Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes

A. Teffahi, D. Hamri, A. Mostefa, A. Saidane, N. Al Saqri, J. F. Felix, M. Henini

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G/ω-V-f) measurements at room temperature are used to study 50 kGy 60Co γ-ray electrical properties irradiation dependence of Ti/Au/GaAs1-xNx Schottky diodes with 0.2%; 0.4%; 0.8% and 1.2% nitrogen dilution. This γ-ray irradiation induces a permanent damage that has increased ideality factor and series resistance for all samples. It was accompanied by a decrease in Schottky barrier height with nitrogen content up to 0.4%N and remained constant thereafter. Radiation was also found to degrade the reverse leakage current. At high frequency (1 MHz), capacitance and conductance decreased after radiation due to a decrease in net doping concentration. Interface state density and series resistance were determined from C-V-f and G/ω-V-f characteristics using Hill-Coleman methods. Interface states density exponentially decreased with increasing frequency confirming the behavior of interface traps response to ac signal. Series resistance increases after irradiation is attributed to carrier's removal effect and mobility degradation. It has two peaks in the accumulation and inversion region for some diodes (0.4%N, 0.8%N). γ-ray irradiation produced traps levels and recombination centers that reduce relaxation time. An increase in %N content can impede irradiation damage with even some compensation when the percent of diluted nitrogen is high (1.2%N).

Original languageEnglish
Pages (from-to)850-858
Number of pages9
JournalCurrent Applied Physics
Volume16
Issue number8
DOIs
Publication statusPublished - Aug 1 2016

Fingerprint

Schottky diodes
rays
Diodes
Electric properties
electrical properties
Irradiation
irradiation
Capacitance
Nitrogen
Interface states
capacitance
Electric potential
electric potential
nitrogen
Hill method
traps
damage
Radiation
radiation
Leakage currents

Keywords

  • C-V-f
  • G/ω-V-f measurements
  • I-V
  • Ideality factor
  • Schottky diode
  • γ-ray irradiation

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes. / Teffahi, A.; Hamri, D.; Mostefa, A.; Saidane, A.; Al Saqri, N.; Felix, J. F.; Henini, M.

In: Current Applied Physics, Vol. 16, No. 8, 01.08.2016, p. 850-858.

Research output: Contribution to journalArticle

Teffahi, A. ; Hamri, D. ; Mostefa, A. ; Saidane, A. ; Al Saqri, N. ; Felix, J. F. ; Henini, M. / Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes. In: Current Applied Physics. 2016 ; Vol. 16, No. 8. pp. 850-858.
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