Effect of temperature and inhomogeneity on the yield of PtSi-n-Si photodetectors

A. Sellai, P. Dawson

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The temperature dependence of the current-voltage characteristics of a PtSi/Si Schottky detector is investigated between 20 and 300 K, a temperature range that is much wider than what is usually reported in literature. The data is satisfactorily interpreted on the basis of a thermionic emission mechanism across an inhomogeneous barrier. The Schottky barrier inhomogeneities are shown to obey a single Gaussian distribution with a mean barrier height of 0.76 eV and a standard deviation of 30 meV at zero bias. The calculated detector's efficiency, while taking the barrier distribution into account, shows an increase with decreasing temperature that can be considered overall as marginal but becomes much more significant below 60 K and at wavelengths near the cut-off edge.

Original languageEnglish
Pages (from-to)166-170
Number of pages5
JournalJournal of Crystal Growth
Volume288
Issue number1
DOIs
Publication statusPublished - Feb 2 2006

Fingerprint

Photodetectors
photometers
inhomogeneity
Detectors
Thermionic emission
Gaussian distribution
Current voltage characteristics
Temperature
temperature
thermionic emission
detectors
normal density functions
standard deviation
Wavelength
cut-off
temperature dependence
electric potential
wavelengths

Keywords

  • A1. Interfaces
  • A3. Schottky barriers
  • B3. Photodetectors

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Effect of temperature and inhomogeneity on the yield of PtSi-n-Si photodetectors. / Sellai, A.; Dawson, P.

In: Journal of Crystal Growth, Vol. 288, No. 1, 02.02.2006, p. 166-170.

Research output: Contribution to journalArticle

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