Effects of Ta seed layer and annealing on magnetoresistance in CoFePd -based pseudo-spin-valves with perpendicular anisotropy

Randall Law, Rachid Sbiaa, Thomas Liew, Tow Chong Chong

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

We have studied the switching characteristics and magnetoresistance of pseudo-spin-valves with perpendicular anisotropy based on CoFePd multilayers. In unpatterned thin films without exchange biasing, a maximum current-in-plane giant magnetoresistance of 7% was achieved, the highest reported to date in perpendicular pseudo-spin-valves. A Ta seed layer and the fcc (111) orientation of Pd was shown to be important in order to achieve good perpendicular anisotropy and sharp switching behavior. The improvement in perpendicular anisotropy and decay in magnetoresistance upon postdeposition annealing have been attributed to the formation of CoPd alloys at the CoFePd interfaces.

Original languageEnglish
Article number242504
JournalApplied Physics Letters
Volume91
Issue number24
DOIs
Publication statusPublished - 2007

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seeds
anisotropy
annealing
decay
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effects of Ta seed layer and annealing on magnetoresistance in CoFePd -based pseudo-spin-valves with perpendicular anisotropy. / Law, Randall; Sbiaa, Rachid; Liew, Thomas; Chong, Tow Chong.

In: Applied Physics Letters, Vol. 91, No. 24, 242504, 2007.

Research output: Contribution to journalArticle

@article{1b248b857046454d9f1014971ebc3ae1,
title = "Effects of Ta seed layer and annealing on magnetoresistance in CoFePd -based pseudo-spin-valves with perpendicular anisotropy",
abstract = "We have studied the switching characteristics and magnetoresistance of pseudo-spin-valves with perpendicular anisotropy based on CoFePd multilayers. In unpatterned thin films without exchange biasing, a maximum current-in-plane giant magnetoresistance of 7{\%} was achieved, the highest reported to date in perpendicular pseudo-spin-valves. A Ta seed layer and the fcc (111) orientation of Pd was shown to be important in order to achieve good perpendicular anisotropy and sharp switching behavior. The improvement in perpendicular anisotropy and decay in magnetoresistance upon postdeposition annealing have been attributed to the formation of CoPd alloys at the CoFePd interfaces.",
author = "Randall Law and Rachid Sbiaa and Thomas Liew and Chong, {Tow Chong}",
year = "2007",
doi = "10.1063/1.2824832",
language = "English",
volume = "91",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "24",

}

TY - JOUR

T1 - Effects of Ta seed layer and annealing on magnetoresistance in CoFePd -based pseudo-spin-valves with perpendicular anisotropy

AU - Law, Randall

AU - Sbiaa, Rachid

AU - Liew, Thomas

AU - Chong, Tow Chong

PY - 2007

Y1 - 2007

N2 - We have studied the switching characteristics and magnetoresistance of pseudo-spin-valves with perpendicular anisotropy based on CoFePd multilayers. In unpatterned thin films without exchange biasing, a maximum current-in-plane giant magnetoresistance of 7% was achieved, the highest reported to date in perpendicular pseudo-spin-valves. A Ta seed layer and the fcc (111) orientation of Pd was shown to be important in order to achieve good perpendicular anisotropy and sharp switching behavior. The improvement in perpendicular anisotropy and decay in magnetoresistance upon postdeposition annealing have been attributed to the formation of CoPd alloys at the CoFePd interfaces.

AB - We have studied the switching characteristics and magnetoresistance of pseudo-spin-valves with perpendicular anisotropy based on CoFePd multilayers. In unpatterned thin films without exchange biasing, a maximum current-in-plane giant magnetoresistance of 7% was achieved, the highest reported to date in perpendicular pseudo-spin-valves. A Ta seed layer and the fcc (111) orientation of Pd was shown to be important in order to achieve good perpendicular anisotropy and sharp switching behavior. The improvement in perpendicular anisotropy and decay in magnetoresistance upon postdeposition annealing have been attributed to the formation of CoPd alloys at the CoFePd interfaces.

UR - http://www.scopus.com/inward/record.url?scp=37149020731&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37149020731&partnerID=8YFLogxK

U2 - 10.1063/1.2824832

DO - 10.1063/1.2824832

M3 - Article

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

M1 - 242504

ER -