Double-barrier resonant tunnelling diode three-state logic

A. Sellai, M. S. Raven, J. M. Chamberlain, M. Henini, O. H. Hughes, D. P. Steenson

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Primary three-state logic circuits (inverters, OR gates and flip-flops) have been produced using double-barrier GaAs/AlGaAs resonant tunnelling diodes. Circuit details, waveforms and three-state logic operations are described.

Original languageEnglish
Pages (from-to)61-62
Number of pages2
JournalElectronics Letters
Volume26
Issue number1
Publication statusPublished - Jan 4 1990

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Resonant tunneling diodes
Flip flop circuits
Logic circuits
Networks (circuits)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Sellai, A., Raven, M. S., Chamberlain, J. M., Henini, M., Hughes, O. H., & Steenson, D. P. (1990). Double-barrier resonant tunnelling diode three-state logic. Electronics Letters, 26(1), 61-62.

Double-barrier resonant tunnelling diode three-state logic. / Sellai, A.; Raven, M. S.; Chamberlain, J. M.; Henini, M.; Hughes, O. H.; Steenson, D. P.

In: Electronics Letters, Vol. 26, No. 1, 04.01.1990, p. 61-62.

Research output: Contribution to journalArticle

Sellai, A, Raven, MS, Chamberlain, JM, Henini, M, Hughes, OH & Steenson, DP 1990, 'Double-barrier resonant tunnelling diode three-state logic', Electronics Letters, vol. 26, no. 1, pp. 61-62.
Sellai A, Raven MS, Chamberlain JM, Henini M, Hughes OH, Steenson DP. Double-barrier resonant tunnelling diode three-state logic. Electronics Letters. 1990 Jan 4;26(1):61-62.
Sellai, A. ; Raven, M. S. ; Chamberlain, J. M. ; Henini, M. ; Hughes, O. H. ; Steenson, D. P. / Double-barrier resonant tunnelling diode three-state logic. In: Electronics Letters. 1990 ; Vol. 26, No. 1. pp. 61-62.
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