Abstract
We have investigated the effect of the growth techniques on the structural, the electrically and optically active defects in Indium doped TiO2 thin films grown by pulsed laser deposition (PLD) and sputtering techniques. X-ray diffraction (XRD) and Raman spectroscopy patterns revealed both rutile and anatase phases for the sputtering samples. On the other hand, only the anatase phase was observed for the PLD samples. The photoluminescence (PL) spectra have unveiled several peaks which were explained by defect related optical transitions. Particularly, the PL bands are fully consistent with anatase/rutile TiO2 phases and the formation of In2O3 during the preparation of our samples. It was also observed that at −4 V reverse bias, the PLD samples have lower leakage currents (∼1.4 × 10−7 A) as compared to the sputtering samples (∼5.9 × 10−7 A). In addition, the PLD samples exhibited lower ideality factors and higher barrier heights as compared to those grown by sputtering. Finally, the Deep Level Transient Spectroscopy (DLTS) measurements have shown only one defect in the PLD samples whereas five defects have been detected in the sputtering samples. Therefore, our results provide strong evidence that the PLD technique is better suited for the growth of In-doped TiO2 thin films.
| Original language | English |
|---|---|
| Pages (from-to) | 194-203 |
| Number of pages | 10 |
| Journal | Journal of Alloys and Compounds |
| Volume | 766 |
| DOIs | |
| Publication status | Published - Oct 25 2018 |
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Keywords
- Deep level transient spectroscopy
- In-doped TiO
- Photoluminescence
- Pulsed laser deposition
- Sputtering
- XRD
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry
Cite this
Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films. / Al mashary, Faisal S.; de Castro, Suelen; da Silva, Arlon Fernando; Felix, Jorlandio Francisco; Piton, Marcelo Rizzo; Galeti, Helder Vinícius Avanço; De Giovanni Rodrigues, Ariano; Gobato, Yara Galvão; Al Saqri, Noor Alhuda; Henini, Mohamed; Al huwayz, Maryam M.; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; Albrathen, Hamad A.; Alhusaini, Sami A.; Aljaber, Khalid M.; Alanazi, Ali Z.; Alghamdi, Fahad S.
In: Journal of Alloys and Compounds, Vol. 766, 25.10.2018, p. 194-203.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films
AU - Al mashary, Faisal S.
AU - de Castro, Suelen
AU - da Silva, Arlon Fernando
AU - Felix, Jorlandio Francisco
AU - Piton, Marcelo Rizzo
AU - Galeti, Helder Vinícius Avanço
AU - De Giovanni Rodrigues, Ariano
AU - Gobato, Yara Galvão
AU - Al Saqri, Noor Alhuda
AU - Henini, Mohamed
AU - Al huwayz, Maryam M.
AU - Albadri, Abdulrahman M.
AU - Alyamani, Ahmed Y.
AU - Albrathen, Hamad A.
AU - Alhusaini, Sami A.
AU - Aljaber, Khalid M.
AU - Alanazi, Ali Z.
AU - Alghamdi, Fahad S.
PY - 2018/10/25
Y1 - 2018/10/25
N2 - We have investigated the effect of the growth techniques on the structural, the electrically and optically active defects in Indium doped TiO2 thin films grown by pulsed laser deposition (PLD) and sputtering techniques. X-ray diffraction (XRD) and Raman spectroscopy patterns revealed both rutile and anatase phases for the sputtering samples. On the other hand, only the anatase phase was observed for the PLD samples. The photoluminescence (PL) spectra have unveiled several peaks which were explained by defect related optical transitions. Particularly, the PL bands are fully consistent with anatase/rutile TiO2 phases and the formation of In2O3 during the preparation of our samples. It was also observed that at −4 V reverse bias, the PLD samples have lower leakage currents (∼1.4 × 10−7 A) as compared to the sputtering samples (∼5.9 × 10−7 A). In addition, the PLD samples exhibited lower ideality factors and higher barrier heights as compared to those grown by sputtering. Finally, the Deep Level Transient Spectroscopy (DLTS) measurements have shown only one defect in the PLD samples whereas five defects have been detected in the sputtering samples. Therefore, our results provide strong evidence that the PLD technique is better suited for the growth of In-doped TiO2 thin films.
AB - We have investigated the effect of the growth techniques on the structural, the electrically and optically active defects in Indium doped TiO2 thin films grown by pulsed laser deposition (PLD) and sputtering techniques. X-ray diffraction (XRD) and Raman spectroscopy patterns revealed both rutile and anatase phases for the sputtering samples. On the other hand, only the anatase phase was observed for the PLD samples. The photoluminescence (PL) spectra have unveiled several peaks which were explained by defect related optical transitions. Particularly, the PL bands are fully consistent with anatase/rutile TiO2 phases and the formation of In2O3 during the preparation of our samples. It was also observed that at −4 V reverse bias, the PLD samples have lower leakage currents (∼1.4 × 10−7 A) as compared to the sputtering samples (∼5.9 × 10−7 A). In addition, the PLD samples exhibited lower ideality factors and higher barrier heights as compared to those grown by sputtering. Finally, the Deep Level Transient Spectroscopy (DLTS) measurements have shown only one defect in the PLD samples whereas five defects have been detected in the sputtering samples. Therefore, our results provide strong evidence that the PLD technique is better suited for the growth of In-doped TiO2 thin films.
KW - Deep level transient spectroscopy
KW - In-doped TiO
KW - Photoluminescence
KW - Pulsed laser deposition
KW - Sputtering
KW - XRD
UR - http://www.scopus.com/inward/record.url?scp=85049312011&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85049312011&partnerID=8YFLogxK
U2 - 10.1016/j.jallcom.2018.06.360
DO - 10.1016/j.jallcom.2018.06.360
M3 - Article
AN - SCOPUS:85049312011
VL - 766
SP - 194
EP - 203
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
SN - 0925-8388
ER -