TY - JOUR
T1 - Effect of post-growth annealing treatment on interfacial misfit GaSb/GaAs heterostructures
AU - Aziz, M.
AU - Mesli, A.
AU - Felix, J. F.
AU - Jameel, D.
AU - Al Saqri, N.
AU - Taylor, D.
AU - Henini, M.
N1 - Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.
PY - 2015/5/17
Y1 - 2015/5/17
N2 - Post-growth annealing treatments in the range 400-600 °C are performed on GaSb/GaAs Interfacial Misfit grown samples. Current density-voltage (J-V), Capacitance-voltage (C-V), capacitance-frequency (C-F) and Deep Level Transient Spectroscopy (DLTS) measurements are performed on as-grown and annealed samples. Our studies show that possible defect compensation is observed with the annealing treatments, resulting in a significant improvement in the performances of the devices.
AB - Post-growth annealing treatments in the range 400-600 °C are performed on GaSb/GaAs Interfacial Misfit grown samples. Current density-voltage (J-V), Capacitance-voltage (C-V), capacitance-frequency (C-F) and Deep Level Transient Spectroscopy (DLTS) measurements are performed on as-grown and annealed samples. Our studies show that possible defect compensation is observed with the annealing treatments, resulting in a significant improvement in the performances of the devices.
KW - A1. Defects
KW - A1. EL2
KW - A1. Interfacial misfit
KW - B1. Gallium arsenide
UR - http://www.scopus.com/inward/record.url?scp=84929346930&partnerID=8YFLogxK
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U2 - 10.1016/j.jcrysgro.2015.04.039
DO - 10.1016/j.jcrysgro.2015.04.039
M3 - Article
AN - SCOPUS:84929346930
SN - 0022-0248
VL - 424
SP - 5
EP - 10
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -