Abstract
A detailed study of interface states in interfacial misfit (IMF) grown GaSb on GaAs substrates is presented. Two types of structures, namely, uncompensated and Te compensated, are investigated using current-voltage, capacitance-frequency, conductance-frequency, and deep level transient spectroscopy techniques. Our studies reveal that incorporation of Te at the interface (IMF) causes a degradation of the Te-compensated devices. A higher number of electrical active defects and higher value of interface states are detected in Te-compensated IMF GaSb/GaAs devices compared with as-grown IMF GaSb/GaAs devices.
Original language | English |
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Article number | 7312966 |
Pages (from-to) | 3980-3986 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 62 |
Issue number | 12 |
DOIs | |
Publication status | Published - Dec 2015 |
Externally published | Yes |
Keywords
- Capacitance-frequency (C-F)
- capacitance-voltage (C-V)
- current-voltage (I-V)
- deep level transient spectroscopy (DLTS).
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering