TY - JOUR
T1 - Domain wall memory
T2 - Physics, materials, and devices
AU - Kumar, Durgesh
AU - Jin, Tianli
AU - Sbiaa, Rachid
AU - Kläui, Mathias
AU - Bedanta, Subhankar
AU - Fukami, Shunsuke
AU - Ravelosona, Dafine
AU - Yang, See Hun
AU - Liu, Xiaoxi
AU - Piramanayagam, S. N.
N1 - Funding Information:
SNP thanks the National Research Foundation of Singapore , Prime Minister’s Office for Competitive Research Programme (Spin–Orbit Coupling based IntelligencE TechnologY (SOCIETY), NRF-CRP21-2018-0003 ) grant. SNP also acknowledges the Nanyang Technological University, Singapore start-up grant (NTU-SUG), MOE Tier 2 grant MOE2019-T2-1-117 of the Ministry of Education (MOE) Singapore and National Research Foundation of Singapore-IIP Grant ( NRF2015-IIP-003-001 ) for the partial financial support. DK thanks the Nanyang Technological University, Singapore research scholarship for financial support. MK thanks the German Research Foundation (DFG #268565370 ) for support.
Publisher Copyright:
© 2022 Elsevier B.V.
PY - 2022/5/5
Y1 - 2022/5/5
N2 - Digital data, generated by corporate and individual users, is growing day by day due to a vast range of digital applications. Magnetic hard disk drives (HDDs) currently fulfill the demand for storage space, required by this data growth. Although flash memory devices are replacing HDDs in applications like mobile phones, laptops, and desktops, HDDs cover the majority of digital data stored in the cloud and servers. Since the capacity growth of HDDs is slowing down, it is essential to look for a potential alternative. One such alternative is domain wall (DW) memory, where magnetic domains in the form of two-dimensional or three-dimensional wires are used to store the information. DW memory (DWM) devices should satisfy the four basic operations, such as writing (nucleating domains or inserting DWs in memory element), storing (stabilizing DWs), shifting (moving DWs), and reading (reading magnetization direction). An external magnetic field or spin-transfer torque can be used to write the information. Spin–orbit torque or electric field may be used for shifting the DWs. The information can be read using tunneling magnetoresistance. The domains may be stored along the tracks using artificial pinning potentials. The absence of moving parts makes the DWM consume less power as compared to HDDs, and be more robust. The potential to stack many layers to store information in three dimensions makes them potentially a large storage capacity device. In addition to memory, DW devices also offer a route for making synaptic devices for neuromorphic computing. Despite these potential advantages of DWM, significant advances in research are needed before DWM could become commercially viable. One of the major challenges associated with DWM is DW dynamics. Many problems, such as controlled DW motion, the stability of domains, reducing the dimensions of the DW devices are still to be addressed. Artificial pinning sites fabricated through either geometrical or non-geometrical methods have been proposed for controlling DW motion. This review paper presents a survey of the investigations carried out so far and the future perspective of such devices.
AB - Digital data, generated by corporate and individual users, is growing day by day due to a vast range of digital applications. Magnetic hard disk drives (HDDs) currently fulfill the demand for storage space, required by this data growth. Although flash memory devices are replacing HDDs in applications like mobile phones, laptops, and desktops, HDDs cover the majority of digital data stored in the cloud and servers. Since the capacity growth of HDDs is slowing down, it is essential to look for a potential alternative. One such alternative is domain wall (DW) memory, where magnetic domains in the form of two-dimensional or three-dimensional wires are used to store the information. DW memory (DWM) devices should satisfy the four basic operations, such as writing (nucleating domains or inserting DWs in memory element), storing (stabilizing DWs), shifting (moving DWs), and reading (reading magnetization direction). An external magnetic field or spin-transfer torque can be used to write the information. Spin–orbit torque or electric field may be used for shifting the DWs. The information can be read using tunneling magnetoresistance. The domains may be stored along the tracks using artificial pinning potentials. The absence of moving parts makes the DWM consume less power as compared to HDDs, and be more robust. The potential to stack many layers to store information in three dimensions makes them potentially a large storage capacity device. In addition to memory, DW devices also offer a route for making synaptic devices for neuromorphic computing. Despite these potential advantages of DWM, significant advances in research are needed before DWM could become commercially viable. One of the major challenges associated with DWM is DW dynamics. Many problems, such as controlled DW motion, the stability of domains, reducing the dimensions of the DW devices are still to be addressed. Artificial pinning sites fabricated through either geometrical or non-geometrical methods have been proposed for controlling DW motion. This review paper presents a survey of the investigations carried out so far and the future perspective of such devices.
KW - Data storage
KW - Domain wall devices
KW - Domain wall physics
KW - Magnetic domain walls
KW - Neuromorphic computing
KW - Orbital Torque
KW - Racetrack memory
KW - Skyrmions
KW - Spin-Transfer Torque
KW - Spin–Orbit Torque
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U2 - 10.1016/j.physrep.2022.02.001
DO - 10.1016/j.physrep.2022.02.001
M3 - Review article
AN - SCOPUS:85126602155
SN - 0370-1573
VL - 958
SP - 1
EP - 35
JO - Physics Reports
JF - Physics Reports
ER -