Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films

Faisal S. Al mashary, Suelen de Castro, Arlon Fernando da Silva, Jorlandio Francisco Felix, Marcelo Rizzo Piton, Helder Vinícius Avanço Galeti, Ariano De Giovanni Rodrigues, Yara Galvão Gobato, Noor Alhuda Al Saqri, Mohamed Henini, Maryam M. Al huwayz, Abdulrahman M. Albadri, Ahmed Y. Alyamani, Hamad A. Albrathen, Sami A. Alhusaini, Khalid M. Aljaber, Ali Z. Alanazi, Fahad S. Alghamdi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have investigated the effect of the growth techniques on the structural, the electrically and optically active defects in Indium doped TiO2 thin films grown by pulsed laser deposition (PLD) and sputtering techniques. X-ray diffraction (XRD) and Raman spectroscopy patterns revealed both rutile and anatase phases for the sputtering samples. On the other hand, only the anatase phase was observed for the PLD samples. The photoluminescence (PL) spectra have unveiled several peaks which were explained by defect related optical transitions. Particularly, the PL bands are fully consistent with anatase/rutile TiO2 phases and the formation of In2O3 during the preparation of our samples. It was also observed that at −4 V reverse bias, the PLD samples have lower leakage currents (∼1.4 × 10−7 A) as compared to the sputtering samples (∼5.9 × 10−7 A). In addition, the PLD samples exhibited lower ideality factors and higher barrier heights as compared to those grown by sputtering. Finally, the Deep Level Transient Spectroscopy (DLTS) measurements have shown only one defect in the PLD samples whereas five defects have been detected in the sputtering samples. Therefore, our results provide strong evidence that the PLD technique is better suited for the growth of In-doped TiO2 thin films.

Original languageEnglish
Pages (from-to)194-203
Number of pages10
JournalJournal of Alloys and Compounds
Volume766
DOIs
Publication statusPublished - Oct 25 2018

Fingerprint

Indium
Pulsed laser deposition
Structural properties
Electric properties
Optical properties
Sputtering
Thin films
Titanium dioxide
Defects
Photoluminescence
Deep level transient spectroscopy
Optical transitions
Leakage currents
Raman spectroscopy
titanium dioxide
X ray diffraction

Keywords

  • Deep level transient spectroscopy
  • In-doped TiO
  • Photoluminescence
  • Pulsed laser deposition
  • Sputtering
  • XRD

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Al mashary, F. S., de Castro, S., da Silva, A. F., Felix, J. F., Piton, M. R., Galeti, H. V. A., ... Alghamdi, F. S. (2018). Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films. Journal of Alloys and Compounds, 766, 194-203. https://doi.org/10.1016/j.jallcom.2018.06.360

Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films. / Al mashary, Faisal S.; de Castro, Suelen; da Silva, Arlon Fernando; Felix, Jorlandio Francisco; Piton, Marcelo Rizzo; Galeti, Helder Vinícius Avanço; De Giovanni Rodrigues, Ariano; Gobato, Yara Galvão; Al Saqri, Noor Alhuda; Henini, Mohamed; Al huwayz, Maryam M.; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; Albrathen, Hamad A.; Alhusaini, Sami A.; Aljaber, Khalid M.; Alanazi, Ali Z.; Alghamdi, Fahad S.

In: Journal of Alloys and Compounds, Vol. 766, 25.10.2018, p. 194-203.

Research output: Contribution to journalArticle

Al mashary, FS, de Castro, S, da Silva, AF, Felix, JF, Piton, MR, Galeti, HVA, De Giovanni Rodrigues, A, Gobato, YG, Al Saqri, NA, Henini, M, Al huwayz, MM, Albadri, AM, Alyamani, AY, Albrathen, HA, Alhusaini, SA, Aljaber, KM, Alanazi, AZ & Alghamdi, FS 2018, 'Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films', Journal of Alloys and Compounds, vol. 766, pp. 194-203. https://doi.org/10.1016/j.jallcom.2018.06.360
Al mashary, Faisal S. ; de Castro, Suelen ; da Silva, Arlon Fernando ; Felix, Jorlandio Francisco ; Piton, Marcelo Rizzo ; Galeti, Helder Vinícius Avanço ; De Giovanni Rodrigues, Ariano ; Gobato, Yara Galvão ; Al Saqri, Noor Alhuda ; Henini, Mohamed ; Al huwayz, Maryam M. ; Albadri, Abdulrahman M. ; Alyamani, Ahmed Y. ; Albrathen, Hamad A. ; Alhusaini, Sami A. ; Aljaber, Khalid M. ; Alanazi, Ali Z. ; Alghamdi, Fahad S. / Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films. In: Journal of Alloys and Compounds. 2018 ; Vol. 766. pp. 194-203.
@article{76f33dd4f38841e6997a4b574b1a692c,
title = "Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films",
abstract = "We have investigated the effect of the growth techniques on the structural, the electrically and optically active defects in Indium doped TiO2 thin films grown by pulsed laser deposition (PLD) and sputtering techniques. X-ray diffraction (XRD) and Raman spectroscopy patterns revealed both rutile and anatase phases for the sputtering samples. On the other hand, only the anatase phase was observed for the PLD samples. The photoluminescence (PL) spectra have unveiled several peaks which were explained by defect related optical transitions. Particularly, the PL bands are fully consistent with anatase/rutile TiO2 phases and the formation of In2O3 during the preparation of our samples. It was also observed that at −4 V reverse bias, the PLD samples have lower leakage currents (∼1.4 × 10−7 A) as compared to the sputtering samples (∼5.9 × 10−7 A). In addition, the PLD samples exhibited lower ideality factors and higher barrier heights as compared to those grown by sputtering. Finally, the Deep Level Transient Spectroscopy (DLTS) measurements have shown only one defect in the PLD samples whereas five defects have been detected in the sputtering samples. Therefore, our results provide strong evidence that the PLD technique is better suited for the growth of In-doped TiO2 thin films.",
keywords = "Deep level transient spectroscopy, In-doped TiO, Photoluminescence, Pulsed laser deposition, Sputtering, XRD",
author = "{Al mashary}, {Faisal S.} and {de Castro}, Suelen and {da Silva}, {Arlon Fernando} and Felix, {Jorlandio Francisco} and Piton, {Marcelo Rizzo} and Galeti, {Helder Vin{\'i}cius Avan{\cc}o} and {De Giovanni Rodrigues}, Ariano and Gobato, {Yara Galv{\~a}o} and {Al Saqri}, {Noor Alhuda} and Mohamed Henini and {Al huwayz}, {Maryam M.} and Albadri, {Abdulrahman M.} and Alyamani, {Ahmed Y.} and Albrathen, {Hamad A.} and Alhusaini, {Sami A.} and Aljaber, {Khalid M.} and Alanazi, {Ali Z.} and Alghamdi, {Fahad S.}",
year = "2018",
month = "10",
day = "25",
doi = "10.1016/j.jallcom.2018.06.360",
language = "English",
volume = "766",
pages = "194--203",
journal = "Journal of Alloys and Compounds",
issn = "0925-8388",
publisher = "Elsevier BV",

