Dry release fabrication and testing of SiC electrostatic cantilever actuators

Liudi Jiang, M. Hassan, R. Cheung, A. J. Harris, J. S. Burdess, C. A. Zorman, M. Mehregany

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

This paper presents a simple, dry etching-based surface micromachining technique for the fabrication of single-layer polycrystalline 3C-SiC electrostatic actuators. The technique has utilized a single inductively coupled plasma recipe to etch and release metal patterned SiC structural layers. To demonstrate the simplicity of the process, SiC cantilever actuators with different beam lengths have been successfully fabricated using this method. By applying a combination of ac and dc voltages, the fabricated devices have been electrostatically actuated. The fundamental resonance frequencies of fabricated cantilevers with different lengths have been observed to range from 66.65 KHz to 1.729 MHz. The amplitudes of the fundamental resonance peaks with respect to the excitation voltages have also been systematically studied.

Original languageEnglish
Pages (from-to)106-111
Number of pages6
JournalMicroelectronic Engineering
Volume78-79
Issue number1-4
DOIs
Publication statusPublished - Mar 2005

Fingerprint

Electrostatics
Actuators
actuators
Electrostatic actuators
electrostatics
Surface micromachining
Fabrication
fabrication
Dry etching
Testing
Inductively coupled plasma
Electric potential
electric potential
micromachining
Metals
etching
metals
excitation

Keywords

  • Fundamental resonance frequency
  • Inductively coupled plasma
  • SiC actuator

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Jiang, L., Hassan, M., Cheung, R., Harris, A. J., Burdess, J. S., Zorman, C. A., & Mehregany, M. (2005). Dry release fabrication and testing of SiC electrostatic cantilever actuators. Microelectronic Engineering, 78-79(1-4), 106-111. https://doi.org/10.1016/j.mee.2004.12.015

Dry release fabrication and testing of SiC electrostatic cantilever actuators. / Jiang, Liudi; Hassan, M.; Cheung, R.; Harris, A. J.; Burdess, J. S.; Zorman, C. A.; Mehregany, M.

In: Microelectronic Engineering, Vol. 78-79, No. 1-4, 03.2005, p. 106-111.

Research output: Contribution to journalArticle

Jiang, L, Hassan, M, Cheung, R, Harris, AJ, Burdess, JS, Zorman, CA & Mehregany, M 2005, 'Dry release fabrication and testing of SiC electrostatic cantilever actuators', Microelectronic Engineering, vol. 78-79, no. 1-4, pp. 106-111. https://doi.org/10.1016/j.mee.2004.12.015
Jiang, Liudi ; Hassan, M. ; Cheung, R. ; Harris, A. J. ; Burdess, J. S. ; Zorman, C. A. ; Mehregany, M. / Dry release fabrication and testing of SiC electrostatic cantilever actuators. In: Microelectronic Engineering. 2005 ; Vol. 78-79, No. 1-4. pp. 106-111.
@article{90e2a0f88c9d495b9fdf88efcbd69977,
title = "Dry release fabrication and testing of SiC electrostatic cantilever actuators",
abstract = "This paper presents a simple, dry etching-based surface micromachining technique for the fabrication of single-layer polycrystalline 3C-SiC electrostatic actuators. The technique has utilized a single inductively coupled plasma recipe to etch and release metal patterned SiC structural layers. To demonstrate the simplicity of the process, SiC cantilever actuators with different beam lengths have been successfully fabricated using this method. By applying a combination of ac and dc voltages, the fabricated devices have been electrostatically actuated. The fundamental resonance frequencies of fabricated cantilevers with different lengths have been observed to range from 66.65 KHz to 1.729 MHz. The amplitudes of the fundamental resonance peaks with respect to the excitation voltages have also been systematically studied.",
keywords = "Fundamental resonance frequency, Inductively coupled plasma, SiC actuator",
author = "Liudi Jiang and M. Hassan and R. Cheung and Harris, {A. J.} and Burdess, {J. S.} and Zorman, {C. A.} and M. Mehregany",
year = "2005",
month = "3",
doi = "10.1016/j.mee.2004.12.015",
language = "English",
volume = "78-79",
pages = "106--111",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Dry release fabrication and testing of SiC electrostatic cantilever actuators

AU - Jiang, Liudi

AU - Hassan, M.

AU - Cheung, R.

AU - Harris, A. J.

AU - Burdess, J. S.

AU - Zorman, C. A.

AU - Mehregany, M.

PY - 2005/3

Y1 - 2005/3

N2 - This paper presents a simple, dry etching-based surface micromachining technique for the fabrication of single-layer polycrystalline 3C-SiC electrostatic actuators. The technique has utilized a single inductively coupled plasma recipe to etch and release metal patterned SiC structural layers. To demonstrate the simplicity of the process, SiC cantilever actuators with different beam lengths have been successfully fabricated using this method. By applying a combination of ac and dc voltages, the fabricated devices have been electrostatically actuated. The fundamental resonance frequencies of fabricated cantilevers with different lengths have been observed to range from 66.65 KHz to 1.729 MHz. The amplitudes of the fundamental resonance peaks with respect to the excitation voltages have also been systematically studied.

AB - This paper presents a simple, dry etching-based surface micromachining technique for the fabrication of single-layer polycrystalline 3C-SiC electrostatic actuators. The technique has utilized a single inductively coupled plasma recipe to etch and release metal patterned SiC structural layers. To demonstrate the simplicity of the process, SiC cantilever actuators with different beam lengths have been successfully fabricated using this method. By applying a combination of ac and dc voltages, the fabricated devices have been electrostatically actuated. The fundamental resonance frequencies of fabricated cantilevers with different lengths have been observed to range from 66.65 KHz to 1.729 MHz. The amplitudes of the fundamental resonance peaks with respect to the excitation voltages have also been systematically studied.

KW - Fundamental resonance frequency

KW - Inductively coupled plasma

KW - SiC actuator

UR - http://www.scopus.com/inward/record.url?scp=14944384276&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=14944384276&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2004.12.015

DO - 10.1016/j.mee.2004.12.015

M3 - Article

VL - 78-79

SP - 106

EP - 111

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 1-4

ER -