Abstract
This paper presents a simple, dry etching-based surface micromachining technique for the fabrication of single-layer polycrystalline 3C-SiC electrostatic actuators. The technique has utilized a single inductively coupled plasma recipe to etch and release metal patterned SiC structural layers. To demonstrate the simplicity of the process, SiC cantilever actuators with different beam lengths have been successfully fabricated using this method. By applying a combination of ac and dc voltages, the fabricated devices have been electrostatically actuated. The fundamental resonance frequencies of fabricated cantilevers with different lengths have been observed to range from 66.65 KHz to 1.729 MHz. The amplitudes of the fundamental resonance peaks with respect to the excitation voltages have also been systematically studied.
Original language | English |
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Pages (from-to) | 106-111 |
Number of pages | 6 |
Journal | Microelectronic Engineering |
Volume | 78-79 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - Mar 2005 |
Externally published | Yes |
Event | Proceedings of the 30th International Conference on Micro- and Nano-Engineering - Duration: Sept 19 2004 → Sept 22 2004 |
Keywords
- Fundamental resonance frequency
- Inductively coupled plasma
- SiC actuator
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering