Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

Nazek El-Atab, Samar Alqatari, Feyza B. Oruc, Tewfic Souier, Matteo Chiesa, Ali K. Okyay, Ammar Nayfeh

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Abstract

A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ∼3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively.

Original languageEnglish
Article number102119
JournalAIP Advances
Volume3
Issue number10
DOIs
Publication statusPublished - Oct 2013

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    El-Atab, N., Alqatari, S., Oruc, F. B., Souier, T., Chiesa, M., Okyay, A. K., & Nayfeh, A. (2013). Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon. AIP Advances, 3(10), [102119]. https://doi.org/10.1063/1.4826583