-voltage (I-V)

KW - deep level transient spectroscopy (DLTS).

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ER -

Electrical Behavior of MBE Grown Interfacial Misfit GaSb/GaAs Heterostructures with and Without Te-Doped Interfaces

Abstract

Keywords

ASJC Scopus subject areas

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