Effects of Ta seed layer and annealing on magnetoresistance in CoFePd -based pseudo-spin-valves with perpendicular anisotropy

Randall Law, Rachid Sbiaa, Thomas Liew, Tow Chong Chong

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Abstract

We have studied the switching characteristics and magnetoresistance of pseudo-spin-valves with perpendicular anisotropy based on CoFePd multilayers. In unpatterned thin films without exchange biasing, a maximum current-in-plane giant magnetoresistance of 7% was achieved, the highest reported to date in perpendicular pseudo-spin-valves. A Ta seed layer and the fcc (111) orientation of Pd was shown to be important in order to achieve good perpendicular anisotropy and sharp switching behavior. The improvement in perpendicular anisotropy and decay in magnetoresistance upon postdeposition annealing have been attributed to the formation of CoPd alloys at the CoFePd interfaces.

Original languageEnglish
Article number242504
JournalApplied Physics Letters
Volume91
Issue number24
DOIs
Publication statusPublished - 2007

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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