Domain Wall Motion Control for Racetrack Memory Applications

Durgesh Kumar, Tianli Jin, S. Al Risi, Rachid Sbiaa, W. S. Lew, S. N. Piramanayagam

Research output: Contribution to journalArticle

Abstract

Increasing demand for large capacity data storage can only be fulfilled by hard disk drives (HDDs) and to some extent by solid-state drives (SSDs). However, HDDs are favorable in many applications, as they are approximately 5-10 times cheaper than SSDs. Attempts are being made to increase the capacity of HDDs by technologies such as heat-assisted magnetic recording and microwave assisted magnetic recording. However, increasing the capacity has been a slow process and there are limitations in achieving areal density above 10 Tbpsi. Thus, the introduction of new technologies is important for attaining high capacity. In this scenario, domain wall (DW) memory is a potential candidate, but there are still many unsolved issues. One of these is ensuring controlled and reliable motion of DWs along the nanowire. In this paper, we provide an overview of existing technologies and our attempts to control DW motion. Many methods of fabricating pinning centers have been proposed and demonstrated. These methods can mainly be categorized as 1) geometrical and 2) non-geometrical methods. In the first part, we review the geometrical approach to pin DWs. Later, we provide an overview of our approaches to create pinning centers using non-geometrical means. Non-geometrical approach provides more advantages as it provides a variety of choices to tailor the properties. In particular, this approach suits scalability.

Original languageEnglish
JournalIEEE Transactions on Magnetics
DOIs
Publication statusAccepted/In press - Jan 1 2018

Fingerprint

Hard disk storage
Domain walls
Motion control
Magnetic recording
Data storage equipment
Nanowires
Scalability
Microwaves

Keywords

  • Domain wall (DW) memory
  • DW pinning
  • geometrical pinning
  • Magnetic domains
  • Magnetic tunneling
  • Magnetosphere
  • Nanoscale devices
  • non-geometrical pinning
  • Perpendicular magnetic anisotropy
  • Wires

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Domain Wall Motion Control for Racetrack Memory Applications. / Kumar, Durgesh; Jin, Tianli; Al Risi, S.; Sbiaa, Rachid; Lew, W. S.; Piramanayagam, S. N.

In: IEEE Transactions on Magnetics, 01.01.2018.

Research output: Contribution to journalArticle

Kumar, Durgesh ; Jin, Tianli ; Al Risi, S. ; Sbiaa, Rachid ; Lew, W. S. ; Piramanayagam, S. N. / Domain Wall Motion Control for Racetrack Memory Applications. In: IEEE Transactions on Magnetics. 2018.
@article{1d05b96743c241efa91c109c73064f77,
title = "Domain Wall Motion Control for Racetrack Memory Applications",
abstract = "Increasing demand for large capacity data storage can only be fulfilled by hard disk drives (HDDs) and to some extent by solid-state drives (SSDs). However, HDDs are favorable in many applications, as they are approximately 5-10 times cheaper than SSDs. Attempts are being made to increase the capacity of HDDs by technologies such as heat-assisted magnetic recording and microwave assisted magnetic recording. However, increasing the capacity has been a slow process and there are limitations in achieving areal density above 10 Tbpsi. Thus, the introduction of new technologies is important for attaining high capacity. In this scenario, domain wall (DW) memory is a potential candidate, but there are still many unsolved issues. One of these is ensuring controlled and reliable motion of DWs along the nanowire. In this paper, we provide an overview of existing technologies and our attempts to control DW motion. Many methods of fabricating pinning centers have been proposed and demonstrated. These methods can mainly be categorized as 1) geometrical and 2) non-geometrical methods. In the first part, we review the geometrical approach to pin DWs. Later, we provide an overview of our approaches to create pinning centers using non-geometrical means. Non-geometrical approach provides more advantages as it provides a variety of choices to tailor the properties. In particular, this approach suits scalability.",
keywords = "Domain wall (DW) memory, DW pinning, geometrical pinning, Magnetic domains, Magnetic tunneling, Magnetosphere, Nanoscale devices, non-geometrical pinning, Perpendicular magnetic anisotropy, Wires",
author = "Durgesh Kumar and Tianli Jin and {Al Risi}, S. and Rachid Sbiaa and Lew, {W. S.} and Piramanayagam, {S. N.}",
year = "2018",
month = "1",
day = "1",
doi = "10.1109/TMAG.2018.2876622",
language = "English",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Domain Wall Motion Control for Racetrack Memory Applications

AU - Kumar, Durgesh

AU - Jin, Tianli

AU - Al Risi, S.

AU - Sbiaa, Rachid

AU - Lew, W. S.

AU - Piramanayagam, S. N.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Increasing demand for large capacity data storage can only be fulfilled by hard disk drives (HDDs) and to some extent by solid-state drives (SSDs). However, HDDs are favorable in many applications, as they are approximately 5-10 times cheaper than SSDs. Attempts are being made to increase the capacity of HDDs by technologies such as heat-assisted magnetic recording and microwave assisted magnetic recording. However, increasing the capacity has been a slow process and there are limitations in achieving areal density above 10 Tbpsi. Thus, the introduction of new technologies is important for attaining high capacity. In this scenario, domain wall (DW) memory is a potential candidate, but there are still many unsolved issues. One of these is ensuring controlled and reliable motion of DWs along the nanowire. In this paper, we provide an overview of existing technologies and our attempts to control DW motion. Many methods of fabricating pinning centers have been proposed and demonstrated. These methods can mainly be categorized as 1) geometrical and 2) non-geometrical methods. In the first part, we review the geometrical approach to pin DWs. Later, we provide an overview of our approaches to create pinning centers using non-geometrical means. Non-geometrical approach provides more advantages as it provides a variety of choices to tailor the properties. In particular, this approach suits scalability.

AB - Increasing demand for large capacity data storage can only be fulfilled by hard disk drives (HDDs) and to some extent by solid-state drives (SSDs). However, HDDs are favorable in many applications, as they are approximately 5-10 times cheaper than SSDs. Attempts are being made to increase the capacity of HDDs by technologies such as heat-assisted magnetic recording and microwave assisted magnetic recording. However, increasing the capacity has been a slow process and there are limitations in achieving areal density above 10 Tbpsi. Thus, the introduction of new technologies is important for attaining high capacity. In this scenario, domain wall (DW) memory is a potential candidate, but there are still many unsolved issues. One of these is ensuring controlled and reliable motion of DWs along the nanowire. In this paper, we provide an overview of existing technologies and our attempts to control DW motion. Many methods of fabricating pinning centers have been proposed and demonstrated. These methods can mainly be categorized as 1) geometrical and 2) non-geometrical methods. In the first part, we review the geometrical approach to pin DWs. Later, we provide an overview of our approaches to create pinning centers using non-geometrical means. Non-geometrical approach provides more advantages as it provides a variety of choices to tailor the properties. In particular, this approach suits scalability.

KW - Domain wall (DW) memory

KW - DW pinning

KW - geometrical pinning

KW - Magnetic domains

KW - Magnetic tunneling

KW - Magnetosphere

KW - Nanoscale devices

KW - non-geometrical pinning

KW - Perpendicular magnetic anisotropy

KW - Wires

UR - http://www.scopus.com/inward/record.url?scp=85056693547&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85056693547&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2018.2876622

DO - 10.1109/TMAG.2018.2876622

M3 - Article

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

ER -