Differentiation between C and Si related damage centres in 4H and 6H SiC by the use of 90-300 kV electron irradiation followed by low temperature photoluminescence microscopy

J. W. Steeds*, F. Carosella, G. A. Evans, M. M. Ismail, L. R. Danks, W. Voegeli

*Corresponding author for this work

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