Double-barrier resonant tunnelling diode three-state logic

A. Sellai*, M. S. Raven, J. M. Chamberlain, M. Henini, O. H. Hughes, D. P. Steenson

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Citations (Scopus)


Primary three-state logic circuits (inverters, OR gates and flip-flops) have been produced using double-barrier GaAs/AlGaAs resonant tunnelling diodes. Circuit details, waveforms and three-state logic operations are described.

Original languageEnglish
Pages (from-to)61-62
Number of pages2
JournalElectronics Letters
Issue number1
Publication statusPublished - Jan 4 1990

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Sellai, A., Raven, M. S., Chamberlain, J. M., Henini, M., Hughes, O. H., & Steenson, D. P. (1990). Double-barrier resonant tunnelling diode three-state logic. Electronics Letters, 26(1), 61-62.