Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

Nazek El-Atab, Samar Alqatari, Feyza B. Oruc, Tewfic Souier, Matteo Chiesa, Ali K. Okyay, Ammar Nayfeh

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ∼3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively.

Original languageEnglish
Article number102119
JournalAIP Advances
Volume3
Issue number10
DOIs
Publication statusPublished - Oct 2013

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atomic layer epitaxy
zinc oxides
diodes
silicon
atomic force microscopy
electric potential
rectification
thin films
electrical faults
heterojunctions
alternating current
electric fields
air
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

El-Atab, N., Alqatari, S., Oruc, F. B., Souier, T., Chiesa, M., Okyay, A. K., & Nayfeh, A. (2013). Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon. AIP Advances, 3(10), [102119]. https://doi.org/10.1063/1.4826583

Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon. / El-Atab, Nazek; Alqatari, Samar; Oruc, Feyza B.; Souier, Tewfic; Chiesa, Matteo; Okyay, Ali K.; Nayfeh, Ammar.

In: AIP Advances, Vol. 3, No. 10, 102119, 10.2013.

Research output: Contribution to journalArticle

El-Atab, N, Alqatari, S, Oruc, FB, Souier, T, Chiesa, M, Okyay, AK & Nayfeh, A 2013, 'Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon', AIP Advances, vol. 3, no. 10, 102119. https://doi.org/10.1063/1.4826583
El-Atab, Nazek ; Alqatari, Samar ; Oruc, Feyza B. ; Souier, Tewfic ; Chiesa, Matteo ; Okyay, Ali K. ; Nayfeh, Ammar. / Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon. In: AIP Advances. 2013 ; Vol. 3, No. 10.
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