Domain Wall Dynamics in Stepped Magnetic Nanowire with Perpendicular Magnetic Anisotropy

Suleiman Al Risi; Rachid Sbiaa; Mohammed Al Bahri

doi:10.1002/pssa.202000225

Domain Wall Dynamics in Stepped Magnetic Nanowire with Perpendicular Magnetic Anisotropy

Suleiman Al Risi, Rachid Sbiaa^*, Mohammed Al Bahri

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Micromagnetic simulation is carried out to investigate the current-driven domain wall (DW) in a nanowire with perpendicular magnetic anisotropy. A stepped nanowire is proposed to pin DW and achieve high information storage capacity based on multibit per cell scheme. The DW speed is found to increase for thicker and narrower nanowires. For depinning DW from the stepped region, the current density J_dep is investigated with emphasis on device geometry and material intrinsic properties. The J_dep can be analytically determined as a function of the nanoconstriction dimension and the thickness of the nanowire. Furthermore, J_dep is found to exponential dependent on the anisotropy energy and saturation magnetization, offering thus more flexibility in adjusting the writing current for memory applications.

Original language	English
Article number	2000225
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	217
Issue number	16
DOIs	https://doi.org/10.1002/pssa.202000225
Publication status	Published - Aug 1 2020
Externally published	Yes

Keywords

domain wall motion
magnetic nanowires
perpendicular magnetic anisotropy
spin transfer torque

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1002/pssa.202000225

Cite this

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title = "Domain Wall Dynamics in Stepped Magnetic Nanowire with Perpendicular Magnetic Anisotropy",

abstract = "Micromagnetic simulation is carried out to investigate the current-driven domain wall (DW) in a nanowire with perpendicular magnetic anisotropy. A stepped nanowire is proposed to pin DW and achieve high information storage capacity based on multibit per cell scheme. The DW speed is found to increase for thicker and narrower nanowires. For depinning DW from the stepped region, the current density Jdep is investigated with emphasis on device geometry and material intrinsic properties. The Jdep can be analytically determined as a function of the nanoconstriction dimension and the thickness of the nanowire. Furthermore, Jdep is found to exponential dependent on the anisotropy energy and saturation magnetization, offering thus more flexibility in adjusting the writing current for memory applications.",

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note = "Publisher Copyright: {\textcopyright} 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

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T1 - Domain Wall Dynamics in Stepped Magnetic Nanowire with Perpendicular Magnetic Anisotropy

AU - Al Risi, Suleiman

AU - Sbiaa, Rachid

AU - Al Bahri, Mohammed

PY - 2020/8/1

Y1 - 2020/8/1

N2 - Micromagnetic simulation is carried out to investigate the current-driven domain wall (DW) in a nanowire with perpendicular magnetic anisotropy. A stepped nanowire is proposed to pin DW and achieve high information storage capacity based on multibit per cell scheme. The DW speed is found to increase for thicker and narrower nanowires. For depinning DW from the stepped region, the current density Jdep is investigated with emphasis on device geometry and material intrinsic properties. The Jdep can be analytically determined as a function of the nanoconstriction dimension and the thickness of the nanowire. Furthermore, Jdep is found to exponential dependent on the anisotropy energy and saturation magnetization, offering thus more flexibility in adjusting the writing current for memory applications.

AB - Micromagnetic simulation is carried out to investigate the current-driven domain wall (DW) in a nanowire with perpendicular magnetic anisotropy. A stepped nanowire is proposed to pin DW and achieve high information storage capacity based on multibit per cell scheme. The DW speed is found to increase for thicker and narrower nanowires. For depinning DW from the stepped region, the current density Jdep is investigated with emphasis on device geometry and material intrinsic properties. The Jdep can be analytically determined as a function of the nanoconstriction dimension and the thickness of the nanowire. Furthermore, Jdep is found to exponential dependent on the anisotropy energy and saturation magnetization, offering thus more flexibility in adjusting the writing current for memory applications.

KW - domain wall motion

KW - magnetic nanowires

KW - perpendicular magnetic anisotropy

KW - spin transfer torque

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Domain Wall Dynamics in Stepped Magnetic Nanowire with Perpendicular Magnetic Anisotropy

Abstract

Keywords

ASJC Scopus subject areas

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