}

TY - JOUR

T1 - Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films

AU - Al mashary, Faisal S.

AU - de Castro, Suelen

AU - da Silva, Arlon Fernando

AU - Felix, Jorlandio Francisco

AU - Piton, Marcelo Rizzo

AU - Galeti, Helder Vinícius Avanço

AU - De Giovanni Rodrigues, Ariano

AU - Gobato, Yara Galvão

AU - Al Saqri, Noor Alhuda

AU - Henini, Mohamed

AU - Al huwayz, Maryam M.

AU - Albadri, Abdulrahman M.

AU - Alyamani, Ahmed Y.

AU - Albrathen, Hamad A.

AU - Alhusaini, Sami A.

AU - Aljaber, Khalid M.

AU - Alanazi, Ali Z.

AU - Alghamdi, Fahad S.

PY - 2018/10/25

Y1 - 2018/10/25

N2 - We have investigated the effect of the growth techniques on the structural, the electrically and optically active defects in Indium doped TiO2 thin films grown by pulsed laser deposition (PLD) and sputtering techniques. X-ray diffraction (XRD) and Raman spectroscopy patterns revealed both rutile and anatase phases for the sputtering samples. On the other hand, only the anatase phase was observed for the PLD samples. The photoluminescence (PL) spectra have unveiled several peaks which were explained by defect related optical transitions. Particularly, the PL bands are fully consistent with anatase/rutile TiO2 phases and the formation of In2O3 during the preparation of our samples. It was also observed that at −4 V reverse bias, the PLD samples have lower leakage currents (∼1.4 × 10−7 A) as compared to the sputtering samples (∼5.9 × 10−7 A). In addition, the PLD samples exhibited lower ideality factors and higher barrier heights as compared to those grown by sputtering. Finally, the Deep Level Transient Spectroscopy (DLTS) measurements have shown only one defect in the PLD samples whereas five defects have been detected in the sputtering samples. Therefore, our results provide strong evidence that the PLD technique is better suited for the growth of In-doped TiO2 thin films.

AB - We have investigated the effect of the growth techniques on the structural, the electrically and optically active defects in Indium doped TiO2 thin films grown by pulsed laser deposition (PLD) and sputtering techniques. X-ray diffraction (XRD) and Raman spectroscopy patterns revealed both rutile and anatase phases for the sputtering samples. On the other hand, only the anatase phase was observed for the PLD samples. The photoluminescence (PL) spectra have unveiled several peaks which were explained by defect related optical transitions. Particularly, the PL bands are fully consistent with anatase/rutile TiO2 phases and the formation of In2O3 during the preparation of our samples. It was also observed that at −4 V reverse bias, the PLD samples have lower leakage currents (∼1.4 × 10−7 A) as compared to the sputtering samples (∼5.9 × 10−7 A). In addition, the PLD samples exhibited lower ideality factors and higher barrier heights as compared to those grown by sputtering. Finally, the Deep Level Transient Spectroscopy (DLTS) measurements have shown only one defect in the PLD samples whereas five defects have been detected in the sputtering samples. Therefore, our results provide strong evidence that the PLD technique is better suited for the growth of In-doped TiO2 thin films.

KW - Deep level transient spectroscopy

KW - In-doped TiO

KW - Photoluminescence

KW - Pulsed laser deposition

KW - Sputtering

KW - XRD

UR - http://www.scopus.com/inward/record.url?scp=85049312011&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85049312011&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2018.06.360

DO - 10.1016/j.jallcom.2018.06.360

M3 - Article

VL - 766

SP - 194

EP - 203

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

ER -