Effect of post-growth annealing treatment on interfacial misfit GaSb/GaAs heterostructures

M. Aziz, A. Mesli, J. F. Felix, D. Jameel, N. Al Saqri, D. Taylor, M. Henini

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Post-growth annealing treatments in the range 400-600 °C are performed on GaSb/GaAs Interfacial Misfit grown samples. Current density-voltage (J-V), Capacitance-voltage (C-V), capacitance-frequency (C-F) and Deep Level Transient Spectroscopy (DLTS) measurements are performed on as-grown and annealed samples. Our studies show that possible defect compensation is observed with the annealing treatments, resulting in a significant improvement in the performances of the devices.

Original languageEnglish
Pages (from-to)5-10
Number of pages6
JournalJournal of Crystal Growth
Volume424
DOIs
Publication statusPublished - May 17 2015

Keywords

  • A1. Defects
  • A1. EL2
  • A1. Interfacial misfit
  • B1. Gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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