Double-Barrier Resonant Tunnelling Diode Three-State Logic

A. Sellai; M. S. Raven; D. P. Steenson; J. M. Chamberlain; M. Henini; O. H. Hughes

doi:10.1049/el:19900040

Double-Barrier Resonant Tunnelling Diode Three-State Logic

A. Sellai, M. S. Raven, D. P. Steenson, J. M. Chamberlain, M. Henini, O. H. Hughes

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Primary three-state logic circuits (inverters, OR gates and flip-flops) have been produced using double-barrier GaAs/AlGaAs resonant tunnelling diodes. Circuit details, waveforms and three-state logic operations are described.

Original language	English
Pages (from-to)	61-62
Number of pages	2
Journal	Electronics Letters
Volume	26
Issue number	1
DOIs	https://doi.org/10.1049/el:19900040
Publication status	Published - 1990
Externally published	Yes

Keywords

Logic circuits
Logic devices
Multivalued logic
Resonant tunnelling
Semiconductor devices and materials
Superlattices
Tunnel diodes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19900040

Cite this

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title = "Double-Barrier Resonant Tunnelling Diode Three-State Logic",

abstract = "Primary three-state logic circuits (inverters, OR gates and flip-flops) have been produced using double-barrier GaAs/AlGaAs resonant tunnelling diodes. Circuit details, waveforms and three-state logic operations are described.",

keywords = "Logic circuits, Logic devices, Multivalued logic, Resonant tunnelling, Semiconductor devices and materials, Superlattices, Tunnel diodes",

author = "A. Sellai and Raven, {M. S.} and Steenson, {D. P.} and Chamberlain, {J. M.} and M. Henini and Hughes, {O. H.}",

year = "1990",

doi = "10.1049/el:19900040",

language = "English",

volume = "26",

pages = "61--62",

journal = "Electronics Letters",

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publisher = "Institution of Engineering and Technology",

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T1 - Double-Barrier Resonant Tunnelling Diode Three-State Logic

AU - Sellai, A.

AU - Raven, M. S.

AU - Steenson, D. P.

AU - Chamberlain, J. M.

AU - Henini, M.

AU - Hughes, O. H.

PY - 1990

Y1 - 1990

N2 - Primary three-state logic circuits (inverters, OR gates and flip-flops) have been produced using double-barrier GaAs/AlGaAs resonant tunnelling diodes. Circuit details, waveforms and three-state logic operations are described.

AB - Primary three-state logic circuits (inverters, OR gates and flip-flops) have been produced using double-barrier GaAs/AlGaAs resonant tunnelling diodes. Circuit details, waveforms and three-state logic operations are described.

KW - Logic circuits

KW - Logic devices

KW - Multivalued logic

KW - Resonant tunnelling

KW - Semiconductor devices and materials

KW - Superlattices

KW - Tunnel diodes

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Double-Barrier Resonant Tunnelling Diode Three-State Logic

Abstract

Keywords

ASJC Scopus subject areas

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