Effect of post-growth annealing treatment on interfacial misfit GaSb/GaAs heterostructures

M. Aziz, A. Mesli, J. F. Felix, D. Jameel, N. Al Saqri, D. Taylor, M. Henini

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Post-growth annealing treatments in the range 400-600 °C are performed on GaSb/GaAs Interfacial Misfit grown samples. Current density-voltage (J-V), Capacitance-voltage (C-V), capacitance-frequency (C-F) and Deep Level Transient Spectroscopy (DLTS) measurements are performed on as-grown and annealed samples. Our studies show that possible defect compensation is observed with the annealing treatments, resulting in a significant improvement in the performances of the devices.

Original languageEnglish
Pages (from-to)5-10
Number of pages6
JournalJournal of Crystal Growth
Volume424
DOIs
Publication statusPublished - May 17 2015

Fingerprint

Heterojunctions
Capacitance
capacitance
Annealing
Deep level transient spectroscopy
annealing
Electric potential
electric potential
Current density
current density
Defects
defects
spectroscopy
gallium arsenide
Compensation and Redress

Keywords

  • A1. Defects
  • A1. EL2
  • A1. Interfacial misfit
  • B1. Gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Effect of post-growth annealing treatment on interfacial misfit GaSb/GaAs heterostructures. / Aziz, M.; Mesli, A.; Felix, J. F.; Jameel, D.; Al Saqri, N.; Taylor, D.; Henini, M.

In: Journal of Crystal Growth, Vol. 424, 17.05.2015, p. 5-10.

Research output: Contribution to journalArticle

Aziz, M. ; Mesli, A. ; Felix, J. F. ; Jameel, D. ; Al Saqri, N. ; Taylor, D. ; Henini, M. / Effect of post-growth annealing treatment on interfacial misfit GaSb/GaAs heterostructures. In: Journal of Crystal Growth. 2015 ; Vol. 424. pp. 5-10.
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AU - Taylor, D.

AU - Henini, M.

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